RU30120S

RU30120S
N-Channel Advanced Power MOSFET
Features
Pin Description
• 30V/120A,
RDS (ON) =2.5mΩ(Typ.)@VGS=10V
RDS (ON) =3.3mΩ(Typ.)@VGS=4.5V
D
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% Avalanche Tested
• Lead Free and Green Devices Available (RoHS Compliant)
G
S
TO263
D
Applications
• DC-DC Converters
G
S
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
30
VGSS
Gate-Source Voltage
±20
Maximum Junction Temperature
175
°C
-55 to 175
°C
TC=25°C
120
A
TC=25°C
480
A
TC=25°C
120
TC=100°C
100
TC=25°C
150
TC=100°C
75
TJ
TSTG
IS
V
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
②
Continuous Drain Current(VGS=10V)
IDP
ID
PD
Maximum Power Dissipation
RθJC
Thermal Resistance-Junction to Case
RθJA
Thermal Resistance-Junction to Ambient
A
W
1
°C/W
62.5
°C/W
306
mJ
Drain-Source Avalanche Ratings
EAS
③
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
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RU30120S
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
RU30120S
Symbol
Parameter
Test Condition
Unit
Min.
Typ.
Max.
Static Characteristics
BVDSS
IDSS
Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
Zero Gate Voltage Drain Current
30
V
VDS=30V, VGS=0V
1
TJ=125°C
VGS(th)
IGSS
④
RDS(ON)
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±20V, VDS=0V
Drain-Source On-state Resistance
µA
30
1
2
3
V
±100
nA
VGS=10V, IDS=60A
2.5
4
mΩ
VGS=4.5V, IDS=48A
3.3
6
mΩ
1.2
V
Diode Characteristics
VSD
④
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
ISD=60A, VGS=0V
ISD=60A, dlSD/dt=100A/µs
Reverse Recovery Charge
Dynamic Characteristics
45
ns
90
nC
1.8
Ω
⑤
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V,
VDS=15V,
Frequency=1.0MHz
Crss
Reverse Transfer Capacitance
265
td(ON)
Turn-on Delay Time
25
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
Turn-off Fall Time
Gate Charge Characteristics
Qg
480
106
pF
ns
64
36
⑤
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
VDD=15V, IDS=60A,
VGEN=10V, RG=4.7Ω
3170
65
VDS=24V, VGS=10V,
IDS=60A
15
nC
20
①Pulse width limited by safe operating area.
②Calculated continuous current based on maximum allowable junction temperature. The package
limitation current is 75A.
③Limited by TJmax, IAS =35A, VDD = 24V, RG = 50Ω , Starting TJ = 25°C.
④Pulse test;Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
2
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RU30120S
Ordering and Marking Information
Device
Marking
Package
RU30120S
RU30120S
TO263
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
Packaging Quantity Reel Size Tape width
Tube
3
50
-
-
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RU30120S
Typical Characteristics
Power Dissipation
160
140
120
ID - Drain Current (A)
PD - Power (W)
Drain Current
140
120
100
100
80
80
60
60
40
40
20
20
VGS=10V
0
0
0
25
50
75
100
125
150
25
175
50
10µs
100µs
1ms
10ms
DC
1
0.1
0.01
TC=25°C
0.01
0.1
RDS(ON) - On - Resistance (mΩ)
RDS(ON) limited
ID - Drain Current (A)
10
100
125
150
175
Drain Current
Safe Operation Area
100
75
TJ - Junction Temperature (°C)
TJ - Junction Temperature (°C)
10
Ids=40A
8
6
4
2
0
1
10
0
100
1
2
3
4
5
6
7
8
9
10
VGS - Gate-Source Voltage (V)
VDS - Drain-Source Voltage (V)
ZthJC - Thermal Response (°C/W)
Thermal Transient Impedance
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
1
0.1
0.01
Single Pulse
RθJC=1°C/W
0.001
1E-05
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
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RU30120S
Typical Characteristics
Output Characteristics
300
250
8V
RDS(ON) - On Resistance (mΩ)
10V
ID - Drain Current (A)
Drain-Source On Resistance
10
6V
200
150
5V
100
50
3V
0
0
1
2
3
4
8
6
4
4.5V
2
0
5
0
20
40
VDS - Drain-Source Voltage (V)
80
100
Source-Drain Diode Forward
100
VGS=10V
IDS=60A
2.0
IS - Source Current (A)
Normalized On Resistance
60
ID - Drain Current (A)
Drain-Source On Resistance
2.5
10V
1.5
1.0
0.5
TJ=25°C
Rds(on)=2.5mΩ
TJ=175°C
10
TJ=25°C
1
0.1
0.0
0.2
-50
-25
0
25
50
75
100
125
150
175
0.4
Capacitance
VGS - Gate-Source Voltage (V)
C - Capacitance (pF)
Frequency=1.0MHz
4000
3500
3000
Ciss
2000
1500
1000
Coss
500
Crss
0
1
1
1.2
1.4
Gate Charge
5000
2500
0.8
VSD - Source-Drain Voltage (V)
TJ - Junction Temperature (°C)
4500
0.6
10
100
10
VDS=24V
IDS=60A
9
8
7
6
5
4
3
2
1
0
0
VDS - Drain-Source Voltage (V)
20
40
60
80
QG - Gate Charge (nC)
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
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RU30120S
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
6
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RU30120S
Package Information
TO263
A
E
L3
c1
L2
θ1
A1
H
D
DEP
A2
L1
θ1
b
C
L
b1
θ2
e
θ
θ2
SYMBOL
A
A1
A2
b
b1
c
c1
D
E
e
H
MM
MIN
4.40
0.00
2.59
0.77
1.23
0.34
1.22
8.60
10.00
14.70
NOM
4.55
0.10
2.69
*
*
*
*
8.70
10.13
2.54BSC
15.10
INCH
MAX
4.70
0.25
2.79
0.90
1.36
0.47
1.32
8.80
10.26
15.50
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
MIN
0.173
0.000
0.102
0.030
0.048
0.013
0.048
0.339
0.394
NOM
0.179
0.005
0.106
MAX
0.185
0.010
0.110
0.035
0.054
0.019
0.052
0.346
0.404
0.343
0.399
0.100BSC
0.579 0.594 0.610
7
SYMBOL
L
L3
L1
L4
L2
θ
θ1
θ2
DEP
Φp1
L4
MM
MIN
2.00
1.17
*
NOM
2.30
1.29
*
0.25 BSC
2.50 REF
0°
*
5°
7°
1°
3°
0.05 0.10
1.40 1.50
INCH
MAX
2.60
1.40
1.70
MIN
0.079
0.046
*
8°
9°
5°
0.20
1.60
0°
5°
1°
0.002
0.055
NOM
0.091
0.051
*
0.01 BSC
0.098 REF
*
7°
3°
0.004
0.059
MAX
0.102
0.055
0.067
8°
9°
5°
0.008
0.063
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RU30120S
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
8
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