Datasheet Serial EEPROM Series Standard EEPROM WLCSP EEPROM BU9891GUL-W (4Kbit) ●General Description BU9891GUL-W is serial EEPROM of serial 3-line interface method ●Package W(Typ.) x D(Typ.) x H(Max.) ●Features 3-line communications of chip select, serial clock, serial data input / output (the case where input and output are shared) Actions available at high speed 2MHz clock (2.5V to 5.5V) Speed write available (write time 5ms max.) 1.7V to 5.5V single power source action Address auto increment function at read action Write mistake prevention function ¾ Write prohibition at power on ¾ Write prohibition by command code ¾ Write mistake prevention function at low voltage Program cycle auto delete and auto end function Program condition display by READY / BUSY Low current consumption ¾ At write action (at 5V): 1.2mA (Typ.) ¾ At read action (at 5V): 0.3mA (Typ.) ¾ At standby action (at 5V): 0.1μA (Typ.) (CMOS input) Data retention for 40 years. Data rewrite up to 100,000times. Data at shipment all addresses FFFFh ●BU9891GUL-W Capacity Bit format Type Power source voltage Package type 4Kbit 256×16 BU9891GUL-W 1.7V to 5.5V VCSP50L1 ●Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Ratings Unit Impressed voltage VCC -0.3 to +6.5 V Permissible dissipation Pd 220 mW Storage temperature range Tstg -65 to +125 ℃ Action temperature range Topr -40 to +85 ℃ ‐ -0.3 to VCC+0.3 V Terminal voltage Remarks When using at Ta=25℃ or higher, 2.2mW to be reduced per 1℃ ●Memory cell characteristics (VCC=1.7V to 5.5V) Limit Parameter Number of data rewrite times *1 Unit Condition Min. Typ. Max. 100,000 - - Times Ta=25℃ 40 - - Years Ta=25℃ Data hold years *1 ○Shipment data all address FFFFh * 1:Not 100% TESTED ○Product structure：Silicon monolithic integrated circuit www.rohm.com ©2012 ROHM Co., Ltd. All rights reserved. TSZ22111･14･001 ○This product is not designed protection against radioactive rays 1/22 TSZ02201-0R2R0G100440-1-2 3.SEP.2012 Rev.001 Datasheet BU9891GUL-W (4Kbit) ●Recommended Operating Ratings Parameter Symbol Ratings Power source voltage VCC 1.7 to 5.5 Input voltage VIN 0 to VCC Unit V ●Electrical characteristics (Unless otherwise specified, VCC=1.7V to 5.5V, Ta=-40℃ to +85℃) Limits Symbol Unit Parameter Min. Typ. Max. Condition “L” input voltage VIL -0.3 - 0.2×VCC V “H” input voltage VIH 0.8×VCC - VCC+0.3 V “L” output voltage 1 VOL1 0 - 0.4 V IOL=2.1mA, 4.0V≦VCC≦5.5V “L” output voltage 2 VOL2 0 - 0.2 V IOL=100μA “H” output voltage 1 VOH1 2.4 - VCC V IOH=-0.4mA, 4.0V≦VCC≦5.5V “H” output voltage 2 VOH2 VCC-0.2 - VCC V IOH=-100μA Input leak current ILI -1 - +1 µA VIN=0V to VCC Output leak current ILO -1 - +1 µA VOUT=0V to VCC, CS=0V ICC1 - - 3.0 mA fSK=2MHz, tE/W=5ms (WRITE) ICC2 - - 1.5 mA fSK=2MHz (READ) ISB - - 2 µA CS=0V, DO=OPEN Current consumption at action Standby current www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2/22 TSZ02201-0R2R0G100440-1-2 3.SEP.2012 Rev.001 Datasheet BU9891GUL-W (4Kbit) ●Action timing characteristics (Ta=-40℃ to +85℃, VCC=2.5V to 5.5V) Parameter Symbol SK frequency SK “H” time SK “L” time CS “L” time CS setup time DI setup time CS hold time DI hold time Data “1” output delay time Data “0” output delay time Time from CS to output establishment Time from CS to High-Z Write cycle time fSK tSKH tSKL tCS tCSS tDIS tCSH tDIH tPD1 tPD0 tSV tDF tE/W Min. 230 230 200 200 100 0 100 - 2.5V≦VCC≦5.5V Typ. Max. 2 200 200 150 150 5 Min. 0.8 0.8 1 200 100 0 100 - 1.7V≦VCC≦2.5V Typ. Max. 500 0.7 0.7 0.7 200 5 Unit MHz ns ns ns ns ns ns ns ns ns ns ns ms (Ta=-40℃ to +85℃, VCC=1.7V to 2.5V) Parameter Symbol SK frequency SK “H” time SK “L” time CS “L” time CS setup