N-CHANNEL POWER MOSFET IRF240 • Low RDS(on) MOSFET Transistor In A Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS VGS ID ID IDM PD Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current (1) Total Power Dissipation at 200V ±20V 18A 11A 72A 125W 1.0W/°C 12.5mJ 5V/ns -55 to +150°C -55 to +150°C Tc = 25°C Tc = 100°C Tc = 25°C Derate Above 25°C EAS dv/dt TJ Tstg Single Pulse Avalanche Energy Peak Diode Recovery (3) Junction Temperature Range Storage Temperature Range (2) THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 1.0 °C/W Max. Units INTERNAL PACKAGE INDUCTANCE Symbols Parameters Min. Typ. LD Internal Drain Inductance 5 LS Internal Source Inductance 13 nH Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) @VDD = 50V, L ≥ 2.1mH, Peak IL = 18A, Starting TJ = 25°C (3) @ ISD ≤ 18A, di/dt ≤ 160A/µs, VDD ≤ BVDSS, TJ ≤ 150°C, Suggested RG = 9.1Ω (4) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 3332 Issue 2 Page 1 of 3 N-CHANNEL POWER MOSET IRF240 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions BVDSS Drain-Source Breakdown Voltage VGS = 0 ID = 1.0mA Temperature Coefficent of Breakdown Voltage Reference to 25°C ID = 1.0mA VGS = 10V ID = 11A (4) VGS = 10V ID = 18A (4) VDS = VGS ID = 250µA ∆BVDSS ∆TJ RDS(on) Static Drain-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate-Source Leakage Reverse Gate-Source Leakage IGSS Min. Typ Max. 200 Units V 0.29 V/°C 0.18 Ω 0.21 2 (4) 4 VDS ≥ 15V I DS = 11A VGS = 0 VDS = 0.8BVDSS 25 TJ = 125°C 250 6.1 V S(Ʊ) VGS = 20V 100 VGS = -20V -100 µA nA DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 1300 Coss Output Capacitance VDS = 25V 400 Crss Reverse Transfer Capacitance f = 1.0MHz 130 Qg Total Gate Charge VGS = 10V 32 60 Qgs Gate-Source Charge ID = 18A 2.2 10.6 Qgd Gate-Drain Charge VDS = 0.5BVDSS 14 38 td(on) Turn-On Delay Time VDD = 100V tr Rise Time td(off) Turn-Off Delay Time tf Fall Time pF nC 20 152 ID = 18A ns 58 RG = 9.1Ω 67 SOURCE-DRAIN DIODE CHARACTERISTICS IS Continuous Source Current 18 ISM Pulse Source Current VSD Diode Forward Voltage trr Reverse Recovery Time IS = 18A TJ = 25°C Qrr Reverse Recovery Charge VDD ≤ 50V di/dt = 100A/µs (1) A 72 IS = 18A VGS = 0 TJ = 25°C (4) Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] (4) Website: http://www.semelab-tt.com 1.5 V 500 ns 5.3 µC Document Number 3332 Issue 2 Page 2 of 3 N-CHANNEL POWER MOSET IRF240 MECHANICAL DATA Dimensions in mm (inches) 3 9 .9 5 (1 .5 7 3 ) m a x . 3 0 .4 0 (1 .1 9 7 ) 3 0 .1 5 (1 .1 8 7 ) 4 .0 9 (0 .1 6 1 ) 3 .8 4 (0 .1 5 1 ) d ia . 2 p lc s . 1 1 .1 8 (0 .4 4 0 ) 1 0 .6 7 (0 .4 2 0 ) 2 1 2 6 .6 7 (1 .0 5 0 ) m a x . 1 7 .1 5 (0 .6 7 5 ) 1 6 .6 4 (0 .6 5 5 ) 7 .8 7 (0 .3 1 0 ) 6 .9 9 (0 .2 7 5 ) 1 2 .0 7 (0 .4 7 5 ) 1 1 .3 0 (0 .4 4 5 ) 1 .7 8 (0 .0 7 0 ) 1 .5 2 (0 .0 6 0 ) 2 0 .3 2 (0 .8 0 0 ) 1 8 .8 0 (0 .7 4 0 ) d ia . 1 .5 7 (0 .0 6 2 ) 1 .4 7 (0 .0 5 8 ) d ia . 2 p lc s . TO3 (TO-204AE) Pin 1 - Gate Pin 2 - Source Case - Drain Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 3332 Issue 2 Page 3 of 3