SCH2080KE SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Datasheet Outline VDSS 1200V RDS(on) (Typ.) 80m ID 35A PD 179W TO-247 (1) (2) (3) Inner circuit Features 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery G(1) *1 *2 4) Low VSD 5) Easy to parallel *1 Body Diode *2 SBD S(3) 6) Simple to drive Packaging specifications 7) Pb-free lead plating ; RoHS compliant Packing Application Reel size (mm) - Tape width (mm) - ・Solar inverters Type Tube ・DC/DC converters Basic ordering unit (pcs) ・Induction heating Taping code ・Motor drives Marking 30 SCH2080KE Absolute maximum ratings (Ta = 25°C) Symbol Value Unit VDSS 1200 V Tc = 25°C ID *1 35 A Tc = 100°C ID *1 22 A ID,pulse *2 80 A VGSS 6 to 22 V Power dissipation (Tc = 25°C) PD 179 W Junction temperature Tj 150 °C Tstg 55 to 150 °C Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Range of storage temperature www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/12 2012.09 - Rev.B DataSheet SCH2080KE Thermal resistance Symbol Parameter Values Min. Typ. Max. Unit Thermal resistance, junction - case RthJC - - 0.7 °C/W Thermal resistance, junction - ambient RthJA - - 50 °C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 °C Electrical characteristics (Ta = 25°C) Parameter Drain - Source breakdown voltage Symbol V(BR)DSS Conditions Values Unit Min. Typ. Max. 1200 - - V Tj = 25°C - 20 400 A Tj = 150°C - 170 - VGS = 0V, ID = 1mA VDS = 1200V, VGS = 0V Zero gate voltage drain current IDSS Gate - Source leakage current IGSS+ VGS = 22V, VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = 6V, VDS = 0V - - -100 nA 1.6 - 4.0 V - 80 117 m Tj = 125°C - 125 - f = 1MHz, open drain - 6.3 - Gate threshold voltage VGS (th) VDS = VGS, ID = 4.4mA VGS = 18V, ID = 10A Static drain - source on - state resistance Gate input resistance www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. RDS(on) *3 Tj = 25°C RG 2/12 2012.09 - Rev.B DataSheet SCH2080KE Electrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Transconductance gfs *3 VDS = 10V, ID = 10A - 3.7 - Input capacitance Ciss VGS = 0V - 1850 - Output capacitance Coss VDS = 800V - 175 - Reverse transfer capacitance Crss f = 1MHz - 20 - VDD = 400V, VGS = 18V - 37 - ID = 10A - 33 - RL = 40 - 70 - RG = 0 - 28 - Turn - on delay time td(on) *3 tr *3 Rise time Turn - off delay time *3 td(off) tf *3 Fall time Unit S pF ns Gate Charge characteristics (Ta = 25°C) Parameter Symbol Total gate charge Qg *3 Gate - Source charge Qgs Gate - Drain charge Qgd *3 Gate plateau voltage V(plateau) *3 Conditions Values Min. Typ. Max. VDD = 400V - 106 - ID = 10A - 27 - VGS = 18V - 31 - VDD = 400V, ID = 10A - 9.7 - Unit nC V *1 Limited only by maximum temperature allowed. *2 PW 10s, Duty cycle 1% *3 Pulsed www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3/12 2012.09 - Rev.B DataSheet SCH2080KE Body diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter Symbol Inverse diode continuous, forward current Values Conditions IS *1 Unit Min. Typ. Max. - - 35 A - - 80 A - 1.3 - V - 37 - ns - 60 - nC - 2.4 - A Tc = 25°C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD *3 VGS = 0V, IS = 10A trr *3 Reverse recovery time Reverse recovery charge Qrr *3 Peak reverse recovery current Irrm IF = 10A, VR = 400V di/dt = 150A/s *3 Typical Transient Thermal Characteristics Symbol Value Rth1 0.098 Rth2 0.237 Rth3 0.212 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Unit K/W 4/12 Symbol Value Cth1 0.005 Cth2 0.032 Cth3 0.666 Unit Ws/K 2012.09 - Rev.B DataSheet SCH2080KE Electrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 PW = 100us 100 Drain Current : ID [A] Power Dissipation : PD/PD max. [%] 120 80 60 40 PW = 1ms 10 Operation in this area is limited by RDS(ON) 1 PW = 10ms 20 Ta = 25ºC Single Pulse PW = 100ms 0.1 0 0 50 100 150 0.1 200 Junction Temperature : Tj [°C] 1 10 100 1000 10000 Drain - Source Voltage : VDS [V] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width Transient Thermal Resistance : Rth [K/W] 1 Ta = 25ºC Single Pulse 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width : PW [s] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 5/12 2012.09 - Rev.B DataSheet SCH2080KE Electrical characteristic curves Fig.4 Typical Output Characteristics(I) 40 VGS= 16V 18 VGS= 18V Drain Current : ID [A] VGS= 14V 25 20 VGS= 12V 15 VGS= 10V 10 5 Ta = 25ºC Pulsed VGS= 18V VGS= 14V 14 VGS= 12V 12 10 8 6 VGS= 10V 4 Ta = 25ºC