SILICON EPITAXIAL NPN TRANSISTOR 2N4913 • Low Collector Saturation Voltage. • Hermetic TO3 Metal Package. • Designed For General Purpose, Switching and Power Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 40V 40V 5V 5A 1.0A 87.5W 0.5W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 2 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8300 Issue 1 Page 1 of 3 SILICON EPITAXIAL NPN TRANSISTOR 2N4913 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10mA ICEV Collector Cut-Off Current ICEO Collector Cut-Off Current VCE = 40V IB = 0 1.0 ICBO Collector Cut-Off Current VCB = 40V IE = 0 1.0 IEBO Emitter Cut-Off Current VEB = 5V IC = 0 1.0 IC = 2.5A VCE = 2V 25 IC = 5A VCE = 2V 7 IC = 2.5A VCE = 2V 1.4 IC = 2.5A IB = 0.25A 1.0 IC = 5A IB = 1.0A 1.5 IC = 500mA VCE = 10V (1) hFE Forward-current transfer ratio (1) VBE(on) (1) (1) VCE(sat) Base-Emitter Voltage Collector-Emitter Saturation Voltage VCE = 40V Min. Typ Max. 40 Units V VBE = -1.5V 1.0 TC = 150°C 2 mA 100 V DYNAMIC CHARACTERISTICS hfe Small-Signal Current Gain fT Transition Frequency 20 f = 1.0KHz IC = 1.0A VCE = 10V 4 MHz f = 1.0MHz Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8300 Issue 1 Page 2 of 3 SILICON EPITAXIAL NPN TRANSISTOR 2N4913 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 2 22.23 (0.875) max. 1 1.52 (0.06) 3.43 (0.135) 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO-204AA) METAL PACKAGE Underside View Pin 1 - Base Pin 2 - Emitter Case - Collector Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8300 Issue 1 Page 3 of 3