RU40E80L

RU40E80L
N-Channel Advanced Power MOSFET
Features
Pin Description
• 40V/80A,
RDS (ON) =4.5mΩ(Typ.)@VGS=10V
RDS (ON) =5.5mΩ(Typ.)@VGS=4.5V
• Low RDS (ON)
• Super High Dense Cell Design
• ESD protected
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
D
G
S
TO252
D
Applications
• Switching Applications
G
S
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
40
VGSS
Gate-Source Voltage
±16
Maximum Junction Temperature
175
°C
-55 to 175
°C
TC=25°C
80
A
TC=25°C
320
A
TC=25°C
80
TC=100°C
62
TC=25°C
96
TC=100°C
48
TJ
TSTG
IS
V
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
②
Continuous Drain Current(VGS=10V)
IDP
ID
PD
Maximum Power Dissipation
A
W
RθJC
Thermal Resistance-Junction to Case
1.55
°C/W
RθJA
Thermal Resistance-Junction to Ambient
100
°C/W
256
mJ
Drain-Source Avalanche Ratings
EAS
③
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
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RU40E80L
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
RU40E80L
Symbol
Parameter
Test Condition
Unit
Min.
Typ.
Max.
Static Characteristics
BVDSS
IDSS
Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
Zero Gate Voltage Drain Current
40
V
VDS=40V, VGS=0V
1
TJ=125°C
VGS(th)
IGSS
④
RDS(ON)
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±16V, VDS=0V
Drain-Source On-state Resistance
µA
30
1.3
2.5
V
10
µA
VGS=10V, IDS=80A
4.5
7
mΩ
VGS=4.5V, IDS=64A
5.5
11
mΩ
1.2
V
Diode Characteristics
VSD
④
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
ISD=80A, VGS=0V
ISD=40A, dlSD/dt=100A/µs
Reverse Recovery Charge
Dynamic Characteristics
25
ns
22
µC
1.2
Ω
⑤
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V,
VDS=20V,
Frequency=1.0MHz
Crss
Reverse Transfer Capacitance
85
td(ON)
Turn-on Delay Time
15
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
Turn-off Fall Time
Gate Charge Characteristics
Qg
295
55
pF
ns
42
13
⑤
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
VDD=20V,IDS=40A,
VGEN=10V,RG=4.7Ω
1620
42
VDS=32V, VGS=10V,
IDS=40A
11
nC
15
①Pulse width limited by safe operating area.
②Calculated continuous current based on maximum allowable junction temperature. The Package
limitation current is 60A.
③Limited by TJmax, IAS =32A, VDD =32V, RG =50Ω , Starting TJ =25°C.
④Pulse test;Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
2
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RU40E80L
Ordering and Marking Information
Device
Marking
Package
RU40E80L
RU40E80L
TO252
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
Packaging Quantity Reel Size Tape width
Tape&Reel
3
2500
13''
16mm
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RU40E80L
Typical Characteristics
Power Dissipation
120
Drain Current
90
80
ID - Drain Current (A)
PD - Power (W)
100
70
60
80
50
60
40
Limited By Package
30
40
20
20
10
VGS=10V
0
0
0
25
50
75
100
125
150
25
175
50
RDS(ON) - On - Resistance (mΩ)
RDS(ON) limited
ID - Drain Current (A)
100
10µs
100µs
1ms
10ms
10
DC
TC=25°C
1
0.1
100
125
150
175
Drain Current
Safe Operation Area
1000
75
TJ - Junction Temperature (°C)
TJ - Junction Temperature (°C)
10
Ids=80A
9
8
7
6
5
4
3
2
1
0
1
10
100
0
1000
1
2
3
4
5
6
7
8
9
10
VGS - Gate-Source Voltage (V)
VDS - Drain-Source Voltage (V)
ZthJC - Thermal Response (°C/W)
Thermal Transient Impedance
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
1
0.1
Single Pulse
0.01
RθJC=1.55°C/W
0.001
1E-05
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
4
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RU40E80L
Typical Characteristics
Output Characteristics
ID - Drain Current (A)
90
4V
80
70
60
3.5V
50
40
3V
30
20
2V
10
0
1
2
Drain-Source On Resistance
10
VGS=9,10
V
3
9
RDS(ON) - On Resistance (mΩ)
100
4
8
7
6
4.5V
5
4
10V
3
2
1
0
5
0
20
40
VDS - Drain-Source Voltage (V)
100
IS - Source Current (A)
Normalized On Resistance
2.0
1.5
1.0
0.5
TJ=25°C
Rds(on)=4.5mΩ
TJ=150°C
10
1
TJ=25°C
0.1
0.01
0.0
0.2
-25
0
25
50
75
100
125
150
0.4
Capacitance
VGS - Gate-Source Voltage (V)
C - Capacitance (pF)
Frequency=1.0MHz
2400
Ciss
1800
1500
1200
900
600
Coss
300
Crss
0
1
0.8
1
1.2
1.4
Gate Charge
3000
2100
0.6
VSD - Source-Drain Voltage (V)
TJ - Junction Temperature (°C)
2700
100
Source-Drain Diode Forward
VGS=10V
ID=80A
-50
80
ID - Drain Current (A)
Drain-Source On Resistance
2.5
60
10
100
10
VDS=32V
IDS=40A
9
8
7
6
5
4
3
2
1
0
0
VDS - Drain-Source Voltage (V)
10
20
30
40
50
QG - Gate Charge (nC)
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
5
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RU40E80L
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
6
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RU40E80L
Package Information
TO252
E
b3
L3
C
D1
θ1
H
D
A1
E1
θ1
θ
L
L4
L1
θ1
e
L2
b
A
θ2
MM
SYMBOL
A
A1
b
b3
c
D
D1
E
E1
e
H
L
L1
L2
L3
L4
θ
θ1
θ2
MIN
2.200
0.000
0.720
5.230
0.470
6.000
6.500
4.700
9.900
1.400
0.900
0.600
0°
5°
5°
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
INCH
NOM
2.290
0.785
5.345
0.525
6.100
5.30 REF
6.600
4.810
2.28 REF
10.100
1.550
2.743 REF
0.510 BSC
1.075
0.800
7°
7°
7
MAX
2.380
0.100
0.850
5.460
0.580
6.200
MIN
0.087
0.000
0.028
0.206
0.019
0.236
6.700
4.920
0.256
0.185
10.300
1.700
0.390
0.055
1.250
1.000
8°
9°
9°
0.035
0.024
0°
5°
5°
NOM
0.090
0.031
0.210
0.021
0.240
0.20 REF
0.260
0.189
0.09 REF
0.398
0.061
0.108 REF
0.020 BSC
0.042
0.031
7°
7°
MAX
0.094
0.004
0.033
0.215
0.023
0.244
0.264
0.194
0.406
0.067
0.049
0.039
8°
9°
9°
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RU40E80L
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
8
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