RQ5E030AJTCL-E : Transistors

RQ5E030AJ
Nch 30V 3A Middle Power MOSFET
Datasheet
l Outline
VDSS
30V
RDS(on)(Max.)
ID
PD
75mΩ
TSMT3
SC-96
1W
SOT-346T
l Inner circuit
l Features
1) Low on - resistance.
2) Small Surface Mount Package.
3) Pb-free lead plating ; RoHS compliant
l Packaging specifications
Embossed
Tape
180
Packing
Reel size (mm)
l Application
Type
Switching
Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
Marking
TL
HW
l Absolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
Value
Unit
VDSS
ID*1
30
V
ID,pulse*2
VGSS
EAS*3
IAS*3
PD*4
Tj
±6.0
±12
0.69
3.0
1
150
-55 to +150
A
V
mJ
A
W
Tstg
℃
℃
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© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150730 - Rev.002 RQ5E030AJ
Datasheet
l Thermal resistance
Parameter
Symbol
RthJA*4
Thermal resistance, junction - ambient
Values
Min.
Typ.
Max.
-
-
125
Unit
℃/W
l Electrical characteristics (T a = 25°C)
Parameter
Symbol
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Conditions
V(BR)DSS VGS = 0V, ID = 1mA
ΔV(BR)DSS ID = 1mA
ΔTj referenced to 25℃
Values
Unit
Min.
Typ.
Max.
30
-
-
V
-
18
-
mV/℃
Zero gate voltage
drain current
IDSS
VDS = 30V, VGS = 0V
-
-
1
μA
Gate - Source leakage current
IGSS
VGS = ±12V, VDS = 0V
-
-
±100
nA
VGS(th)
VDS = VGS, ID = 1mA
0.5
-
1.5
V
-
-18
-
mV/℃
VGS = 4.5V, ID = 3.0A
-
57
75
VGS = 2.5V, ID = 1.5A
-
79
103
f = , open drain
-
3.3
-
Ω
2.7
-
-
S
Gate threshold voltage
Gate threshold voltage
temperature coefficient
ΔVGS(th) ID = 1mA
ΔTj referenced to 25℃
Static drain - source
on - state resistance
RDS(on)*5
Gate input resistance
RG
Forward Transfer
Admittance
|Yfs| *5
VDS = 5V, ID = 3A
mΩ
*1 Limited only by maximum temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L ⋍ 100μH, V DD = 15V, RG = 25Ω, STARTING Tch = 25℃ Fig.3-1,3-2
*4 Mounted on a ceramic boad (30×30×0.8mm)
*5 Pulsed
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© 2015 ROHM Co., Ltd. All rights reserved.
2/11
20150730 - Rev.002
RQ5E030AJ
Datasheet
l Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Values
Conditions
Min.
Typ.
Max.
Input capacitance
Ciss
VGS = 0V
-
245
-
Output capacitance
Coss
VDS = 10V
-
30
-
Reverse transfer capacitance
Crss
f = 1MHz
-
20
-
VDD ⋍ 15V,VGS = 4.5V
-
5.0
-
tr*5
ID = 1.5A
-
5.0
-
td(off)*5
RL ⋍ 10Ω
-
12
-
tf*5
RG = 10Ω
-
3.5
-
Turn - on delay time
Rise time
Turn - off delay time
Fall time
td(on)*5
Unit
pF
ns
l Gate charge characteristics (Ta = 25°C)
Parameter
Symbol
Total gate charge
Qg*5
Gate - Source charge
Qgs*5
Gate - Drain charge
Qgd*5
Values
Conditions
VGS = 10V
VDD ⋍ 15V
ID = 3.0A
VGS = 4.5V
Min.
Typ.
Max.
-
4.5
-
-
2.2
-
-
0.6
-
-
0.5
-
Unit
nC
l Body diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Symbol
Body diode continuous
forward current
IS*1
Body diode
pulse current
Forward voltage
ISP*2
Conditions
Unit
Min.
Typ.
Max.
-
-
0.8
A
-
-
6.0
A
-
-
1.2
V
Ta = 25℃
VSD*5
VGS = 0V, IS = 0.8A
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© 2015 ROHM Co., Ltd. All rights reserved.
Values
3/11
20150730 - Rev.002
RQ5E030AJ
Datasheet
l Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power dissipation
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© 2015 ROHM Co., Ltd. All rights reserved.
4/11
20150730 - Rev.002
RQ5E030AJ
Datasheet
l Electrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
Temperature
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© 2015 ROHM Co., Ltd. All rights reserved.
5/11
20150730 - Rev.002
RQ5E030AJ
Datasheet
l Electrical characteristic curves
Fig.8 Typical Transfer Characteristics
Fig.9 Gate Threshold Voltage vs. Junction
Temperature
Fig.10 Transconductance vs. Drain Current
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© 2015 ROHM Co., Ltd. All rights reserved.
6/11
20150730 - Rev.002
RQ5E030AJ
Datasheet
l Electrical characteristic curves
Fig.11 Drain Current Derating Curve
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
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© 2015 ROHM Co., Ltd. All rights reserved.
7/11
20150730 - Rev.002
RQ5E030AJ
Datasheet
l Electrical characteristic curves
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(III)
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8/11
20150730 - Rev.002
RQ5E030AJ
Datasheet
l Electrical characteristic curves
Fig.17 Typical Capacitance vs. Drain Source Voltage
Fig.18 Switching Characteristics
Fig.19 Dynamic Input Characteristics
Fig.20 Source Current vs. Source Drain
Voltage
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9/11
20150730 - Rev.002
RQ5E030AJ
Datasheet
l Measurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 AVALANCHE MEASUREMENT CIRCUIT
Fig.3-2 AVALANCHE WAVEFORM
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© 2015 ROHM Co., Ltd. All rights reserved.
10/11
20150730 - Rev.002
RQ5E030AJ
Datasheet
l Dimensions
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© 2015 ROHM Co., Ltd. All rights reserved.
11/11
20150730 - Rev.002