RU20P3B

RU20P3B
P-Channel Advanced Power MOSFET
MOSFET
Features
Pin Description
• -20V/-3A,
RDS (ON) =80mΩ (Typ.) @ VGS=-4.5V
RDS (ON) =110mΩ (Typ.) @ VGS=-2.5V
• Low RDS (ON)
• Super High Dense Cell Design
• Reliable and Rugged
SOT-23
• Lead Free and Green Available
Applications
• Power Management
• Load Switch
Absolute Maximum Ratings
Symbol
P-Channel MOSFET
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
-20
VGSS
Gate-Source Voltage
±12
Maximum Junction Temperature
150
°C
-55 to 150
°C
TA=25°C
-1.2
A
TA=25°C
-12
TA=25°C
-3
TA=70°C
-2.3
TA=25°C
1
TA=70°C
0.64
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
V
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
ID
Continuous Drain Current(VGS=-4.5V)
PD
RθJA
②
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2012
①
A
A
125
W
°C/W
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RU20P3B
Electrical Characteristics
Symbol
(TA=25°C Unless Otherwise Noted)
Parameter
Test Condition
RU20P3B
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
③
VGS=0V, IDS=-250µA
V
-20
VDS=-20V, VGS=0V
-1
TJ=85°C
Gate Threshold Voltage
VDS=VGS, IDS=-250µA
Gate Leakage Current
VGS=±12V, VDS=0V
-30
-0.5
-
µA
-1
V
±100
nA
VGS=-4.5V, IDS=-3A
80
100
mΩ
VGS=-2.5V, IDS=-2A
110
150
mΩ
-1.2
V
Drain-Source On-state Resistance
Diode Characteristics
VSD
③
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD=-1A, VGS=0V
ISD=-3A, dlSD/dt=100A/µs
13
ns
6
nC
2
Ω
④
Dynamic Characteristics
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
VGS=0V,
VDS=-10V,
Frequency=1.0MHz
480
120
pF
40
8
VDD=-10V, RL=3Ω,
IDS=-3A, VGEN=-4.5V,
RG=6Ω
Turn-off Fall Time
13
ns
25
12
④
Gate Charge Characteristics
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
7
VDS=-16V, VGS=-4.5V,
IDS=-3A
1.5
nC
2.5
Pulse width limited by safe operating area.
②When mounted on 1 inch square copper board, t ≤10sec. The value in any given application depends on
the user's specific board design.
③Pulse test ; Pulse width≤300µs, duty cycle≤2%.
④Guaranteed by design, not subject to production testing.
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2012
2
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RU20P3B
Typical Characteristics
Drain Current
Ptot - Power (W)
-ID - Drain Current (A)
Power Dissipation
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
-ID - Drain Current (A)
Normalized Effective Transient
Thermal Transient Impedance
-VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2012
Square Wave Pulse Duration (sec)
3
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RU20P3B
Typical Characteristics
Drain-Source On Resistance
-ID - Drain Current (A)
RDS(ON) - On Resistance (mΩ)
Output Characteristics
-ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
RDS(ON) - On - Resistance (m)
Normalized Threshold Voltage
-VDS - Drain-Source Voltage (V)
-VGS - Gate-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2012
Tj - Junction Temperature (°C)
4
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RU20P3B
Typical Characteristics
Source-Drain Diode Forward
-IS - Source Current (A)
Normalized On Resistance
Drain-Source On Resistance
Tj - Junction Temperature (°C)
-VSD - Source-Drain Voltage (V)
Gate Charge
C - Capacitance (pF)
-VGS - Gate-Source Voltage (V)
Capacitance
-VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2012
QG - Gate Charge (nC)
5
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RU20P3B
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2012
6
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RU20P3B
Ordering and Marking Information
②
Device
Marking
①
Package
Packaging
Quantity
Reel Size
Tape width
RU20P3B
8XYWW
SOT-23
Tape&Reel
3000
7’’
8mm
RU20P3B-G
8XYWW
SOT-23
Tape&Reel
3000
7’’
8mm
① The following characters could be different and means:
X
=Assembly site code
Y
=Year
WW =Work Week
② Device end with -G means Green Product
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2012
7
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RU20P3B
Package Information
SOT-23
SYMBOL
MM
INCH
MM
SYMBOL
INCH
MIN
MAX
MIN
MAX
A
0.900
1.150
0.035
0.045
E1
MIN
MAX
MIN
MAX
2.250
2.550
0.089
A1
0.000
0.100
0.000
0.004
e
0.100
A2
0.900
1.050
0.035
0.041
e1
b
0.300
0.500
0.012
0.020
L
c
0.080
0.150
0.003
0.006
L1
0.300
0.500
0.012
0.020
D
2.800
3.000
0.110
0.118
θ
0°
8°
0°
8°
E
1.200
1.400
0.047
0.055
0.950 TYP.
1.800
2.000
0.550 REF.
0.037 TYP.
0.071
0.079
0.022 REF.
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2012
8
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RU20P3B
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2012
9
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