LED - CHIP ELC-870-27 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs N (cathode) up Outline (dimensions in microns) n-side electrode, gold alloy active layer 150 360 120 epitaxial n-AlGaAs epitaxial p-AlGaAs p-side electrode, gold alloy 360 ELC-07 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Forward voltage Test conditions IF = 20 mA Reverse voltage IR = 100 µA VR 5 Radiant power* IF = 20 mA Φe 3.5 4.5 Peak wavelength IF = 20 mA λp 860 875 Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 45 nm Switching time IF = 20 mA tr, tf 25 ns Parameter Symbol Min VF Typ Max Unit 1.4 1.7 V V mW 890 nm *Measured on bare chip on TO-18 header Labeling Type Lot N° Φe (min, typ), VF (typ, max) Quantity ELC-870-27 Packing Chips on adhesive film with wire-bond side on top rev.09/02 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str. 325 b, Hs. 201, Tel.: +49-30-6576 2543, Fax.: +49-30-6576 2545