N-CHANNEL POWER MOSFET IRF330 / 2N6760 • Power MOSFET Transistor In A Hermetic Metal TO-3 Package • High Input Impedance / RDS(on) < 1.0Ω • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS VGS ID ID IDM PD Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Continuous Drain Current (1) Pulsed Drain Current Total Power Dissipation at Tc = 25°C Tc = 100°C Tc = 25°C Derate Above 25°C EAS IAR dv/dt TJ Tstg TL (2) Single Pulse Avalanche Energy Avalanche Current (1) Peak Diode Recovery (3) Junction Temperature Range Storage Temperature Range Lead Temperature (1.6mm (0.063”) from case for 10sec) 400V ±20V 5.5A 3.5A 22A 75W 0.6W/°C 1.7mJ 5.5A 4V/ns -55 to +150°C -55 to +150°C 300°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. Units 1.67 °C/W INTERNAL PACKAGE INDUCTANCE Symbols Parameters Typ. Units LS + LD Total Inductance 6.1 nH Notes Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) @VDD = 50V, Peak IL = 5.5A, Starting TJ = 25°C (3) (4) @ ISD ≤ 5.5A, di/dt ≤ 90A/µs, VDD ≤ BVDSS, TJ ≤ 150°C, Suggested RG = 7.5Ω Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9142 Issue 1 Page 1 of 3 N-CHANNEL POWER MOSET IRF330 / 2N6760 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions BVDSS Drain-Source Breakdown Voltage VGS = 0 ID = 1.0mA Temperature Coefficent of Breakdown Voltage Reference to 25°C ID = 1.0mA VGS = 10V ID = 3.5A (4) VGS = 10V ID = 5.5A (4) VDS = VGS ID = 250µA ∆BVDSS ∆TJ RDS(on) Static Drain-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate-Source Leakage Reverse Gate-Source Leakage IGSS Min. Typ. Max. 400 Units V 0.46 V/°C 1.0 Ω 1.22 2 (4) 4 VDS ≥ 15V I DS = 3.5A VGS = 0 VDS = 0.8BVDSS 25 TJ = 125°C 250 2.9 V S(Ʊ) VGS = 20V 100 VGS = -20V -100 µA nA DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 620 Coss Output Capacitance VDS = 25V 200 Crss Reverse Transfer Capacitance f = 1.0MHz 75 Qg Total Gate Charge VGS = 10V 17 39 Qgs Gate-Source Charge ID = 5.5A 2 6 Qgd Gate-Drain Charge VDS = 0.5BVDSS 8 20 td(on) Turn-On Delay Time VDD = 200V tr Rise Time td(off) Turn-Off Delay Time tf Fall Time pF nC 30 40 ID = 5.5A ns 80 RG = 7.5Ω 35 SOURCE-DRAIN DIODE CHARACTERISTICS IS Continuous Source Current 5.5 ISM Pulse Source Current VSD Diode Forward Voltage trr Reverse Recovery Time IF = 5.5A TJ = 25°C Qrr Reverse Recovery Charge VDD ≤ 50V di/dt = 100A/µs (1) A 22 IS = 5.5A VGS = 0 TJ = 25°C (4) Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] (4) Website: http://www.semelab-tt.com 1.4 V 700 ns 6.2 µC Document Number 9142 Issue 1 Page 2 of 3 N-CHANNEL POWER MOSET IRF330 / 2N6760 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO-204AA) Pin 1 - Gate Pin 2 - Source Case - Drain Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9142 Issue 1 Page 3 of 3