SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N5415CSM4 2N5416CSM4 • Silicon Planar PNP Transistor • Hermetic Ceramic Surface Mounted Package. • Hi-Rel Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current TA = 25°C Total Power Dissipation at Junction Temperature Range Storage Temperature Range 2N5415 2N5416 -200V -200V -4V -350V -300V -6V 1.0A 0.5A 1.0W 175°C -65 to +200°C THERMAL PROPERTIES (Each Device) Symbols Parameters RθJA Thermal Resistance, Junction To Ambient Max. Units 150 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9226 Issue 2 Page 1 of 3 SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N5415CSM4, 2N5416CSM4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols (1) V(BR)CEO V(BR)CER (1) (1) ICEO (1) ICBO (1) Parameters Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current Collector-Base Cut-off Current Test Conditions Min. IC = -10mA 2N5415 -200 IC = -10mA 2N5416 -300 2N5416 -350 RBE = 50Ω IC = -50mA Typ. Max. V IB = 0 VCE = -150V -50 VCB = -175V 2N5415 -50 VCB = -280V 2N5416 -50 VEB = -4V 2N5415 -20 VEB = -6V 2N5416 -20 IEBO Emitter Cut-off Current VCE(sat) Collector-Emitter Saturation Voltage IC = -50mA IB = -5mA -0.5 Base-Emitter Voltage IC = -50mA VCE = -10V -1.5 (1) VBE IC = -50mA hFE (1) DC Current Gain VCE = -10V IC = -50mA VCE = -10V 2N5415 Units 30 µA V 150 - 2N5416 30 120 DYNAMIC CHARACTERISTICS Symbols Parameters Test Conditions Min. fT Transition Frequency IC = -10mA VCE = -10V Cobo Output Capacitance VCB = -10V IE = 0 f =1.0MHz hfe Small Signal Current Gain IC = -5mA VCE = -10V f =1.0kHz f =5MHz Typ Max. 15 MHz 25 25 Units pF - Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Se melab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9226 Issue 2 Page 2 of 3 SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N5415CSM4, 2N5416CSM4 MECHANICAL DATA Dimensions in mm (inches) 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) 0.23 rad. (0.009) 3 4 1.02 ± 0.20 (0.04 ± 0.008) 2 1 1.27 ± 0.05 (0.05 ± 0.002) 0.64 ± 0.08 (0.025 ± 0.003) 3.81 ± 0.13 (0.15 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001) 0.23 min. (0.009) 2.03 ± 0.20 (0.08 ± 0.008) LCC3 (MO-041BA) Underside View PAD 1 – Collector PAD 3 – Emitter PAD 2 – N/C PAD 4 – Base Semelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Se melab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9226 Issue 2 Page 3 of 3