PIN diode RN242CS zDimensions (Unit : mm) zLead size figure (Unit : mm) 0.55 0.45 0.5 0.45 zApplications High frequency switching zFeatures 1) Ultra small mold type. (VMN2) 2) Low high frequency resistance and lowcapacitance VMN2 zStructure zConstruction Silicon epitaxial planer zTaping dimensions (Unit : mm) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage(DC) VR Forward current IF Junction temperature Tj Storage temperature Tstg zElectrical characteristics (Ta=25°C) Parameter Symbol Forward voltage VF Reverse current IR Capacitance between terminals Ct High frequency resistance Rf www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. Limits Unit V mA 30 100 150 -55 to +150 Min. - Typ. - - °C °C Max. 1 Unit V - 0.1 µA - 0.35 3 pF - 1.5 Ω 1/2 Ω Conditions IF=10mA VR=30V VR=1V , f=1MHz IF=3mA,f=100MHz IF=10mA,f=100MHz 2009.12 - Rev.B RN242CS Data Sheet zElectrical characteristic curves Ta=150°C 1000 100 Ta=125°C 10 f=1MHz REVERSE CURRENT:IR(nA) Ta=75°C 1 Ta=25°C Ta=-25°C Ta=75°C 10 1 Ta=25°C 0.1 Ta=-25°C 0.01 0.001 0.1 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS 5 10 15 20 25 REVERSE VOLTAGE : V R(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz FORWARD OPERATING RESISTANCE:rf(Ω) 0 f=10MHz f=100MHz 1 1 2 3 4 5 6 7 8 REVERSE VOLTAGE : V R(V) VR-Ct CHARACTERISTICS 9 10 860 Ta=25°C VR=0V 10 0.1 30 1 100 1 0.01 0 900 1000 1100 FORWARD VOLTAGE:V F(mV) FORWARD CURRENT:I F(mA) Ta=125°C 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 Ta=150°C Ta=25°C IF=10mA n=30pcs 850 840 830 820 AVE:831.2mV 1 FORWARD CURRENT:IF(mA) rf-IF CHARACTERISTICS 1 10 10 100 1000 FREQUENCY(MHz) Ct-f CHARACTERISTICS VF DISPERSION MAP 2 0.5 Ta=25°C VR=30V n=30pcs 0.4 0.3 0.2 AVE:0.06169nA 0.1 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0.5 Ta=25°C f=1MHz VR=1V n=10pcs 0.4 0.3 0.2 Ct DISPERSION MAP FORWARD OPERATING RESISTANCE:rf(Ω) 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 1.5 1.4 1.3 AVE:1.595Ω FORWARD CURRENT:IF(mA) rf DISPERSION MAP 5 ELECTROSTATIC DDISCHARGE TEST ESD(KV) Ta=25°C f=100MHz IF=10mA n=10pcs 1.4 1.6 1 0 1.5 1.7 1.1 AVE:0.256pF IR DISPERSION MAP 1.8 1.2 0.1 0 Ta=25°C f=100MHz IF=3mA n=10pcs 1.9 FORWARD OPERATING RESISTANCE:rf(Ω) 0.1 REVERSE CURRENT:IR(nA) 810 0.1 0.1 4 AVE:2.47kV 3 2 AVE:0.63kV 1 AVE:0.975Ω 0.5 0 FORWARD CURRENT:IF(mA) rf DISPERSION MAP www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 2/2 2009.12 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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