R6011KNJ Nch 600V 11A Power MOSFET Datasheet l Outline VDSS 600V TO-263 RDS(on)(Max.) 0.39Ω SC-83 ID ±11A LPT(S) PD 124W l Inner circuit l Features 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant l Packaging specifications Embossed Tape Packing l Application Type Switching Reel size (mm) 330 Tape width (mm) 24 Basic ordering unit (pcs) Taping code 1000 TL Marking R6011KNJ l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) VDSS 600 V ID*1 ±11 A Pulsed drain current IDP*2 ±33 A ±20 V ±30 V Gate - Source voltage static VGSS AC(f＞1Hz) Avalanche current, single pulse IAS 1.8 A Avalanche energy, single pulse Power dissipation (Tc = 25°C) EAS*3 210 mJ PD 124 W Tj 150 ℃ Tstg -55 to +150 ℃ Junction temperature Operating junction and storage temperature range www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/12 20150911 - Rev.001 R6011KNJ l Thermal resistance Datasheet Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case RthJC*4 - - 1.0 ℃/W Thermal resistance, junction - ambient RthJA*5 - - 80 ℃/W Tsold - - 265 ℃ Soldering temperature, wavesoldering for 10s l Electrical characteristics (Ta = 25°C) Values Parameter Drain - Source breakdown voltage Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance Gate resistance Symbol Conditions Typ. Max. 600 - - VDS = 600V, VGS = 0V Tj = 25°C - - 100 Tj = 125°C - - 1000 IGSS VGS = ±20V, VDS = 0V - - ±100 nA VGS(th) VDS = 10V, ID = 1mA 3 - 5 V VGS = 10V, ID = 3.8A Tj = 25°C - 0.34 0.39 Tj = 125°C - 0.72 - f = 1MHz, open drain - 1.5 - V(BR)DSS IDSS RDS(on)*6 RG VGS = 0V, ID = 1mA www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. Unit Min. 2/12 V μA Ω Ω 20150911 - Rev.001 R6011KNJ Datasheet l Electrical characteristics (Ta = 25°C) Parameter Symbol Values Conditions Unit Min. Typ. Max. 2.9 5.8 - Forward Transfer Admittance |Yfs| *6 Input capacitance Ciss VGS = 0V - 740 - Output capacitance Coss VDS = 25V - 630 - Reverse transfer capacitance Crss f = 1MHz - 30 - VDD ⋍ 300V, VGS = 10V - 20 - ID = 5.5A - 25 - td(off)*6 RL ⋍ 54.9Ω - 40 - tf*6 RG = 10Ω - 20 - Turn - on delay time td(on)*6 tr*6 Rise time Turn - off delay time Fall time VDS = 10V, ID = 5.5A S pF ns l Gate charge characteristics (Ta = 25°C) Parameter Symbol Values Conditions Unit Min. Typ. Max. Total gate charge Qg*6 VDD ⋍ 300V - 22 - Gate - Source charge Qgs*6 ID = 11A - 6 - Gate - Drain charge Qgd*6 VGS = 10V - 10 - Gate plateau voltage V(plateau) VDD ⋍ 300V, ID = 11A - 6.7 - nC V *1 Limited only by maximum channel temperature allowed. *2 Pw ≤ 10μs, Duty cycle ≤ 1% *3 L≒100mH, VDD=50V, RG=25Ω, STARTING Tj=25℃ *4 TC=25℃ *5 Mounted on a epoxy PCB FR4 (25mm x 27mm x 0.8mm) *6 Pulsed www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 3/12 20150911 - Rev.001 R6011KNJ Datasheet l Body diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter Symbol Continuous forward current Values Conditions IS*1 Unit Min. Typ. Max. - - 11 A - - 33 A - - 1.5 V - 355 - ns - 3.8 - μC - 22 - A TC = 25℃ Pulse forward current ISP*2 Forward voltage VSD*6 Reverse recovery time trr*6 Reverse recovery charge Qrr*6 Peak reverse recovery current Irrm*6 VGS = 0V, IS = 11A IS = 11A di/dt = 100A/μs l Typical transient thermal characteristics Symbol Value Rth1 0.118 Rth2 0.470 Rth3 0.623 Unit K/W Symbol Value Cth1 0.00134 Cth2 0.00425 Cth3 0.165 Unit Ws/K www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 4/12 20150911 - Rev.001 R6011KNJ Datasheet l Electrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Fig.3 Avalanche Energy Derating Curve vs. Junction Temperature www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 5/12 20150911 - Rev.001 R6011KNJ Datasheet l Electrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 6/12 20150911 - Rev.001 R6011KNJ Datasheet l Electrical characteristic curves Fig.6 Breakdown Voltage vs. Junction Temperature Fig.7 Typical Transfer Characteristics Fig.8 Gate Threshold Voltage vs. Junction Temperature Fig.9 Forward Transfer Admittance vs. Drain Current www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 7/12 20150911 - Rev.001 R6011KNJ Datasheet l Electrical characteristic curves Fig.10 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.11 Static Drain - Source On - State Resistance vs. Junction Temperature Fig.12 Static Drain - Source On - State Resistance vs. Drain Current(l) www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 8/12 20150911 - Rev.001 R6011KNJ Datasheet l Electrical characteristic curves Fig.13 Typical Capacitance vs. Drain - Source Voltage Fig.14 Switching Characteristics Fig15 Dynamic Input Characteristics www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 9/12 20150911 - Rev.001 R6011KNJ Datasheet l Electrical characteristic curves Fig.16 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.17 Reverse Recovery Time vs. Inverse Diode Forward Current www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 10/12 20150911 - Rev.001 R6011KNJ Datasheet l Measurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform Fig.5-1 dv/dt Measurement Circuit Fig.5-2 dv/dt Waveform www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 11/12 20150911 - Rev.001 R6011KNJ Datasheet l Dimensions www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 12/12 20150911 - Rev.001