R6015ANX Datasheet Nch 600V 15A Power MOSFET Outline VDSS RDS(on) (Max.) 600V 0.3Ω ID 15A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant Packaging specifications Bulk Packing Application Reel size (mm) - Tape width (mm) - Type Basic ordering unit (pcs) Switching Power Supply Taping code 500 R6015ANX Marking Absolute maximum ratings (Ta = 25°C) Symbol Value Unit VDSS 600 V Tc = 25°C ID *1 ±15 A Tc = 100°C ID *1 ±7.0 A ID,pulse *2 ±60 A Gate - Source voltage VGSS ±30 V Avalanche energy, single pulse EAS *3 15 mJ Avalanche energy, repetitive EAR *4 3.5 mJ Avalanche current IAR *3 7.5 A Power dissipation (Tc = 25°C) PD 50 W Junction temperature Tj 150 °C Tstg −55 to +150 °C dv/dt *5 15 V/ns Parameter Drain - Source voltage Continuous drain current Pulsed drain current Range of storage temperature Reverse diode dv/dt www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/13 2012.02 - Rev.B Data Sheet R6015ANX Absolute maximum ratings Symbol Parameter Conditions Values Unit 50 V/ns VDS = 480V, ID = 15A Drain - Source voltage slope dv/dt Tj = 125°C Thermal resistance Values Symbol Parameter Unit Min. Typ. Max. Thermal resistance, junction - case RthJC - - 2.5 °C/W Thermal resistance, junction - ambient RthJA - - 70 °C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 °C Electrical characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 600 - - V Drain - Source avalanche breakdown voltage V(BR)DS VGS = 0V, ID = 15A - 700 - V Tj = 25°C - 0.1 100 µA Tj = 125°C - - 1000 IGSS VGS = ±30V, VDS = 0V - - ±100 nA VGS (th) VDS = 10V, ID = 1mA 2.5 - 4.5 V - 0.23 0.3 Ω Tj = 125°C - 0.46 - f = 1MHz, open drain - 10.5 - VDS = 600V, VGS = 0V Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage IDSS VGS = 10V, ID = 7.5A Static drain - source on - state resistance Gate input resistance www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. RDS(on) *6 Tj = 25°C RG 2/13 Ω 2012.02 - Rev.B Data Sheet R6015ANX Electrical characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. 4.5 11 - Transconductance gfs *6 VDS = 10V, ID = 7.5A Input capacitance Ciss VGS = 0V - 1700 - Output capacitance Coss VDS = 25V - 1120 - Reverse transfer capacitance Crss f = 1MHz - 80 - Effective output capacitance, energy related Co(er) - 79 - Effective output capacitance, time related Turn - on delay time Rise time VGS = 0V VDS = 0V to 480V Co(tr) tr Turn - off delay time Fall time *6 td(on) *6 *6 td(off) tf *6 S pF pF - 80 - VDD ⋍ 300V, VGS = 10V - 50 - ID = 7.5A - 50 - RL = 40Ω - 150 300 RG = 10Ω - 60 120 ns Gate Charge characteristics (Ta = 25°C) Values Parameter Symbol Unit Conditions Min. Typ. Max. Total gate charge Qg *6 VDD ⋍ 300V - 50 - Gate - Source charge Qgs *6 ID = 15A - 8 - Gate - Drain charge Qgd VGS = 10V - 20 - VDD ⋍ 300V, ID = 15A - 6.0 - Gate plateau voltage *6 V(plateau) nC V *1 Limited only by maximum temperature allowed. *2 PW ≤ 10µs, Duty cycle ≤ 1% *3 L ⋍ 500µH, VDD = 50V, RG = 25Ω, starting Tj = 25°C *4 L ⋍ 500µH, VDD = 50V, RG = 25Ω, starting Tj = 25°C, f = 10kHz *5 Reference measurement circuits Fig.5-1. *6 Pulsed www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3/13 2012.02 - Rev.B Data Sheet R6015ANX Body diode electrical characteristics (Source-Drain) (Ta = 25°C) Values Parameter