time DI setup time CS hold time DI hold time Data “1” output delay time Data “0” output delay time Time from CS to output establishment Time from CS to High-Z Write cycle time fSK tSKH tSKL tCS tCSS tDIS tCSH tDIH tPD1 tPD0 tSV tDF tE/W Unit kHz us us us ns ns ns ns us us us ns ms ●Sync data input / output timing CS CS tCSS tSKH tSKL tCSH SK tDIS tDI H DI tPD1 t PD0 DO(READ) tDF DO(WRITE) STATUS VALID Figure 1. Sync data input / output timing ○Data is taken by DI sync with the rise of SK. ○At read action, data is output from DO in sync with the rise of SK. ○The status signal at write (READY / BUSY) is output after tCS from the fall of CS after write command input, at the area DO where CS is “H”, and valid until the next command start bit is input. And, while CS is “L”, DO becomes High-Z. ○After completion of each mode execution, set CS “L” once for internal circuit reset, and execute the following action mode. www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 3/22 TSZ02201-0R2R0G100440-1-2 3.SEP.2012 Rev.001 Datasheet BU9891GUL-W (4Kbit) ●Block Diagram CS Power source voltage detection Command decode Control SK DI Clock generation High voltage occurrence Write prohibition Address buffer Command register Address decoder 8bit 8bit 4,096 bit EEPROM Data register DO R/W amplifier 16bit 16bit Dummy bit ●Pin Configuration (BOTTOM VIEW) B B1 B2 (SK) A A1 B3 (GND) A2 (DI) (DO) 1 2 (CS) A3 (Vcc) 3 ●Pin Descriptions Land No. Pin Name I/O A1 DI INPUT A2 DO OUTPUT A3 Vcc - B1 SK INPUT B2 GND - Grand (0V) B3 CS INPUT Chip Select www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Function Start Bit, Op.code, Address, Serial Data Input Serial Data Output, Ready/Busy Status Output Power Supply Serial Data Clock Input 4/22 TSZ02201-0R2R0G100440-1-2 3.SEP.2012 Rev.001 Datasheet BU9891GUL-W (4Kbit) ●Typical Performance Curves (The following characteristic data are Typ. values.) Figure 3. L input voltage VIL (CS,SK,DI) Figure 2. H input voltage VIH (CS,SK,DI) Figure 4. L output voltage VOL-IOL (Vcc=1.8V) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Figure 5. L output voltage VOL-IOL (Vcc=2.5V) 5/22 TSZ02201-0R2R0G100440-1-2 3.SEP.2012 Rev.001 Datasheet BU9891GUL-W (4Kbit) ●Typical Performance Curves‐Continued Figure 6. L output voltage VOL-IOL (Vcc=4.0V) Figure 7. H output voltage VOH-IOH (Vcc=1.8V) Figure 8. H output voltage VOH-IOH (Vcc=2.5V) Figure 9. H output voltage VOH-IOH (Vcc=4.0V) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 6/22 TSZ02201-0R2R0G100440-1-2 3.SEP.2012 Rev.001 Datasheet BU9891GUL-W (4Kbit) ●Typical Performance Curves‐Continued Figure 10. Input leak current ILI (CS,SK,DI) Figure 11. Output leak current ILO (DO) Figure 12. Current consumption at WRITE action ICC1 (WRITE, fSK=2MHz) Figure 13. Consumption current at READ action ICC2 (READ, fSK=2MHz) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 7/22 TSZ02201-0R2R0G100440-1-2 3.SEP.2012 Rev.001 Datasheet BU9891GUL-W (4Kbit) ●Typical Performance Curves‐Continued Figure 15. Consumption current at READ action ICC2 (READ, fSK=500kHz) Figure 14. Current consumption at WRITE action ICC1 (WRITE, fSK=500kHz) Figure 17. SK frequency fSK Figure 16. Consumption current at standby action ISB www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 8/22 TSZ02201-0R2R0G100440-1-2 3.SEP.2012 Rev.001 Datasheet BU9891GUL-W (4Kbit) ●Typical Performance Curves‐Continued Figure 19. SK low time tSKL Figure 18. SK high time tSKH Figure 21. CS hold time tCSH Figure 20. CS low time tCS www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 9/22 TSZ02201-0R2R0G100440-1-2 3.SEP.2012 Rev.001 Datasheet BU9891GUL-W (4Kbit) ●Typical