P-CHANNEL POWER MOSFET SML6609ASMD05 • Electrically Isolated and Hermetically Sealed Surface Mount Package Ultra Low On State Resistance Fast Switching Low Gate Charge Screening Options Available • • • • ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS VGS ID IDM PD Drain – Source Voltage Gate – Source Voltage Continuous Drain Current @ Tcase = 25°C TJ, Tstg Operating and Storage Temperature Range -30V ±20V -6.3A -40A 20W 0.45W/°C -55°C to +150°C Pulsed Drain Current1 Total Power Dissipation @ Tcase = 25°C Linear De-rating Factor @ Tcase ≥ 25°C THERMAL CHARACTERISTICS Symbol Parameters Max Units RθJC Thermal Resistance, Junction To Case 1.8 °C/W RθJPCB Thermal Resistance, Junction To PCB 6.25 °C/W Notes: 1) Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8678 Issue 2 Page 1 of 3 P-CHANNEL POWER MOSFET SML6609ASMD05 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Symbol Parameters Test Conditions BVDSS Drain-Source Breakdown Voltage VGS = 0 ID = -250µA Temperature Coefficient of Breakdown Voltage Reference to 25°C ID = -250µA VGS = -10V ID = -7A 0.04 Tj = 125°C 0.54 VGS = -7.5V ID = -5.5A 0.06 Gate Threshold Voltage VDS = VGS ID = -250µA Temperature Coefficient of Gate Threshold Voltage Reference to 25°C ID = -250µA gfs Forward Transconductance VDS = -10V I D = -7A IDSS Drain-Source Leakage Current VGS = 0 VDS = -24V IGSS ∆BVDSS ∆T j RDS(on) 1 VGS(th) ∆VGS (th) ∆T j 1 Static Drain-Source On-State Resistance Min Typ Max -30 V -0.022 -2.5 V/°C -4.5 Ω V -0.004 V/°C 14.5 S(Ʊ) -3.0 Forward Gate-Source Leakage VGS = -20V -100 IGSS Reverse Gate-Source Leakage VGS = 20V 100 ID(on) On-State Drain Current VGS = -10V VDS = -5V Units µA nA A -20 DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 1975 Coss Output Capacitance 315 Crss Reverse Transfer Capacitance VDS = -25V f = 1.0MHz Qg Total Gate Charge VGS = -10V 46 Qgs Gate-Source Charge ID = -7.2A 19 Qgd Gate-Drain Charge VDS = -15V 11 td(on) Turn-On Delay Time VDD = -15V 20 tr Rise Time 28 td(off) Turn-Off Delay Time tf Fall Time ID = -1.0A RG = 6Ω VGS = -10V pF 160 nC ns 39 27 SOURCE – DRAIN DIODE CHARACTERISTICS IS VSD Continuous Source Current 1 Diode Forward Voltage IS = -2.1A VGS = 0 Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com -2.1 A -1.2 V Document Number 8678 Issue 2 Page 2 of 3 P-CHANNEL POWER MOSFET SML6609ASMD05 MECHANICAL DATA Dimensions in mm (inches) 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 1 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 3.05 (0.120) 0.127 (0.005) 2 0.127 (0.005) 0.127 (0.005) 16 PLCS 0.50(0.020) 0.50 (0.020) max. 7.26 (0.286) SMD05 (TO-276AA) (Underside View) Pad 1 - Source Pad 2 – Drain Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Pad 3 - Gate Website: http://www.semelab-tt.com Document Number 8678 Issue 2 Page 3 of 3