RU40120S N-Channel Advanced Power MOSFET Features Pin Description • 40V/120A, D RDS (ON) =3.5mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D Applications • DC-DC Converters G S N-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 40 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 120 A TC=25°C 480 A TC=25°C 120 TC=100°C 103 TC=25°C 150 TC=100°C 75 TJ TSTG IS V Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ② Continuous Drain Current(VGS=10V) IDP ID PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient A W 1 °C/W 62.5 °C/W 400 mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2013 1 www.ruichips.com RU40120S Electrical Characteristics (TC=25°C Unless Otherwise Noted) RU40120S Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current 40 V VDS=40V, VGS=0V 1 TJ=125°C VGS(th) IGSS ④ RDS(ON) Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance VGS=10V, IDS=60A µA 30 2 3.5 4 V ±100 nA 4.5 mΩ 1.2 V Diode Characteristics VSD ④ trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=60A, VGS=0V ISD=60A, dlSD/dt=100A/µs Reverse Recovery Charge Dynamic Characteristics 33 ns 30 nC 1.8 Ω ⑤ RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=20V, Frequency=1.0MHz Crss Reverse Transfer Capacitance 345 td(ON) Turn-on Delay Time 36 tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Gate Charge Characteristics Qg 680 205 pF ns 85 45 ⑤ Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: VDD=20V, IDS=60A, VGEN=10V,RG=4.7Ω 3700 90 VDS=32V, VGS=10V, IDS=60A 32 nC 37 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. The package limitation current is 75A. ③Limited by TJmax, IAS =40A, VDD = 32V, RG = 50Ω , Starting TJ = 25°C. ④Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2013 2 www.ruichips.com RU40120S Ordering and Marking Information Device Marking Package RU40120S RU40120S TO263 Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2013 Packaging Quantity Reel Size Tape width Tube 3 50 - - www.ruichips.com RU40120S Typical Characteristics Drain Current Power Dissipation 160 135 120 ID - Drain Current (A) PD - Power (W) 140 120 105 100 90 75 80 60 60 45 40 30 20 VGS=10V 15 0 0 0 25 50 75 100 125 150 25 175 50 10µs 100µs 1ms 10ms 1 DC 0.1 0.01 TC=25°C 0.01 0.1 RDS(ON) - On - Resistance (mΩ) RDS(ON) limited ID - Drain Current (A) 10 100 125 150 175 Drain Current Safe Operation Area 100 75 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) 10 9 Ids=60A 8 7 6 5 4 3 2 1 0 1 10 0 100 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 0.1 0.01 Single Pulse RθJC=1°C/W 0.001 1E-05 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2013 4 www.ruichips.com RU40120S Typical Characteristics Output Characteristics Drain-Source On Resistance 10 8,9,10V 200 150 6V 100 50 5V 0 0 1 2 3 9 RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) 250 4 8 7 6 5 10V 4 3 2 1 0 5 0 20 40 VDS - Drain-Source Voltage (V) 100 Source-Drain Diode Forward 100 VGS=10V IDS=60A 2.0 IS - Source Current (A) Normalized On Resistance 80 ID - Drain Current (A) Drain-Source On Resistance 2.5 60 1.5 1.0 0.5 TJ=25°C Rds(on)=3.5mΩ TJ=175°C 10 TJ=25°C 1 0.1 0.0 0.2 -50 -25 0 25 50 75 100 125 150 175 0.4 Capacitance VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz 4000 Ciss 3000 2500 2000 1500 1000 Coss 500 Crss 0 1 1 1.2 1.4 Gate Charge 5000 3500 0.8 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 4500 0.6 10 100 10 VDS=32V IDS=60A 9 8 7 6 5 4 3 2 1 0 0 VDS - Drain-Source Voltage (V) 20 40 60 80 QG - Gate Charge (nC) Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2013 5 www.ruichips.com RU40120S Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2013 6 www.ruichips.com RU40120S Package Information TO263 A E L3 c1 L2 θ1 A1 H D DEP A2 L1 θ1 b C L b1 θ2 e θ θ2 SYMBOL A A1 A2 b b1 c c1 D E e H MM MIN 4.40 0.00 2.59 0.77 1.23 0.34 1.22 8.60 10.00 14.70 NOM 4.55 0.10 2.69 * * * * 8.70 10.13 2.54BSC 15.10 INCH MAX 4.70 0.25 2.79 0.90 1.36 0.47 1.32 8.80 10.26 15.50 Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2013 MIN 0.173 0.000 0.102 0.030 0.048 0.013 0.048 0.339 0.394 NOM 0.179 0.005 0.106 MAX 0.185 0.010 0.110 0.035 0.054 0.019 0.052 0.346 0.404 0.343 0.399 0.100BSC 0.579 0.594 0.610 7 SYMBOL L L3 L1 L4 L2 θ θ1 θ2 DEP Φp1 L4 MM MIN 2.00 1.17 * NOM 2.30 1.29 * 0.25 BSC 2.50 REF 0° * 5° 7° 1° 3° 0.05 0.10 1.40 1.50 INCH MAX 2.60 1.40 1.70 MIN 0.079 0.046 * 8° 9° 5° 0.20 1.60 0° 5° 1° 0.002 0.055 NOM 0.091 0.051 * 0.01 BSC 0.098 REF * 7° 3° 0.004 0.059 MAX 0.102 0.055 0.067 8° 9° 5° 0.008 0.063 www.ruichips.com RU40120S Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2013 8 www.ruichips.com