R6030KNZ1 Nch 600V 30A Power MOSFET Datasheet l Outline VDSS 600V RDS(on)(Max.) 0.130Ω ID ±30A PD 305W TO-247 l Inner circuit l Features 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant l Packaging specifications Packing l Application Type Switching Tube Reel size (mm) - Tape width (mm) - Basic ordering unit (pcs) 450 Taping code C9 Marking R6030KNZ1 l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) VDSS 600 V ID*1 ±30 A Pulsed drain current IDP*2 ±90 A ±20 V ±30 V Gate - Source voltage static VGSS AC(f＞1Hz) Avalanche current, single pulse IAS 5.2 A Avalanche energy, single pulse Power dissipation (Tc = 25°C) EAS*3 636 mJ PD 305 W Tj 150 ℃ Tstg -55 to +150 ℃ Junction temperature Operating junction and storage temperature range www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/12 20150911 - Rev.001 R6030KNZ1 l Thermal resistance Datasheet Values Parameter Symbol Unit Min. Typ. Max. RthJC*4 - - 0.41 ℃/W Thermal resistance, junction - ambient RthJA - - 30 ℃/W Soldering temperature, wavesoldering for 10s Tsold - - 265 ℃ Thermal resistance, junction - case l Electrical characteristics (Ta = 25°C) Values Parameter Drain - Source breakdown voltage Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance Gate resistance Symbol Conditions Typ. Max. 600 - - VDS = 600V, VGS = 0V Tj = 25°C - - 100 Tj = 125°C - - 1000 IGSS VGS = ±20V, VDS = 0V - - ±100 nA VGS(th) VDS = 10V, ID = 1mA 3 - 5 V VGS = 10V, ID = 14.5A Tj = 25°C - 0.115 0.130 Tj = 125°C - 0.24 - f = 1MHz, open drain - 2.1 - V(BR)DSS IDSS RDS(on)*5 RG VGS = 0V, ID = 1mA www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. Unit Min. 2/12 V μA Ω Ω 20150911 - Rev.001 R6030KNZ1 Datasheet l Electrical characteristics (Ta = 25°C) Parameter Symbol Values Conditions Unit Min. Typ. Max. 10 20 - Forward Transfer Admittance |Yfs| *5 Input capacitance Ciss VGS = 0V - 2350 - Output capacitance Coss VDS = 25V - 2000 - Reverse transfer capacitance Crss f = 1MHz - 140 - VDD ⋍ 300V, VGS = 10V - 36 - tr*5 ID = 15A - 75 - td(off)*5 RL ⋍ 20Ω - 90 - tf*5 RG = 10Ω - 45 - Turn - on delay time Rise time Turn - off delay time Fall time td(on)*5 VDS = 10V, ID = 15A S pF ns l Gate charge characteristics (Ta = 25°C) Parameter Symbol Values Conditions Unit Min. Typ. Max. Total gate charge Qg*5 VDD ⋍ 300V - 56 - Gate - Source charge Qgs*5 ID = 30A - 18 - Gate - Drain charge Qgd*5 VGS = 10V - 23 - Gate plateau voltage V(plateau) VDD ⋍ 300V, ID = 30A - 6.3 - nC V *1 Limited only by maximum channel temperature allowed. *2 Pw ≤ 10μs, Duty cycle ≤ 1% *3 L≒50mH, VDD=50V, RG=25Ω, STARTING Tj=25℃ *4 TC=25℃ *5 Pulsed www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 3/12 20150911 - Rev.001 R6030KNZ1 Datasheet l Body diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter Symbol Continuous forward current Values Conditions IS*1 Unit Min. Typ. Max. - - 30 A - - 90 A - - 1.5 V - 517 - ns - 9.6 - μC - 37 - A TC = 25℃ Pulse forward current ISP*2 Forward voltage VSD*5 Reverse recovery time trr Reverse recovery charge Qrr Peak reverse recovery current Irrm VGS = 0V, IS = 30A IS = 30A di/dt = 100A/μs l Typical transient thermal characteristics Symbol Value Rth1 0.190 Rth2 0.429 Rth3 0.250 Unit K/W Symbol Value Cth1 0.0143 Cth2 0.322 Cth3 14.7 Unit Ws/K www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 4/12 20150911 - Rev.001 R6030KNZ1 Datasheet l Electrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Fig.3 Avalanche Energy Derating Curve vs. Junction Temperature www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 5/12 20150911 - Rev.001 R6030KNZ1 Datasheet l Electrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 6/12 20150911 - Rev.001 R6030KNZ1 Datasheet l Electrical characteristic curves Fig.6 Breakdown Voltage vs. Junction Temperature Fig.7 Typical Transfer Characteristics Fig.8 Gate Threshold Voltage vs. Junction Temperature Fig.9 Forward Transfer Admittance vs. Drain Current www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 7/12 20150911 - Rev.001 R6030KNZ1 Datasheet l Electrical characteristic curves Fig.10 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.11 Static Drain - Source On - State Resistance vs. Junction Temperature Fig.12 Static Drain - Source On - State Resistance vs. Drain Current(l) www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 8/12 20150911 - Rev.001 R6030KNZ1 Datasheet l Electrical characteristic curves Fig.13 Typical Capacitance vs. Drain - Source Voltage Fig.14 Switching Characteristics Fig.15 Dynamic Input Characteristics www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 9/12 20150911 - Rev.001 R6030KNZ1 Datasheet l Electrical characteristic curves Fig.16 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.17 Reverse Recovery Time vs. Inverse Diode Forward Current www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 10/12 20150911 - Rev.001 R6030KNZ1 Datasheet l Measurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform Fig.5-1 dv/dt Measurement Circuit Fig.5-2 dv/dt Waveform www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 11/12 20150911 - Rev.001 R6030KNZ1 Datasheet l Dimensions www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 12/12 20150911 - Rev.001