Low Capacitance Protection Device RSB12Z Applications ESD Protection Dimensions(Unit : mm) Land size figure(Unit : mm) 1.2±0.1 0.13±0.05 0.32±0.05 (3) 0.45 0.4 0.5 1.2±0.1 0.8±0.1 Features 1)Ultra small mold type.(VMD3) 2)Low capacitance 3)Bi direction 1.15 0.45 0.4 0∼0.1 0.8 (1) (2) VMD3 0.22±0.05 0.22±0.05 Construction Silicon epitaxial planer 0.5±0.05 0.4 0.4 Structure ROHM : VMD3 dot(year week factory) Taping specifications(Unit : mm) 0.3±0.1 2.0±0.04 φ1.55±0.05 φ0.5±0.05 Absolute maximum ratings (Ta=25℃) Parameter Symbol Power dissipation Junction temperature Storage temperature Electical characteristics(Ta=25℃) Parameter Symbol VZ Zener voltage Reverse current Capacitance between terminals www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. Limits Min. Typ. Max. Unit IR 9.6 - - 14.4 0.10 V μA Ct - 1 - pF 1/3 8.0±0.1 5.5±0.2 0.6±0.05 0 Unit mW ℃ ℃ 150 150 -55 to +150 P Tj Tstg 2.0±0.05 (4.0±0.1) 1.3±0.05 0 0~0.1 1.35±0.05 0 3.5±0.05 1.75±0.07 4.0±0.07 Conditions IZ=5mA VR=9V f=1MHz,VR=0V 2010.08 - Rev.A RSB12Z Data Sheet Electrical characteristics curve 10000 Ta=150℃ 10 Ta=125℃ f=1MHz Ta=25℃ Ta=75℃ 1 Ta=125℃ Ta=-25℃ Ta=150℃ 0.1 0.01 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 REVERSE CURRENT:IR (nA) ZENER CURRENT:Iz(mA) 10 100 Ta=75℃ 10 Ta=25℃ 1 0.1 Ta=-25℃ 0.01 1 0.001 0.0001 0.001 11 12 13 14 15 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 1 2 3 5 6 7 8 9 0 13.5 AVE:13.572V 13.4 8 7 6 5 4 3 2 AVE:0.3089nA TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 10 1 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 10 6 7 8 9 Ta=25℃ f=1MHz VR=0V n=10pcs 1.3 1.2 1.1 1 0.9 AVE:0.996pF 0.8 0.7 Ct DISRESION MAP IR DISRESION MAP 10000 5 0.5 Vz DISRESION MAP 100 4 0.6 0 13.3 3 1.4 CAPACITANCE BETWEENTERMINALS:Ct(pF) 13.6 2 1.5 Ta=25℃ VR=9V n=30pcs 9 REVERSE CURRENT:IR(nA) 13.7 1 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 10 Ta=25℃ IZ=5mA n=30pcs 1 DYNAMIC IMPEDANCE:Zz(Ω) 4 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 13.8 ZENER VOLTAGE:Vz(V) 0.1 0 16 Mounted on epoxy board IM=1mA IF=10mA 1ms 1000 time Rth(j-a) 300us 100 Rth(j-c) 10 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS 2/3 2010.08 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. 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