Performance Curves‐Continued Figure 22. CS setup time tCSS Figure 23. DI hold time tDIH Figure 24. DI setup time tDIS Figure 25. Data “0” output delay time tPD0 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10/22 TSZ02201-0R2R0G100440-1-2 3.SEP.2012 Rev.001 Datasheet BU9891GUL-W (4Kbit) ●Typical Performance Curves‐Continued Figure 26. Output data “1” delay time tPD1 Figure 27. Time from CS to output establishment tSV Figure 28. Time from CS to High-Z tDF Figure 29. Write cycle time tE/W www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 11/22 TSZ02201-0R2R0G100440-1-2 3.SEP.2012 Rev.001 Datasheet BU9891GUL-W (4Kbit) ●Description of operations Communications of the Microwire Bus are carried out by SK (serial clock), DI (serial data input),DO (serial data output) ,and CS (chip select) for device selection. When to connect one EEPROM to a microcontroller, connect it as shown in Figure 30(a) or Figure 30(b). When to use the input and output common I/O port of the microcontroller, connect DI and DO via a resistor as shown in Figure 30(b), and connection by 3 lines is available. In the case of plural connections, refer to Figure 30(c). Microcontroller BU9891GUL-W SK SK SK SK DO DI DO DI DI DO CS2 CS1 CS0 SK DO DI CS DO Figure 30-(a) Connection by 4 lines Figure 30-(b) Connection by 3 lines CS SK DI DO CS Microcontroller CS CS SK DI DO BU9891GUL-W CS SK DI DO Microcontroller CS Device 1 Device 2 Device 3 Figure 30-(c) Connection example of plural devices Figure 30. Connection method with microcontroller Communications of the Microwire Bus are started by the first “1” input after the rise of CS. This input is called a start bit. After input of the start bit, inputs ope code, address and data. Address and data are input all in MSB first manners. “0” input after the rise of CS to the start bit input is all ignored. Therefore, when there is limitation in the bit width of PIO of the microcontroller, input “0” before the start bit input, to control the bit width. ●Command mode Command Read (READ) *1 Write enable (WEN) Write (WRITE) *2 Write disable (WDS) ・ ・ Start bit Ope code Address Data 1 10 A7,A6,A5,A4,A3,A2,A1,A0 D15 to D0(READ DATA) 1 00 1 01 1 00 1 1 * * * * * * A7,A6,A5,A4,A3,A2,A1,A0 0 0 * * * D15 to D0(WRITE DATA) * * * Input the address and the data in MSB first manners. As for *, input either VIH or VIL. *Start bit Acceptance of all the commands of this IC starts at recognition of the start bit. The start bit means the first “1” input after the rise of CS. *1 *2 As for read, by continuous SK clock input after setting the read command, data output of the set address starts, and address data in significant order are sequentially output continuously. (Auto increment function) When the read and the write all commands are executed, data written in the selected memory cell is automatically deleted, and input data is written. www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 12/22 TSZ02201-0R2R0G100440-1-2 3.SEP.2012 Rev.001 Datasheet BU9891GUL-W (4Kbit) ●Timing chart 1) Read cycle (READ) ～ ～ ～ ～ ～ ～ CS ～ ～ *1 1 4 27 28 ～ ～ DI 2 ～ ～ 1 ～ ～ SK 0 A7 A1 ～ ～ 1 A0 ～ ～ ～ ～ *2 ～ ～ D14 D0 D1 D15 D14 ～ ～ D15 ～ ～ 0 DO High-Z *1 Start bit When data “1” is input for the first time after the rise of CS, this is recognized as a start bit. And when “1” is input after plural “0” are input, it is recognized as a start bit, and the following operation is started. This is common to all the commands to described hereafter. Figure 31. Read cycle ○When the read command is recognized, input address data (16bit) is output to serial. And at that moment, at taking A0, in sync with the