RU30160S N-Channel Advanced Power MOSFET Features Pin Description • 30V/160A, RDS (ON) =2.3mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) D G S TO263 D Applications • DC-DC Converters G S N-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 160 A TC=25°C 640 A TC=25°C 160 TC=100°C 113 TC=25°C 188 TC=100°C 94 TJ TSTG IS V Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ② Continuous Drain Current(VGS=10V) IDP ID PD Maximum Power Dissipation A W RθJC Thermal Resistance-Junction to Case 0.8 °C/W RθJA Thermal Resistance-Junction to Ambient 62.5 °C/W 400 mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 1 www.ruichips.com RU30160S Electrical Characteristics (TC=25°C Unless Otherwise Noted) RU30160S Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current 30 V VDS=30V, VGS=0V 1 TJ=125°C VGS(th) IGSS ④ RDS(ON) Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance VGS=10V, IDS=75A µA 30 2 3 2.3 4 V ±100 nA 3.5 mΩ 1.2 V Diode Characteristics VSD ④ trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=75A, VGS=0V ISD=75A, dlSD/dt=100A/µs Reverse Recovery Charge Dynamic Characteristics 45 ns 90 nC 1.8 Ω ⑤ RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=15V, Frequency=1.0MHz Crss Reverse Transfer Capacitance 350 td(ON) Turn-on Delay Time 30 tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf pF 105 83 ns ⑤ Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 660 45 Turn-off Fall Time Gate Charge Characteristics Qg VDD=15V, RL=0.2Ω, IDS=75A, VGEN=10V, RG=4.7Ω 3970 96 VDS=24V, VGS=10V, IDS=75A 18 nC 28 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. The package limitation current is 75A. ③Limited by TJmax, IAS =40A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C. ④Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 2 www.ruichips.com RU30160S Ordering and Marking Information Device Marking Package RU30160S RU30160S TO263 Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 Packaging Quantity Reel Size Tape width Tube 3 50 - - www.ruichips.com RU30160S Typical Characteristics Power Dissipation 200 180 160 ID - Drain Current (A) 160 PD - Power (W) Drain Current 180 140 140 120 120 100 100 80 80 60 60 40 40 20 20 VGS=10V 0 0 0 25 50 75 100 125 150 25 175 50 10 10µs 100µs 1ms 10ms DC 1 0.1 TC=25°C 0.01 0.1 RDS(ON) - On - Resistance (mΩ) RDS(ON) limited ID - Drain Current (A) 100 100 125 150 175 Drain Current Safe Operation Area 1000 75 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) 5 IDS=75A 4 3 2 1 0 1 10 0 100 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 0.1 0.01 Single Pulse RθJC=0.8°C/W 0.001 1E-05 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 4 www.ruichips.com RU30160S Typical Characteristics Output Characteristics Drain-Source On Resistance 10 VGS=8,9,10V 150 6V 100 5V 50 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) 200 8 6 4 10V 2 0 0 20 VDS - Drain-Source Voltage (V) Drain-Source On Resistance VGS=10V IDS=75A 1.5 1.0 0.5 TJ=25°C Rds(on)=2.3mΩ 10.0 TJ=25°C 1.0 0.1 0.2 0 25 50 75 100 125 150 175 0.4 Capacitance VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz 4000 3500 Ciss 3000 2500 2000 1500 1000 Coss Crss 0 1 0.8 1 1.2 1.4 Gate Charge 5000 4500 0.6 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 500 100 TJ=175°C 0.0 -25 80 100.0 2.0 -50 60 Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance 2.5 40 ID - Drain Current (A) 10 100 10 VDS=24V IDS=75A 9 8 7 6 5 4 3 2 1 0 0 VDS - Drain-Source Voltage (V) 50 100 150 QG - Gate Charge (nC) Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 5 www.ruichips.com RU30160S Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 6 www.ruichips.com RU30160S Package Information TO263 A E L3 c1 L2 θ1 A1 H D DEP A2 L1 θ1 b C L b1 θ2 e θ θ2 SYMBOL A A1 A2 b b1 c c1 D E e H MM MIN 4.40 0.00 2.59 0.77 1.23 0.34 1.22 8.60 10.00 14.70 NOM 4.55 0.10 2.69 * * * * 8.70 10.13 2.54BSC 15.10 INCH MAX 4.70 0.25 2.79 0.90 1.36 0.47 1.32 8.80 10.26 15.50 Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 MIN 0.173 0.000 0.102 0.030 0.048 0.013 0.048 0.339 0.394 NOM 0.179 0.005 0.106 MAX 0.185 0.010 0.110 0.035 0.054 0.019 0.052 0.346 0.404 0.343 0.399 0.100BSC 0.579 0.594 0.610 7 SYMBOL L L3 L1 L4 L2 θ θ1 θ2 DEP Φp1 L4 MM MIN 2.00 1.17 * NOM 2.30 1.29 * 0.25 BSC 2.50 REF 0° * 5° 7° 1° 3° 0.05 0.10 1.40 1.50 INCH MAX 2.60 1.40 1.70 MIN 0.079 0.046 * 8° 9° 5° 0.20 1.60 0° 5° 1° 0.002 0.055 NOM 0.091 0.051 * 0.01 BSC 0.098 REF * 7° 3° 0.004 0.059 MAX 0.102 0.055 0.067 8° 9° 5° 0.008 0.063 www.ruichips.com RU30160S Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 8 www.ruichips.com