N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002CSM • VDSS = 60V , ID = 115mA, RDS(ON) = 7.5Ω • • • • • Fast Switching Low Threshold Voltage Integral Source-Drain Body Diode Hermetic Ceramic Surface Mount Package (SOT-23 compatible) High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VDS VGS ID ID IDM PT Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current (1) Total Power Dissipation at TJ Tstg Operating Temperature Range Storage Temperature Range TC = 25°C TC = 100°C TA ≤ 25°C De-rate TC > 25°C 60V ±40V 115mA 75mA 800mA 350mW 2.8mW/°C -55 to +150°C -55 to +150°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient Max Units 357 °C/W Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8550 Issue 2 Page 1 of 3 N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002CSM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions BVDSS Drain-Source Breakdown Voltage VGS = 0 ID = 10µA 60 VGS(th) Gate Threshold Voltage ID = 250µA VDS ≥ VGS 1.0 ID = 1.0mA TA = -55°C IGSS Gate-Source Leakage Current VGS = ±20V VDS = 0V ±100 IDSS Zero Gate Voltage Drain Current VGS = 0 VDS = 60V 1.0 TA = 125°C 500 VGS = 5V ID = 50mA 1.5 VGS = 10V ID = 0.5A 3.75 VGS = 5V ID = 50mA 7.5 TA = 125°C 13.5 ID = 0.5A 7.5 TA = 125°C 13.5 VDS(on) RDS(on) (2) gfs VSD (2) (2) (2) Static Drain-Source On-State Voltage Static Drain-Source On-State Resistance VGS = 10V Min. Typ. Max. Units V 2.5 2.5 V nA µA V Ω Forward Transconductance VDS = 10V ID = 0.2A 80 Body Diode Forward Voltage VGS = 0 IS = 0.2A 0.7 mƱ 1.2 V DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 50 Coss Output Capacitance VDS = 25V 25 Crss Reverse Transfer Capacitance f = 1.0MHz 5 td(on) Turn-On Delay Time VDD = 30V 20 td(off) Turn-Off Delay Time ID = 0.2A RG = 50Ω Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com 20 pF ns Document Number 8550 Issue 2 Page 2 of 3 N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002CSM MECHANICAL DATA Dimensions in mm (inches) 0.31 rad. (0.012) 3 2 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 1 1.91 ± 0.10 (0.075 ± 0.004) 0.31 rad. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) A= 1.02 ± 0.10 (0.04 ± 0.004) A 1.40 (0.055) max. LCC1 (SOT-23 Ceramic) Underside View Pad 1 Gate Pad 2 Source Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Pad 3 Drain Website: http://www.semelab-tt.com Document Number 8550 Issue 2 Page 3 of 3