Data Sheet Schottky Barrier Diode RB400VA-50 Dimensions (Unit : mm) Applications General rectification Land size figure (Unit : mm) 1.1 0.17±0.1 0.05 3) High reliability. 2.5±0.2 1.9±0.1 Features 1) Small mold type. (TUMD2) 2) Low VF, Low IR. 0.8 0.5 2.0 1.3±0.05 TUMD2 Construction Silicon epitaxial planer Structure 0.8±0.05 0.6±0.2 ROHM : TUMD2 0.1 dot (year week factory) + day Taping specifications (Unit : mm) 2.75 8.0±0.2 3.5±0.05 4.0±0.1 1.43±0.05 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz / 1cyc) Junction temperature Storage temperature Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Symbol VRM VR Io IFSM Tj Tstg Symbol VF 1 Min. IR1 IR2 φ1.0±0.2 0 Limits Unit 50 40 0.5 3 125 40 to 125 V V A A °C °C 2.8±0.05 0.25±0.05 1.75±0.1 φ1.55±0.1 0 2.0±0.05 4.0±0.1 0.9±0.08 Typ. Max. - - 0.55 V IF=500mA - - 30 μA VR=10V - - 50 μA VR=30V Ct1 - 125 - pF Ct2 - 20 - pF VR=0V , f=1MHz VR=10V , f=1MHz 1/3 Unit Conditions 2011.04 - Rev.B Data Sheet RB400VA-50 10000 Ta=125℃ Ta=25℃ 10 Ta=-25℃ 1 100 10 Ta=25℃ Ta=-25℃ 0.1 200 400 600 10 1 0 5 10 15 20 25 30 35 40 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 10 510 500 490 480 AVE:495.8mV 470 8 6 5 4 AVE:0.510uA 3 2 7 6 5 4 AVE:1.562uA 3 2 1 1 0 0 IR DISPERSION MAP 30 170 160 150 140 AVE:117.5pF 120 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 180 23 22 21 20 19 18 17 110 16 100 15 20 5 AVE:9.3ns 0 AVE:5.30A 10 Ifsm 8 8.3ms 8.3ms 1cyc 6 4 2 1 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10 IFSM DISRESION MAP 0 trr DISPERSION MAP 8.3ms 20 0 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 AVE:20.66pF 1cyc Ifsm Ct DISPERSION MAP Ct DISPERSION MAP Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ta=25℃ f=1MHz VR=10V n=10pcs 24 PEAK SURGE FORWARD CURRENT:IFSM(A) 25 Ta=25℃ f=1MHz VR=0V n=10pcs 15 8 IR DISPERSION MAP 190 30 Ta=25℃ VR=35V n=30pcs 9 7 VF DISPERSION MAP 200 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 10 Ta=25℃ VR=10V n=30pcs 9 REVERSE CURRENT:IR(uA) Ta=25℃ IF=0.5A n=30pcs REVERSE CURRENT:IR(uA) 520 FORWARD VOLTAGE:VF(mV) 100 1 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75℃ PEAK SURGE FORWARD CURRENT:IFSM(A) 0 REVERSE RECOVERY TIME:trr(ns) f=1MHz 0.01 0.1 130 1000 Ta=125℃ 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75℃ 100 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 1000 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 2/3 100 Ifsm 8 t 6 4 2 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 2011.04 - Rev.B Data Sheet RB400VA-50 1ms IF=0.2A Rth(j-a) time 300us 100 Rth(j-c) 10 0.001 D=1/2 0.5 DC Sin(θ＝180) 0.1 1 10 100 0 1000 0.015 0.01 D=1/2 Sin(θ＝180) DC 0.005 0 0 0.01 0.2 0.4 0.6 0.8 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS 1 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 2 2 0A 0V 1.5 D=1/2 1 DC 0A 0V Io t T VR D=t/T VR=20V Tj=125℃ 0.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) IM=10mA 0.02 1 Mounted on epoxy board FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 1.5 D=1/2 1 Io t T DC VR D=t/T VR=20V Tj=125℃ 0.5 Sin(θ＝180) Sin(θ＝180) 0 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 125 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 3/3 125 2011.04 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A