Data Sheet Schottky Barrier Diode RB521S-30 Dimensions (Unit : mm) Applications General rectification Land size figure (Unit : mm) 0.8 0.12±0.05 1.6±0.1 1.2±0.05 Features 1)Ultra small mold type.（EMD2） 2)Low VF 3)High reliability 1.7 0.6 0.8±0.05 EMD2 Construction Silicon epitaxial planar Structure 0.3±0.05 0.6±0.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) Taping specifications(Unit : mm) 0.2±0.05 φ1.5±0.05 2.0±0.05 φ1.55±0.05 0.95±0.06 0.90±0.05 空ポケット Empty pocket 0 Absolute maximum ratings(Ta=25°C) Parameter Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Limits Symbol VR Io IFSM Tj Tstg 2.0±0.05 4.0±0.1 0 0.2 0.76±0.05 0.75±0.05 Unit V mA A °C °C 30 200 1 125 -40 to +125 Conditions Symbol VF Min. Typ. Max. Unit - - 0.50 V IF=200mA IR - - 30 μA VR=10V 1/3 1.25 0.06 1.26±0.05 0 3.5±0.05 0.6 1.25 0.06 1.3±0.06 0 0 2.40±0.05 2.45±0.1 φ0.5 8.0±0.15 1.75±0.1 4.0±0.1 2011.03 - Rev.F Data Sheet RB521S-30 100 100000 1000 10 Ta=75℃ 1 Ta=-25℃ 0.1 Ta=25℃ 0.01 10000 100 Ta=25℃ 10 10 Ta=-25℃ 1 0.1 0.01 0.001 100 200 300 400 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 500 10 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1 30 0 440 430 420 410 AVE:421.0mV 45 REVERSE CURRENT:VR(uA) Ta=25℃ IF=200mA n=10pcs 20 Ta=25℃ VR=10V n=30pcs 40 35 30 25 20 15 AVE:4.775uA 10 5 18 17 16 15 14 13 AVE:14.33pF 12 11 0 10 VF DISPERSION MAP IR DISPERSION MAP 20 Ct DISPERSION MAP 10 15 8.3ms 10 5 AVE:5.60A 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 8.3ms 1cyc 5 0 0 1 10 Ifsm 5 1 1000 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISPERSION MAP t 0 100 0.2 0.5 Rth(j-c) 100 Mounted on epoxy board IM=1mA 1ms IF=20mA FORWARD POWER DISSIPATION:Pf(W) Rth(j-a) 0.4 0.15 REVERSE POWER DISSIPATIONPR (w) PEAK SURGE FORWARD CURRENT:IFSM(A) 20 Ta=25℃ f=1MHz VR=0V n=10pcs 19 400 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 50 450 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0 FORWARD VOLTAGE:VF(mV) Ta=75℃ 1000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ 100 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) Ta=125℃ D=1/2 DC Sin(θ＝180) 0.1 0.05 time 0.3 DC 0.2 D=1/2 Sin(θ＝180) 0.1 300us 10 0.001 0.1 10 TIME:(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1000 0 0 0 0.1 0.2 0.3 0.4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pｆ CHARACTERISTICS 2/3 0.5 0 10 20 REVERSE VOLTAGE：VR(V) VR-PR CHARACTERISTICS 30 2011.03 - Rev.F Data Sheet RB521S-30 0A 0V 0.4 DC t T 0.3 VR D=t/T VR=15V Tj=125℃ D=1/2 0.2 0.1 0.5 Io Sin(θ＝180) 0 AVERAGE RECTIFIED FORWARD CURRENT Io(A) AVERAGE RECTIFIDE FORWARD CURRENT Io(A) 0.5 Io 0A 0V 0.4 t DC T 0.3 VR D=t/T VR=15V Tj=125℃ D=1/2 0.2 0.1 Sin(θ＝180) 0 0 25 50 75 100 AMBIENT TEMPERATURE：Ta(℃) Derating Curveﾞ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 125 0 25 50 75 100 125 CASE TEMPARATURE：Tc(℃) Derating Curve 3/3 2011.03 - Rev.F Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A