RB751G-40 Diodes Schottky barrier diode RB751G-40 zApplications General rectification zLand size figure zExternal dimensions (Unit ● 寸法図（ ） : mm) 0.5 0.13±0.03 0.5 0.6±0.05 1.0±0.05 1.4±0.05 1.2 zFeatures 1) Small power mold type. (VMD2) 2) Low VF 3) High reliability VMD2 zStructure 0.27±0.03 zConstruction Silicon epitaxial planar 0.5±0.05 ROHM : VMD2 dot (year week factory) zTaping dimensions (Unit : mm) 0.18±0.05 φ1.5+0.1 0 2±0.05 8.0±0.3 0.1 0.4 2.1±0.1 1.11±0.05 3.5±0.05 1.75±0.1 4±0.1 φ0.5 0.3 2±0.05 4±0.1 0.76±0.1 0.65±0.05 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature Limits 40 30 30 200 125 -40 to +125 Symbol VRM VR Io IFSM Tj Tstg Unit V V mA mA ℃ ℃ zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR Min. - Typ. - Max. 0.37 0.5 Unit V µA Ct - 2 - pF Conditions IF=1mA VR=30V VR=1V , f=1MHz Rev.B 1/3 RB751G-40 Diodes zElectrical characteristic curves 100 Ta=125℃ 100000 10 Ta=125℃ Ta=25℃ 1 Ta=-25℃ 0.1 0.01 10000 Ta=75℃ 1000 Ta=25℃ 100 Ta=-25℃ 10 0.001 100 200 300 400 500 600 700 800 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 15 20 25 30 35 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 40 320 310 300 290 800 600 500 400 AVE:304.2mV AVE:111.0nA 5 4 AVE:1.81pF 3 2 1 0 Ct DISPERSION MAP 10 1cyc Ifsm 8.3ms 10 AVE:3.40A 5 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 5 0 AVE:11.7ns PEAK SURGE FORWARD CURRENT:IFSM(A) RESERVE RECOVERY TIME:trr(ns) 30 15 Ifsm 8 8.3ms 8.3ms 1cyc 6 4 2 0 0 1 trr DISPERSION MAP IFSM DISRESION MAP t 6 4 2 0 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 100 Rth(j-a) 0.04 Rth(j-c) 100 Mounted on epoxy board IM=1mA IF=10mA FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0.05 1000 10 30 6 IR DISPERSION MAP 20 25 Ta=25℃ f=1MHz VR=0V n=10pcs 7 0 VF DISPERSION MAP 20 8 100 280 15 9 700 200 10 10 Ta=25℃ VR=30V n=30pcs 900 300 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=1mA n=30pcs REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 5 1000 330 1 0.1 1 0 PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) f=1MHz Ta=75℃ 10 D=1/2 0.03 DC Sin(θ＝180) 0.02 0.01 1ms 10 0.001 time 300us 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 0 1000 0 0.01 0.02 0.03 0.04 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.B 0.05 2/3 RB751G-40 Diodes 0.1 0.1 D=1/2 DC Sin(θ＝180) 0.001 0A 0V 0.08 0.06 DC 0.04 0A 0V Io t T VR D=t/T VR=20V Tj=125℃ D=1/2 0.02 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.002 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.003 0.08 0.06 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 40 T 0.04 D=1/2 0.02 Sin(θ＝180) 0 0 0 t DC Sin(θ＝180) 0 Io VR D=t/T VR=20V Tj=125℃ 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1