Switching Diode DAN217W zApplications Rectifying small power zDimensions(Unit : mm) zLand size figure(Unit : mm) 1.0 0.5 1.3 0.7 0.5 0.7 0.7 zFeatures Small mold type.(EMD3) 0.6 0.6 EMD3 zStructure zConstruction Silicon epitaxial zTaping dimensions (Unit : mm) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) Reverse voltage (DC) VR Forward current (Single) IFM Average rectified forward current Io Surge current (t=1us) Isurge Power dissipation Pd Junction temperature Tj Storage temperature Tstg zElectrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current IR Capacitance between terminals Ct Reverse recovery time trr www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. Limits 80 80 300 100 4 150 150 -55 to +150 Min. - Typ. - 1/2 Unit V V mA mA A mW °C °C Max. 1.2 0.1 3.5 4 Unit V µA pF ns Conditions IF=100mA VR=70V VR=6V , f=1MHz VR=6V , IF=5mA , RL=50Ω 2009.12 - Rev.A DAN217W Data Sheet zElectrical characteristics curves Ta=125° Ta=150°C 10 100000 Ta=125° Ta=150°C Ta=-25° 1 0.1 Ta=75° 1000 Ta=25° 100 10 Ta=-25° 1 0.1 0.1 200 400 600 800 1000 1200 1400 0 20 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 40 60 80 100 0 120 Ta=25°C VF=100mA n=30pcs REVERSE CURRENT:IR(nA) 890 880 AVE:888.3 870 160 140 120 100 80 60 AVE:20.90 40 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 AVE:0.595 Ct DISPERSION MAP 10 RESERVE RECOVERY TIME:trr(ns) 2 1cyc Ifsm 8.3ms 10 5 AVE:3.9 0 0.8 IR DISPERSION MAP 15 Ta=25°C VR=6V IF=10mA RL=100Ω n=10pcs 1.8 1.6 1.4 1.2 AVE:1.489 1 Ifsm 8.3ms 8.3ms 1cyc 5 0 1 IFSM DISPERSION MAP 5 0 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 9 8 ELECTROSTATIC DISCHARGE TEST ESD(KV) TRANSIENT THAERMAL IMPEDANODE:Rth（°C/W） PEAK SURGE FORWARD CURRENT:IFSM(A) Rth(j-a) t 100 10 1000 Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP 10 20 Ta=25° C f=1MHz VR=0.5V 0.9 20 VF DISPERSION MAP 20 15 1 Ta=25°C VR=80V n=30pcs 180 900 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 200 920 910 5 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0 FORWARD VOLTAGE:VF(mV) 1 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 Ta=25° CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75° 0.01 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MH 10000 100 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 1000 7 100 Rth(j-c) 6 5 Mounted on epoxy board 10 IM=1m IF=10m 1 0.001 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 2/2 AVE:1.60 AVE:6.48 1 300us 100 3 2 time 1ms 4 100 1000 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 2009.12 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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