SEME-LAB 2N4913_09

SILICON EPITAXIAL
NPN TRANSISTOR
2N4913
•
Low Collector Saturation Voltage.
•
Hermetic TO3 Metal Package.
•
Designed For General Purpose, Switching
and Power Amplifier Applications
•
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
IB
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
40V
40V
5V
5A
1.0A
87.5W
0.5W/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
RθJC
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
Units
2
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8300
Issue 1
Page 1 of 3
SILICON EPITAXIAL
NPN TRANSISTOR
2N4913
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
V(BR)CEO
Collector-Emitter
Breakdown Voltage
IC = 10mA
ICEV
Collector Cut-Off Current
ICEO
Collector Cut-Off Current
VCE = 40V
IB = 0
1.0
ICBO
Collector Cut-Off Current
VCB = 40V
IE = 0
1.0
IEBO
Emitter Cut-Off Current
VEB = 5V
IC = 0
1.0
IC = 2.5A
VCE = 2V
25
IC = 5A
VCE = 2V
7
IC = 2.5A
VCE = 2V
1.4
IC = 2.5A
IB = 0.25A
1.0
IC = 5A
IB = 1.0A
1.5
IC = 500mA
VCE = 10V
(1)
hFE
Forward-current transfer
ratio
(1)
VBE(on)
(1)
(1)
VCE(sat)
Base-Emitter Voltage
Collector-Emitter Saturation
Voltage
VCE = 40V
Min.
Typ
Max.
40
Units
V
VBE = -1.5V
1.0
TC = 150°C
2
mA
100
V
DYNAMIC CHARACTERISTICS
hfe
Small-Signal Current Gain
fT
Transition Frequency
20
f = 1.0KHz
IC = 1.0A
VCE = 10V
4
MHz
f = 1.0MHz
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8300
Issue 1
Page 2 of 3
SILICON EPITAXIAL
NPN TRANSISTOR
2N4913
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
6.35 (0.25)
9.15 (0.36)
2
22.23
(0.875)
max.
1
1.52 (0.06)
3.43 (0.135)
0.97 (0.060)
1.10 (0.043)
16.64 (0.655)
17.15 (0.675)
29.9 (1.177)
30.4 (1.197)
38.61 (1.52)
39.12 (1.54)
10.67 (0.42)
11.18 (0.44)
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO3 (TO-204AA) METAL PACKAGE
Underside View
Pin 1 - Base
Pin 2 - Emitter
Case - Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8300
Issue 1
Page 3 of 3