Pulsed 2 0 0 0 2 4 6 8 0 10 Fig.6 Tj = 150°C Typical Output Characteristics(I) 40 VGS = 16V 25 VGS = 14V Drain Current : ID [A] VGS = 18V 30 VGS = 12V 20 VGS = 10V 15 10 Ta = 150ºC Pulsed 5 2 3 4 5 Fig.7 Tj = 150°C Typical Output Characteristics(II) 20 VGS = 20V 35 1 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] Drain Current : ID [A] VGS= 16V 16 30 Drain Current : ID [A] VGS= 20V 20 VGS= 20V 35 Fig.5 Typical Output Characteristics(II) 18 VGS = 20V 16 VGS = 18V 14 VGS = 16V 12 VGS = 14V VGS = 12V 10 VGS= 10V 8 6 4 Ta = 150ºC Pulsed 2 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1 2 3 4 5 Drain - Source Voltage : VDS [V] 6/12 2012.09 - Rev.B DataSheet SCH2080KE Electrical characteristic curves Fig.8 Typical Transfer Characteristics Fig.9 Gate Threshold Voltage vs. Junction Temperature 5 100 Gate Threshold Voltage : V GS(th) [V] VDS = 10V Pulsed Drain Current : ID [A] 10 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= 25ºC 1 0.1 0.01 0 2 4 6 8 10 12 14 16 18 20 VDS = 10V ID = 10mA 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 -50 0 50 100 150 Junction Temperature : Tj [°C] Gate - Source Voltage : VGS [V] Fig.10 Transconductance vs. Drain Current 10 Transconductance : gfs [S] VDS = 10V Pulsed 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = 25ºC 0.1 0.01 0.01 0.1 1 10 100 Drain Current : ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 7/12 2012.09 - Rev.B DataSheet SCH2080KE Electrical characteristic curves Fig.11 Static Drain - Source On - State Resistance vs. Gate - Source Voltage 0.15 Ta = 25ºC Pulsed 0.6 0.4 ID = 20A 0.2 ID = 10A 0 6 8 10 12 14 16 18 20 22 Static Drain - Source On-State Resistance : RDS(on) [Ω] Static Drain - Source On-State Resistance : RDS(on) [Ω] 0.8 Fig.12 Static Drain - Source On - State Resistance vs. Junction Temperature VGS = 18V Pulsed ID = 20A 0.1 ID = 10A 0.05 0 -50 0 50 100 150 Junction Temperature : Tj [ºC] Gate - Source Voltage : VGS [V] Static Drain - Source On-State Resistance : RDS(on) [Ω] Fig.13 Static Drain - Source On - State Resistance vs. Drain Current 1 VGS = 18V Pulsed 0.1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = 25ºC 0.01 0.1 1 10 100 Drain Current : ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 8/12 2012.09 - Rev.B DataSheet SCH2080KE Electrical characteristic curves Fig.14 Typical Capacitance vs. Drain - Source Voltage Fig.15 Coss Stored Energy 10000 60 Ciss 1000 Capacitance : C [pF] Coss Stored Energy : EOSS [uJ] Ta = 25ºC Coss 100 Crss 10 Ta = 25ºC f = 1MHz VGS = 0V 1 0.1 1 10 100 50 40 30 20 10 0 1000 0 400 600 800 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] Fig.16 Switching Characteristics Fig.17 Dynamic Input Characteristics 20 10000 1000 Gate - Source Voltage : VGS [V] Ta = 25ºC VDD = 400V VGS = 18V RG = 0Ω Pulsed tf Switching Time : t [ns] 200 td(off) 100 tr 10 td(on) Ta = 25ºC VDD = 400V ID = 10A Pulsed 15 10 5 0 1 0.01 0.1 1 10 100 0 Drain Current : ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 20 40 60 80 100 120 Total Gate Charge : Qg [nC] 9/12 2012.09 - Rev.B DataSheet SCH2080KE Electrical characteristic curves Fig.18 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.19 Reverse Recovery Time vs.Inverse Diode Forward Current 1000 VGS = 0V Pulsed Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] 100 10 Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = 25ºC 1 0.1 Ta = 25ºC di / dt = 150A / us VR = 400V VGS = 0V Pulsed 100 10 0.01 0 0.5 1 1.5 1 2 100 Inverse Diode Forward Current : IS [A] Source - Drain Voltage : VSD [V] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 10 10/12 2012.09 - Rev.B DataSheet SCH2080KE Measurement circuits Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2 Switching Waveforms Pulse width ID VDS RL D.U.T. 50% 10% VDD RG 90% 50% 10% VGS VDS 10% 90% td(on) 90% td(off) tr ton Fig.2-1 Gate Charge Measurement Circuit VGS toff Fig.2-2 Gate Charge Waveform VG ID VDS Qg RL VGS D.U.T. IG(Const.) tf Qgs VDD Qgd Charge Fig.3-1 di/dt Measurement Circuit Fig.3-2 di/dt Waveform IF D.U.T. IF L trr 0 VDD RG Irr 10% DRIVER MOSFET Irr drr / dt Irr 90% Irr 100% www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 11/12 2012.09 - Rev.B DataSheet SCH2080KE Dimensions (Unit : mm) TO-247 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 12/12 2012.09 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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