RU1HP60R P-Channel Advanced Power MOSFET Features Pin Description • -100V/-60A, RDS (ON) =18mΩ(Typ.)@VGS=-10V • Low On-Resistance • Super High Dense Cell Design • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Devices Available (RoHS Compliant) G D S TO220 D Applications •Inverters G S P-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage -100 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C -60 A TC=25°C -240 A TC=25°C -60 TC=100°C -42 TC=25°C 188 TC=100°C 94 TJ TSTG IS V Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ② Continuous Drain Current(VGS=-10V) IDP ID PD Maximum Power Dissipation A W RθJC Thermal Resistance-Junction to Case 0.8 °C/W RθJA Thermal Resistance-Junction to Ambient 62.5 °C/W 400 mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 1 www.ruichips.com RU1HP60R Electrical Characteristics (TC=25°C Unless Otherwise Noted) RU1HP60R Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA Zero Gate Voltage Drain Current -100 V VDS=-100V, VGS=0V -1 TJ=125°C VGS(th) IGSS ④ RDS(ON) Gate Threshold Voltage VDS=VGS, IDS=-250µA Gate Leakage Current VGS=±25V, VDS=0V Drain-Source On-state Resistance VGS=-10V, IDS=-60A µA -30 -2 -4 V ±100 nA 25 mΩ -1.5 V 18 Diode Characteristics VSD ④ trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=-30A, VGS=0V ISD=-60A, dlSD/dt=100A/µs Reverse Recovery Charge Dynamic Characteristics 175 ns 620 nC 2 Ω ⑤ RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=-50V, Frequency=1.0MHz Crss Reverse Transfer Capacitance 380 td(ON) Turn-on Delay Time 27 tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Gate Charge Characteristics Qg pF 615 83 ns 145 40 ⑤ Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: VDD=-50V,IDS=-60A, VGEN=-10V,RG=6Ω 4200 164 VDS=-80V, VGS=-10V, IDS=-60A nC 34 50 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③Limited by TJmax, IAS =-40A, VDD =-60V, RG = 50Ω, Starting TJ = 25°C. ④Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 2 www.ruichips.com ℃ RU1HP60R Ordering and Marking Information Device Marking Package RU1HP60R RU1HP60R TO220 Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 Packaging Quantity Reel Size Tape width Tube 3 50 - - www.ruichips.com ℃ RU1HP60R Typical Characteristics Power Dissipation 200 180 60 -ID - Drain Current (A) 160 PD - Power (W) Drain Current 70 50 140 120 40 100 30 80 60 20 40 10 20 VGS=-10V 0 0 0 25 50 75 100 125 150 25 175 50 0.1 TC=25°C 0.01 RDS(ON) - On - Resistance (mΩ) 1 0.1 150 175 150 10µs 100µs 1ms 10ms DC 0.01 125 Ids=-60A 125 RDS(ON) limited -ID - Drain Current (A) 10 100 Drain Current Safe Operation Area 100 75 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) 100 75 50 25 0 1 10 0 100 1 2 3 4 5 6 7 8 9 10 -VGS - Gate-Source Voltage (V) -VDS - Drain-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance 10 Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 0.1 Single Pulse 0.01 RθJC=0.8°C/W 0.001 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 4 www.ruichips.com ℃ RU1HP60R Typical Characteristics Output Characteristics Drain-Source On Resistance 100 -10V RDS(ON) - On Resistance (mΩ) -ID - Drain Current (A) 100 -6V -8V 80 60 -5V 40 20 -3V 0 0 1 2 3 4 80 60 40 -10V 20 0 5 0 30 -VDS - Drain-Source Voltage (V) 120 Source-Drain Diode Forward 100 VGS=-10V ID=-60A 2.0 -IS - Source Current (A) Normalized On Resistance 90 -ID - Drain Current (A) Drain-Source On Resistance 2.5 60 1.5 1.0 0.5 TJ=25°C Rds(on)=18mΩ TJ=175°C 10 TJ=25°C 1 0.1 0.0 0.3 -50 -25 0 25 50 75 100 125 150 0.6 Capacitance -VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz 4500 Ciss 3000 Coss Crss 1 1.5 1.8 Gate Charge 6000 0 1.2 -VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 1500 0.9 10 100 -VDS - Drain-Source Voltage (V) 10 VDS=-80V IDS=-60A 9 8 7 6 5 4 3 2 1 0 0 50 100 150 200 QG - Gate Charge (nC) Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 5 www.ruichips.com ℃ RU1HP60R Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 6 www.ruichips.com ℃ RU1HP60R Package Information TO220 E A E1 A1 p Q H1 L2 θ1 P1 D DEP D1 θ2 θ1 L1 b2 L b C A2 e e1 E2 SYMBOL A A1 A2 b b2 c D D1 DEP E E1 E2 MM MIN 4.40 1.20 2.23 0.75 1.17 0.40 15.40 8.96 0.05 9.66 * 9.80 NOM 4.55 1.30 2.38 0.80 1.28 0.50 15.60 9.21 0.13 9.97 8.70 10.00 INCH MAX 4.70 1.40 2.53 0.85 1.39 0.60 15.80 9.46 0.20 10.28 * 10.20 Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 MIN 0.173 0.047 0.088 0.030 0.046 0.016 0.606 0.353 0.002 0.380 * 0.386 NOM 0.179 0.051 0.094 0.031 0.050 0.020 0.614 0.363 0.005 0.393 0.343 0.394 MAX 0.185 0.055 0.100 0.033 0.055 0.024 0.622 0.372 0.008 0.405 * 0.402 7 SYMBOL Φp1 e e1 H1 L L1 L2 Φp Q θ1 θ2 MM MIN 1.40 6.40 12.70 * 3.50 2.73 5° 1° NOM 1.50 2.54 BSC 5.08 BSC 6.50 13.18 * 2.50 REF 3.60 2.80 7° 3° INCH MAX 1.60 MIN 0.055 6.60 13.65 3.95 0.252 0.500 * 3.70 2.87 9° 5° 0.138 0.107 5° 1° NOM 0.059 0.10 BSC 0.20 BSC 0.256 0.519 * 0.098 REF 0.142 0.110 7° 3° MAX 0.063 0.260 0.537 0.156 0.146 0.113 9° 5° www.ruichips.com ℃ RU1HP60R Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 8 www.ruichips.com