Symbol Inverse diode continuous, forward current Conditions Unit IS *1 Min. Typ. Max. - - 15 A - - 60 A - - 1.5 V - 482 - ns - 6.3 - µC - 26 - A - 700 - A/µs Tc = 25°C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD *6 VGS = 0V, IS = 15A trr *6 Reverse recovery time *6 Reverse recovery charge Qrr Peak reverse recovery current Irrm *6 Peak rate of fall of reverse recovery current dirr/dt IS = 15A di/dt = 100A/µs Tj = 25°C Typical Transient Thermal Characteristics Symbol Value Rth1 0.117 Rth2 0.662 Rth3 2.14 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Unit K/W 4/13 Symbol Value Cth1 0.00318 Cth2 0.0429 Cth3 0.507 Unit Ws/K 2012.02 - Rev.B Data Sheet R6015ANX Electrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 100 10 Drain Current : ID [A] Power Dissipation : PD/PD max. [%] 120 80 60 40 Operation in this area is limited by RDS(ON) PW = 100us 1 PW = 1ms PW = 10ms 0.1 20 Ta = 25ºC Single Pulse 0.01 0 0 50 100 150 0.1 200 1 10 100 1000 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [°C] Normalized Transient Thermal Resistance : r(t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 1000 100 10 Ta = 25ºC Single Pulse Rth(ch-a)(t) = ｒ(t)×Rth(ch-a) Rth(ch-a) = 70ºC/W 1 0.1 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single 0.01 0.001 0.0001 0.0001 0.01 1 100 Pulse Width : PW [s] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 5/13 2012.02 - Rev.B Data Sheet R6015ANX Electrical characteristic curves Fig.5 Avalanche Power Losses Fig.4 Avalanche Current vs Inductive Load 10 5000 Avalanche Current : IAR [A] 9 8 Avalanche Power Losses : PAR [W] Ta = 25ºC VDD = 50V , RG = 25Ω VGF = 10V , VGR = 0V 7 6 5 4 3 2 1 0 0.01 0.1 1 10 4500 Ta = 25ºC 4000 3500 3000 2500 2000 1500 1000 500 0 1.0E+04 100 Coil Inductance : L [mH] 1.0E+05 1.0E+06 Frequency : f [Hz] Fig.6 Avalanche Energy Derating Curve vs Junction Temperature Avalanche Energy : EAS / EAS max. [%] 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 Junction Temperature : Tj [ºC] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 6/13 2012.02 - Rev.B Data Sheet R6015ANX Electrical characteristic curves Fig.8 Typical Output Characteristics(II) Fig.7 Typical Output Characteristics(I) 10V 15 10V 15 8.0V Ta = 25ºC Pulsed 6.5V 7.0V 12 Ta = 25ºC Pulsed 6.0V Drain Current : ID [A] Drain Current : ID [A] 7.0V 6.5V 5.5V 9 5.0V 6 8.0V 3 10 5.5V 6.0V 5.0V 5 VGS= 4.5V VGS= 4.5V 0 0 0 5 10 15 0 20 2 3 4 5 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] Fig.10 Tj = 150°C Typical Output Characteristics(II) Fig.9 Tj = 150°C Typical Output Characteristics(I) 15 15 5.5V Ta = 150ºC Pulsed 10V 12 12 Drain Current : ID [A] Ta = 150ºC Pulsed 6.0V Drain Current : ID [A] 1 9 6 VGS = 4.5V 3 0 9 10V 6.0V 5.0V 6 VGS= 4.5V 3 0 0 5 10 15 20 0 2 3 4 5 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1 7/13 2012.02 - Rev.B Data Sheet R6015ANX Fig.11 Breakdown Voltage vs. Junction Temperature Fig.12 Typical Transfer Characteristics 100 900 VDS = 10V Pulsed 850 10 800 Drain Current : ID [A] Drain - Source Breakdown Voltage : V(BR)DSS [V] Electrical characteristic curves 750 700 650 600 Ta= 125ºC Ta= 75ºC Ta= 25ºC Ta= −25ºC 1 0.1 550 0.01 500 -50 0 50 100 0 150 1 3 4 5 6 7 Gate - Source Voltage : VGS [V] Fig.13 Gate Threshold