LED - Chip ELC-630-29-10 Preliminary 10.04.2007 rev. 02/06 Radiation Type Technology Electrodes Red Point Source AlInGaP/GaAs N (cathode) up typ. dimensions (µm) 290 +3 Ø 28 - 2 cathode gold alloy, 1.5 µm R 85 115 170 230 - 10 + 20 typ. thickness 170 (±20) µm 115 PS-05 anode gold alloy, 0.5 µm + 20 350 - 10 Maximum Ratings Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit 7 mA Typ Max Unit 2.3 2.6 V IF Forward current (DC) Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Forward voltage IF = 5 mA VF Reverse voltage IR = 10 µA VR 5 Radiant power* IF = 5 mA Φe 55 70 µW Luminous intensity* IF = 5 mA IV 2.0 3.0 mcd Peak wavelength IF = 5 mA λP 625 630 Spectral bandwidth at 50% IF = 5 mA ∆λ0.5 25 nm Switching time IF = 5 mA tr, tf 40/30 ns V 635 nm *Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Type Lot N° IV(typ) [mcd] VF(typ) [V] Quantity ELC-630-29-10 Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1