R6020KNX Nch 600V 20A Power MOSFET Datasheet l Outline VDSS 600V RDS(on)(Max.) 0.196Ω ID ±20A PD 68W TO-220FM l Inner circuit l Features 1) Low on-resistance. 2) Ultra Fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant l Packaging specifications Packing l Application Type Switching Bulk Reel size (mm) - Tape width (mm) - Basic ordering unit (pcs) Taping code 500 - Marking R6020KNX l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) VDSS 600 V ID*1 ±20 A Pulsed drain current IDP*2 ±60 A ±20 V ±30 V Gate - Source voltage Static AC (f＞1Hz) VGSS Avalanche current, single pulse IAS 3.4 A Avalanche energy, single pulse Power dissipation (Tc = 25°C) EAS*3 418 mJ PD 68 W Tj 150 ℃ Tstg -55 to +150 ℃ Junction temperature Operating junction and storage temperature range www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/12 20150911 - Rev.001 R6020KNX l Thermal resistance Datasheet Values Parameter Symbol Unit Min. Typ. Max. RthJC*4 - - 1.8 ℃/W Thermal resistance, junction - ambient RthJA - - 70 ℃/W Soldering temperature, wavesoldering for 10s Tsold - - 265 ℃ Thermal resistance, junction - case l Electrical characteristics (Ta = 25°C) Values Parameter Drain - Source breakdown voltage Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance Gate resistance Symbol Conditions Typ. Max. 600 - - VDS = 600V, VGS = 0V Tj = 25°C - - 100 Tj = 125°C - - 1000 IGSS VGS = ±20V, VDS = 0V - - ±100 nA VGS(th) VDS = 10V, ID = 1mA 3 - 5 V VGS = 10V, ID = 9.5A Tj = 25°C - 0.170 0.196 Tj = 125°C - 0.36 - f = 1MHz, open drain - 2.3 - V(BR)DSS IDSS RDS(on)*5 RG VGS = 0V, ID = 1mA www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. Unit Min. 2/12 V μA Ω Ω 20150911 - Rev.001 R6020KNX Datasheet l Electrical characteristics (Ta = 25°C) Parameter Symbol Values Conditions Unit Min. Typ. Max. VDS = 10V, ID = 10A 5 10 - Forward Transfer Admittance |Yfs| *5 Input capacitance Ciss VGS = 0V - 1550 - Output capacitance Coss VDS = 25V - 1350 - Reverse transfer capacitance Crss f = 1MHz - 55 - VDD ⋍ 300V, VGS = 10V - 30 - tr*5 ID = 10A - 30 - td(off)*5 RL ⋍ 30Ω - 55 - tf*5 RG = 10Ω - 10 - Turn - on delay time Rise time Turn - off delay time Fall time td(on)*5 S pF ns l Gate charge characteristics (Ta = 25°C) Parameter Symbol Values Conditions Unit Min. Typ. Max. Total gate charge Qg*5 VDD ⋍ 300V - 40 - Gate - Source charge Qgs*5 ID = 20A - 12 - Gate - Drain charge Qgd*5 VGS = 10V - 15 - Gate plateau voltage V(plateau) VDD ⋍ 300V, ID = 20A - 6.4 - nC V *1 Limited only by maximum channel temperature allowed. *2 Pw ≤ 10μs, Duty cycle ≤ 1% *3 L≒70mH, VDD=50V, RG=25Ω, STARTING Tj=25℃ *4 TC=25℃ *5 Pulsed www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 3/12 20150911 - Rev.001 R6020KNX Datasheet l Body diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter Symbol Continuous forward current Values Conditions IS*1 Unit Min. Typ. Max. - - 20 A - - 60 A - - 1.5 V - 500 - ns - 7.5 - μC - 30 - A TC = 25℃ Pulse forward current ISP*2 Forward voltage VSD*5 Reverse recovery time trr*5 Reverse recovery charge Qrr*5 Peak reverse recovery current Irrm*5 VGS = 0V, IS = 20A IS = 20A di/dt = 100A/μs l Typical transient thermal characteristics Symbol Value Rth1 0.118 Rth2 0.722 Rth3 2.15 Unit K/W Symbol Value Cth1 0.00216 Cth2 0.0346 Cth3 0.491 Unit Ws/K www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 4/12 20150911 - Rev.001 R6020KNX Datasheet l Electrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Fig.3 Avalanche Energy Derating Curve vs. Junction Temperature www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 5/12 20150911 - Rev.001 R6020KNX Datasheet l Electrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 6/12 20150911 - Rev.001 R6020KNX Datasheet l Electrical characteristic curves Fig.6 Breakdown Voltage vs. Junction Temperature Fig.7 Typical Transfer Characteristics Fig.8 Gate Threshold Voltage vs. Junction Temperature Fig.9 Forward Transfer Admittance vs. Drain Current www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 7/12 20150911 - Rev.001 R6020KNX Datasheet l Electrical characteristic curves Fig.10 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.11 Static Drain - Source On - State Resistance vs. Junction Temperature Fig.12 Static Drain - Source On - State Resistance vs. Drain Current www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 8/12 20150911 - Rev.001 R6020KNX Datasheet l Electrical characteristic curves Fig.13 Typical Capacitance vs. Drain - Source Voltage Fig.14 Switching Characteristics Fig.15 Dynamic Input Characteristics www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 9/12 20150911 - Rev.001 R6020KNX Datasheet l Electrical characteristic curves Fig.16 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.17 Reverse Recovery Time vs. Inverse Diode Forward Current www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 10/12 20150911 - Rev.001 R6020KNX Datasheet l Measurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform Fig.5-1 dv/dt Measurement Circuit Fig.5-2 dv/dt Waveform www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 11/12 20150911 - Rev.001 R6020KNX Datasheet l Dimensions www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 12/12 20150911 - Rev.001