Voltage vs. Junction Temperature Fig.14 Transconductance vs. Drain Current 6 100 5 VDS = 10V Pulsed VDS = 10V ID = 1mA Transconductance : gfs [S] Gate Threshold Voltage : VGS(th) [V] Junction Temperature : Tj [°C] 2 4 3 2 1 0 -50 0 50 100 1 0.1 Ta = -25ºC Ta = 25ºC Ta = 75ºC Ta = 125ºC 0.01 0.001 0.001 150 Junction Temperature : Tj [°C] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 10 0.01 0.1 1 10 100 Drain Current : ID [A] 8/13 2012.02 - Rev.B Data Sheet R6015ANX Fig.15 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature 0.6 0.6 Static Drain - Source On-State Resistance : RDS(on) [Ω] Static Drain - Source On-State Resistance : RDS(on) [Ω] Electrical characteristic curves Ta = 25ºC Pulsed 0.5 0.4 0.3 ID = 15A 0.2 ID = 7.5A 0.1 0 0 5 10 15 Gate - Source Voltage : VGS [V] 0.5 VGS = 10V Pulsed 0.4 ID = 15A 0.3 ID = 7.5A 0.2 0.1 0 -50 0 50 100 150 Junction Temperature : Tj [ºC] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current Static Drain - Source On-State Resistance : RDS(on) [Ω] 10 VGS = 10V Pulsed 1 0.1 0.01 0.001 Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = −25ºC 0.1 10 Drain Current : ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 9/13 2012.02 - Rev.B Data Sheet R6015ANX Electrical characteristic curves Fig.18 Typical Capacitance vs. Drain - Source Voltage Fig.19 Coss Stored Energy 10000 14 1000 Coss Stored Energy : EOSS [uJ] Capacitance : C [pF] Ta = 25ºC Ciss Coss Crss 100 10 Ta = 25ºC f = 1MHz VGS = 0V 12 10 8 6 4 2 0 1 0.01 0.1 1 10 100 0 1000 Drain - Source Voltage : VDS [V] 200 400 600 Drain - Source Voltage : VDS [V] Fig.21 Dynamic Input Characteristics 10000 15 tf 1000 Ta = 25ºC VDD ⋍ 300V VGS = 10V RG = 10Ω Pulsed Gate - Source Voltage : VGS [V] Switching Time : t [ns] Fig.20 Switching Characteristics td(off) 100 10 td(on) tr Ta = 25ºC VDD ⋍ 300V ID = 15A RG = 10Ω Pulsed 10 5 0 1 0.01 0.1 1 10 100 10 20 30 40 50 60 70 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 0 10/13 2012.02 - Rev.B Data Sheet R6015ANX Electrical characteristic curves Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current 1,000 VGS = 0V Pulsed 10 Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] 100 Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = −25ºC 1 100 0.1 Ta=25ºC di/dt=100A/µs VGS=0V Pulsed 10 0.01 0 0.5 1 1.5 Source - Drain Voltage : VSD [V] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 0.1 1 10 100 Inverse Diode Forward Current : IS [A] 11/13 2012.02 - Rev.B Data Sheet R6015ANX Measurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 12/13 2012.02 - Rev.B Data Sheet R6015ANX Dimensions (Unit : mm) D TO-220FM E A E1 A1 A A2 A4 F φp b1 L Q c e b DIM A A1 A2 A4 b b1 c D E e E1 F L p Q x x A MILIMETERS MIN MAX 16.60 17.60 1.80 2.20 14.80 15.40 6.80 7.20 0.70 0.85 1.10 1.50 0.70 0.85 9.90 10.30 4.40 4.80 2.54 2.70 3.00 2.80 3.20 11.50 12.50 3.00 3.40 2.10 3.10 0.381 INCHES MIN 0.654 0.071 0.583 0.268 0.028 0.043 0.028 0.39 0.173 MAX 0.693 0.087 0.606 0.283 0.033 0.059 0.033 0.406 0.189 0.10 0.106 0.11 0.453 0.118 0.083 - 0.118 0.126 0.492 0.134 0.122 0.015 Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 13/13 2012.02 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. 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