NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR BDX63 / BDX63A / BDX63B / BDX63C Hermetic TO3 Metal Package Ideally Suited for General Purpose Switching and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) BDX63 BDX63A BDX63B BDX63C VCEO VCBO Drain – Source Voltage 60V 80V 100V 120V Gate – Source Voltage 80V 100V 120V 140V VEBO IC Continuous Drain Current, Per Device 5V Collector Current 8A ICM IB Collector Current (peak) 12A Ptot TJ Tstg Base Current Total Power Dissipation @ TC = 25°C 150mA 90W Junction Temperature Range -55 to +200°C Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols RθJC Parameters Max. Units Thermal Resistance, Junction To Case 1.94 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone: +44 (0) 1455 556565 Fax: +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number: 10935 Issue: 1 Page: 1 of 3 NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR BDX63 / BDX63A / BDX63B / BDX63C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters ICBO Collector – Base Cut-Off Current ICEO Collector – Emitter Cut-Off Current IB = 0 IEBO Emitter – Base Cut-Off Current IC = 0 VEB = 5V DC Current Gain IC = 0.5A IC = 3A VCE = 3V VCE = 3V Base – Emitter Voltage IC = 8A IC = 3A VCE = 3V VCE = 3V VCE(sat) Collector – Emitter Saturation Voltage IC = 3A IB = 12mA VF Diode, Forward Voltage IF = 3A hFE (1) VBE (1) Test Conditions IE = 0 VCB = VCEOmax Min. Typ Max. Units 0.2 IE = 0 VCB = ½VCBOmax TA = 150°C 2 mA VCE = ½VCEOmax 0.5 5 1475 - 1000 5200 2.5 2 V 0.86 DYNAMIC CHARACTERISTICS COBO Output Capacitance fhfe(2) Cut-Off Frequency |hfe|(2) Small Signal Current Gain IE = 0 f = 1.0MHz IC = 3A IC = 3A f = 1.0MHz VCB = 10V VCE = 3V VCE = 3V 150 pF 100 kHz 100 - Notes (1) Pulse Width ≤ 380us, δ ≤ 2% (2) Not a Production Test, By Design Only Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone: +44 (0) 1455 556565 Fax: +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number: 10935 Issue: 1 Page: 2 of 3 NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR BDX63 / BDX63A / BDX63B / BDX63C C B Ω Ω E Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone: +44 (0) 1455 556565 Fax: +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number: 10935 Issue: 1 Page: 3 of 3