rise of SK, “0” (dummy bit) is output. And, the following data is output in sync with the rise of SK. This IC has an address auto increment function valid only at read command. This is the function where after the above read execution, by continuously inputting SK clock, the above address data is read sequentially. And, during the auto increment, keep CS at “H”. ～ ～ ～ ～ ～ ～ 2) Write cycle (WRITE) tCS CS ～ ～ A1 A0 D15 D14 D1 D0 ～ ～ A7 ～ ～ 1 ～ ～ 0 ～ ～ 1 27 4 ～ ～ DI 2 ～ ～ 1 ～ ～ ～ ～ SK STATUS tSV BUSY READY ～ ～ DO High-Z tE/W Figure 32. Write cycle ○In this command, input 16bit data (D15 to D0) are written to designated addresses (Am to A0). The actual write starts by the fall of CS of D0 taken SK clock. When STATUS is not detected, (CS=”L” fixed) Max. 5ms in conformity with tE/W, and when STATUS is detected (CS=”H”), all commands are not accepted for areas where “L” (BUSY) is output from D0, therefore, do not input any command. 3) Write enable (WEN) / disable (WDS) cycle ～ ～ CS 1 2 3 4 5 6 7 1 0 0 11 ～ ～ DI 8 ～ ～ ENABLE=1 1 DISABLE=0 0 ～ ～ SK DO High-Z Figure 33. Write enable (WEN) / disable (WDS) cycle ○At power on, this IC is in write disable status by the internal RESET circuit. Before executing the write command, it is necessary to execute the write enable command. And, once this command is executed, it is valid unitl the write disable command is executed or the power is turned off. However, the read command is valid irrespective of write enable / diable command. Input to SK after 6 clocks of this command is available by either “H” or “L”, but be sure to input it. ○When the write enable command is executed after power on, write enable status gets in. When the write disable command is executed then, the IC gets in write disable status as same as at power on, and then the write command is canceled thereafter in software manner. However, the read command is executable. In write enable status, even when the write command is input by mistake, write is started. To prevent such a mistake, it is recommended to execute the write disable command after completion of write. www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 13/22 TSZ02201-0R2R0G100440-1-2 3.SEP.2012 Rev.001 Datasheet BU9891GUL-W (4Kbit) ●Application 1) Method to cancel each command ○READ Start bit Ope code Address Data 1bit 2bit 8bit Cancel is available in all areas in read mode. ・Method to cancel：cancel by CS=“L” 16bit Figure 34. READ cancel available timing ・27 Rise of clock ○WRITE SK DI 26 D1 *1 27 D0 Enlarged figure Start bit 1bit Ope code Address 2bit 8bit a *1 Data tE/W 16bit b Figure 35. WRITE cancel available timing a：From start bit to 27 clock rise＊1 Cancel by CS=“L” Note 1) If Vcc is made OFF in this area, designated address data is not guaranteed, therefore write once again. b：27 clock rise and after＊1 Cancellation is not available by any means. If Vcc is made OFF in this area, designated address data is not guaranteed, therefore write once again. And when SK clock is input continuously, cancellation is not available. Note 2) If CS is started at the same timing as that of the SK rise, write execution/cancel becomes unstable, therefore, it is recommended to fail in SK=”L” area. As for SK rise, necessary timing of tCSS/tCSH or higher. 2) At standby ○Standby current When CS is “L”, SK input is “L”, DI input is “H”, and even with middle electric potential, current does not increase. ○Timing As shown in Figure 36, when SK at standby is “H”, if CS is started, DI status may be read at the rise edge. At standby and at power ON/OFF, when to start CS, set SK input or DI input to “L” status. If CS is started when SK=”L” or DI=”L”, a start bit is recognized correctly. CS=SK=DI=”H” Wrong recognition as a start bit CS CS Start bit input SK SK DI DI Figure 37. Normal action timing Figure 36. Wrong action timing www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Start bit input 14/22 TSZ02201-0R2R0G100440-1-2 3.SEP.2012 Rev.001 Datasheet BU9891GUL-W (4Kbit) 3) Equivalent circuit Output circuit Input citcuit RESET int. CSint. CS DO OEint. Figure 39. Input circuit (CS) Figure 38. Output circuit (DO) Input circuit Input circuit CS int. CS int. DI SK Figure 41. Input circuit (SK) Figure 40. Input circuit (DI) 4) I/O peripheral circuit 4-1) Pull down CS. By making CS=“L” at power ON/OFF, mistake in operation and mistake write are prevented. ○Pull down resistance Rpd of CS pin To prevent mistake in operation and mistake write at power ON/OFF, CS pull down resistance is necessary. Select an appropriate value to this resistance value from microcontroller VOH, IOH, and VIL characteristics of this IC. Rpd ≧ Microcontroller EEPROM VOHM “H” output VOHM ≧ Rpd ・・・① IOHM VIHE ・・・② Example) When VCC =5V, VIHE=2V, VOHM=2.4V, IOHM=2mA, from the equation ①, VIHE IOHM VOHM Rpd ≧ “L” input ∴ Rpd ≧ 2.4 2×10 -3 1.2 [kΩ] With the value of Rpd to satisfy the above equation, VOHM becomes 2.4V or higher, and VIHE (=2.0V), the equation ② is also satisfied. Figure 42. CS pull down resistance ・VIHE : EEPROM VIH specifications ・VOHM : Microcontroller VOH specifications ・IOHM : Microcontroller IOH specifications 4-2) DO is available in both pull up and pull down. Do output become “High-Z” in other READY / BUSY output timing than after data output at read command and write command. When malfunction occurs at “High-Z” input of the microcontroller port connected to DO, it is necessary to pull down and pull up DO. When there is no influence upon the microcontroller actions, DO may be OPEN. If DO is OPEN, and at timing to output status READY, at timing of CS=“H”, SK=“H”, DI=“H”, EEPROM recognizes this as a start bit, resets READY output, and DO=”High-Z”, therefore, READY signal cannot be detected. To avoid such output, pull up DO pin for improvement. CS CS “H” SK SK Enlarged DI D0 DI High-Z READY DO BUSY DO BUSY High-Z CS=SK=DI=”H” When DO=OPEN Improvement by DO pull up DO READY BUSY CS=SK=DI=”H” When DO=pull up Figure 43. READY output timing at DO=OPEN www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 15/22 TSZ02201-0R2R0G100440-1-2 3.SEP.2012 Rev.001 Datasheet BU9891GUL-W (4Kbit) ○Pull up resistance Rpu and pull down resistance Rpd of DO pin As for pull up and pull down resistance value, select an appropriate value to this resistance value from microcontroller VIH, VIL, and VOH, IOH, VOL, IOL characteristics of this IC. Microcontroller Rpu ≧ EEPROM Rpu VILM VOLE ≦ IOLE “L” input “L” output : EEPROM VOL specifications : EEPROM IOL specifications : Microcontroller VIL specifications VOHE Rpd ≧ ・・・⑤ IOHE VOHE ≧ ・・・⑥ VIHM Example) When VCC =5V, VOHE=Vcc－0.2V, IOHE=0.1mA, VIHM=Vcc×0.7V from the equation ⑤, 5－0.2 Rpd ≧ -3 0.1×10 ∴ Rpd ≧ 48 [kΩ] VIHM VOHE IOHE ・・・④ ・VOLE ・IOLE ・VILM EEPROM Rpd ・・・③ With the value of Rpu to satisfy the above equation, VOLE becomes 0.4V or below, and with VILM(=0.8V), the equation ④ is also satisfied. Figure 44. DO pull up resistance “H” input IOLE VILM Example) When VCC =5V, VOLE=0.4V, IOLE=2.1mA, VILM=0.8V, from the equation ③, 5－0.4 Rpu ≧ -3 2.1×10 ∴ Rpu ≧ 2.2 [kΩ] VOLE Microcontroller Vcc－VOLE “H” output With the value of Rpd to satisfy the above equation, VOHE becomes 2.4V or below, and with VIHM (=3.5V), the equation ⑥ is also satisfied. ・VOHE : EEPROM VOH specifications ・IOHE : EEPROM IOH specifications ・VIHM : Microcontroller VIH specifications Figure 45. DO pull down resistance 5) READY / BUSY status display (DO terminal) This display outputs the internal status signal. When CS is started after tCS (Min.200ns) from CS fall after write command input, “H” or “L” is output. R/B display=“L” (BUSY) = write under execution After the timer circuit in the IC works and creates the period of tE/W, this time circuit completes automatically. (DO status) And write to the memory cell is made in the period of tE/W, and during this period, other command is not accepted. R/B display = “H” (READY) = command wait status (DO status) Even after tE/W (max.5ms) from write of the memory cell, the following command is accepted. Therefore, CS=“H” in the period of tE/W, and when input is in SK, DI, malfunction may occur, therefore, DI=“L” in the area CS=“H”. (Especially, in the case of shared input port, attention is required.) *Do not input any command while status signal is output. Command input in BUSY area is cancelled, but command input in READY area is accepted. Therefore, status READY output is cancelled, and malfunction and mistake write may be made. STATUS CS SK CLOCK DI WRITE INSTRUCTION DO High-Z tSV READY BUSY Figure 46. R/B status output timing chart www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 16/22 TSZ02201-0R2R0G100440-1-2 3.SEP.2012 Rev.001 Datasheet BU9891GUL-W (4Kbit) 6) When to directly connect DI and DO This IC has independent input terminal DI and output terminal DO, and separate signals are handled on timing chart, meanwhile, by inserting a resistance R between these DI and DO terminals, it is possible to carry out control by 1 control line. Microcontroller EEPROM DI/O PORT DI R DO Figure 47. DI, DO control line common connection ○Data collision of microcontroller DI/O output and DO output and feedback of DO output to DI input. Drive from the microcontroller DI/O output to DI input on I/O timing, and signal output from DO output occur at the same time in the following points. (1) 1 clock cycle to take in A0 address data at read command Dummy bit “0” is output to DO terminal. →When address data A0 = “1” input, through current route occurs. EEPROM CS input “H” EEPROM SK input A1 EEPROM DI input A0 Collision of DI input and DO output EEPROM DO output Microcontroller DI/O port D15 D14 D13 0 High-Z A1 A0 Microcontroller output High-Z Microcontroller input Figure 48. Collision timing at read data output at DI, DO direct connection (2) Timing of CS = “H” after write command. DO terminal in READY / BUSY function output. When the next start bit input is recognized, “HIGH-Z” gets in. →Especially, at command input after write, when CS input is started with microcontroller DI/O output “L”, READY output “H” is output from DO terminal, and through current route occurs. Feedback input at timing of these (1) and (2) does not cause disorder in basic operations, if resistance R is inserted. ～ ～ EEPROM SK input Write command EEPROM DI input Write command EEPROM DO output Write command ～ ～ Write command ～ ～ EEPROM CS input ～ ～ ～ ～ ～ ～ READY ～ ～ ～ ～ BUSY High-Z READY Collision of DI input and DO output BUSY Microcontroller output Microcontroller input ～ ～ READY Write command ～ ～ Microcontroller DI/O port Microcontroller output Figure 49. Collision timing at DI, DO direct connection Note) As for the case (2), attention must be paid to the following. When status READY is output, DO and DI are shared, DI=”H” and the microcontroller DI/O=”High-Z” or the microcontroller DI/O=”H”,if SK clock is input, DO output is input to DI and is recognized as a start bit, and malfunction may occur. As a method to avoid malfunction, at status READY output, set SK=“L”, or start CS within 4 clocks after “H” of READY signal is output. Start bit CS Because DI=”H”, set SK=”L” at CS rise. SK DI READY DO High-Z Figure 50. Start bit input timing at DI, DO direct connection www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 17/22 TSZ02201-0R2R0G100440-1-2 3.SEP.2012 Rev.001 Datasheet BU9891GUL-W (4Kbit) ○Selection of resistance value R The resistance R becomes through current limit resistance at data collision. When through current flows, noises of power source line and instantaneous stop of power source may occur. When allowable through current is defined as I, the following relation should be satisfied. Determine allowable current amount in consideration of impedance and so forth of power source line in set. And insert resistance R, and set the value R to satisfy EEPROM input level VIH/VIL even under influence of voltage decline owing to leak current and so forth. Insertion of R will not cause any influence upon basic operations. (1) Address data A0 = “1” input, dummy bit “0” output timing (When microcontroller DI/O output is “H”, EEPROM DO outputs “L”, and “H” is input to DI) ・Make the through current to EEPROM 10mA or below. ・See to it that the level VIH of EEPROM should satisfy the following. Microcontroller Conditions EEPROM VOHM ≦ VIHE DI/O PORT DI VOHM ≦ IOHM×R + VOLE At this moment, if VOLE=0V, VOHM “H” output VOHM ≦ IOHM×R R IOHM DO ∴ VOLE R ≧ ・VIHE ・VOLE ・VOHM ・IOHM “L” output Figure 51. Circuit at DI, DO direct connection (Microcontroller DI/O “H” output, EEPROM “L” output) VOHM IOHM ・・・⑦ : EEPROM VIH specifications : EEPROM VOL specifications : Microcontroller VOH specifications : Microcontroller IOH specifications (2) DO status READY output timing (When the microcontroller DI/O is “L”, EEPROM DO output “H”, and “L” is input to DI) ・Set the EEPROM input level VIL so as to satisfy the following. Conditions Microcontroller “L” output VOLM ≧ VILE EEPROM DI/O PORT VOLM ≧ VOHE – IOLM×R DI As this moment, VOHE=Vcc VOLM VOLM ≧ Vcc – IOLM×R R IOHM ∴ DO VOHE R ≧ ・VILE ・VOHE ・VOLM ・IOLM “H” output Vcc – VOLM IOLM ・・・⑧ : EEPROM VIL specifications : EEPROM VOH specifications : Microcontroller VOL specifications : Microcontroller IOL specifications Figure 52. Circuit at DI, DO direct connection (Microcontroller DI/O “L” output, EEPROM “H” output) Example) When Vcc=5V, VOHM=5V, IOHM=0.4mA, VOLM=5V, IOLM=0.4mA, From the equation ⑦, R ≧ From the equation⑧, VOHM R ≧ IOHM R ≧ IOLM 5 R ≧ -3 0.4×10 ∴ R ≧ Vcc – VOLM 12.5 [kΩ] 5 – 0.4 -3 2.1×10 ・・・⑨ ∴ R ≧ 2.2 [kΩ] ・・・⑩ Therefore, from the equations ⑨ and ⑩, ∴ www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 18/22 R ≧ 12.5 [kΩ] TSZ02201-0R2R0G100440-1-2 3.SEP.2012 Rev.001 Datasheet BU9891GUL-W (4Kbit) 7) Notes on power ON/OFF ・At power ON/OFF, set CS “L”. When CS is “H”, this IC gets in input accept status (active). If power is turned on in this status, noises and the likes may cause malfunction, mistake write or so. To prevent these, at power ON, set CS “L”. (When CS is in “L” status, all inputs are cancelled.) And at power decline, owing to power line capacity and so forth, low power status may continue long. At this case too, owing to the same reason, malfunction, mistake write may occur, therefore, at power OFF too, set CS “L”. VCC VCC VCC VCC GND VVCC CC CS GND Bad example Good example Figure 53. Timing at power ON/OFF (Bad example)CS pin is pulled up to Vcc. (Good example)It is “L” at power ON/OFF. In this case, CS becomes “H” (active status), and EEPROM may have malfunction, mistake write owing to noise and the likes. