RB520S-30 Diodes Schottky barrier diode RB520S-30 z Land size figure (Unit : mm) z Dimensions (Unit : mm) zApplications Low current rectification 0.8 0.12±0.05 0.6 0.8±0.05 1.6±0.1 1.2±0.05 1.7 zFeatures 1) Ultra Small mold type. (EMD2) 2) Low IR. 3) High reliability. EMD2 zStructure zConstruction Silicon epitaxial planar 0.3±0.05 0.6±0.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) z Taping specifications (Unit : mm) 0.2±0.05 φ1.5±0.05 2.0±0.05 1.26±0.05 0 3.5±0.05 0.6 1.3±0.06 0 2.45±0.1 8.0±0.15 1.75±0.1 4.0±0.1 0.2 φ0.5 0.95±0.06 0 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature 空ポケット Empty poc ket 4.0±0.1 2.0±0.05 Limits 30 200 1 125 -40 to +125 Symbol VR Io IFSM Tj Tstg 0.76±0.05 Unit V mA A ℃ ℃ zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF Min. - Typ. - Max. 0.6 Unit V IR - - 1 µA Conditions IF=200mA VR=10V Rev.C 1/3 RB520S-30 Diodes zElectrical characteristic curves (Ta=25°C) 1000000 Ta=125℃ Ta=75℃ 10 1 Ta=25℃ 0.1 Ta=-25℃ 0.01 10000 1000 Ta=25℃ 100 Ta=-25℃ 10 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 30 1000 510 500 490 700 600 500 400 300 AVE:114nA 200 AVE:507.6mV 1cyc 15 AVE:5.60A 5 0 8.3ms 8.3ms 1cyc 5 Ifsm t 5 0 1 10 1 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISRESION MAP 0.3 Mounted on epoxy board 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.01 IF=100mA 300us 100 Rth(j-a) Rth(j-c) 0.008 D=1/2 0.2 Sin(θ＝180) DC 0.1 REVERSE POWER DISSIPATION:PR (W) time FORWARD POWER DISSIPATION:Pf(W) 1ms 10 10 Ifsm 0 1000 AVE:28.2pF 15 Ct DISPERSION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms IM=10mA 20 0 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 10000 25 5 10 10 30 IR DISPERSION MAP 30 20 35 0 VF DISPERSION MAP 25 40 100 480 30 Ta=25℃ f=1MHz VR=0V n=10pcs 45 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 800 REVERSE CURRENT:IR(nA) 520 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 50 Ta=25℃ VR=10V n=30pcs 900 Ta=25℃ IF=200mA n=30pcs 10 1 0 600 530 FORWARD VOLTAGE:VF(mV) Ta=75℃ 1 0 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHｚ 100000 0.001 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 100 Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 1000 DC 0.006 D=1/2 Sin(θ＝180) 0.004 0.002 10 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0 0.1 0.2 0.3 0.4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.5 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.C 2/3 RB520S-30 Diodes 0.5 0.4 DC t 0.3 T VR D=t/T VR=15V Tj=125℃ D=1/2 0.2 0.1 Sin(θ＝180) Io 0A 0V Io 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 0.5 t 0.4 T DC VR D=t/T VR=15V Tj=125℃ 0.3 D=1/2 0.2 0.1 Sin(θ＝180) 0 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating curve (Io-Ta) 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating curve (Io-Tc) Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1