SILICON SMALL SIGNAL N-CHANNEL JFET 2N4391 • High Speed Switching. • Low On Resistance. • Designed For High Reliability and Space Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VDS VGS VGD IG PD Drain – Source Voltage Gate – Source Voltage Gate – Drain Voltage Gate Current Total Power Dissipation at TA = 25°C Derate Above 25°C TJ Tstg Junction Temperature Range Storage Temperature Range 40V -40V -40V 50mA 300mW 2mW/°C -55 to +175°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient Max. Units 500 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document No. 10131 Issue 1 Page 1 of 3 SILICON SMALL SIGNAL N-CHANNEL JFET 2N4391 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions V(BR)GSS VDS = 0V IG = 1.0µA -40 VDS = 20V ID = 1.0nA -4 -10 IDSS Gate – Source Breakdown Voltage Gate – Source Cut-off Voltage Saturation Drain Current VDS = 20V VGS = 0V 50 150 mA IGSS Gate Reverse Current VDS = 0V VGS = -20V -100 pA TA = 150°C -200 nA ID(off) Drain Cut-off Current VGS = -12V 100 pA TA = 150°C 200 nA VDS(on) Drain – Source On Voltage Drain – Source On Resistance VGS = 0V ID = 12mA 0.4 V VGS = 0 ID = 1.0mA 30 Ω Max. Units VGS(off) (1) RDS(on) Min. Typ. Max. Units V VDS = 20V DYNAMIC CHARACTERISTICS Symbols Parameters Test Conditions Ciss Common – Source Input Capacitance VDS = 20V VGS = 0V 26 Crss Common – Source Reverse Transfer Capacitance f = 1.0MHz VDS = 0V VGS = -12V 5 RDS(on) Drain – Source On Resistance ID = 0A 30 tr Rise Time td(on) Turn-on Delay Time VDD = 10V VGSX = -12V 15 tf Fall Time VGS = 0V ID(on) = 12mA 15 td(off) Turn-off Delay Time (1) Min. Typ. f = 1.0MHz VGS = 0 f = 1.0KHz pF Ω 5 ns 20 Pulse Width ≤ 380us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document No. 10131 Issue 1 Page 2 of 3 SILICON SMALL SIGNAL N-CHANNEL JFET 2N4391 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 1 2 TO-18 (TO-206AA) METAL PACKAGE Underside View Pin 1 – Source Pin 2 – Drain Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Pin 3 - Gate Website: http://www.semelab-tt.com Document No. 10131 Issue 1 Page 3 of 3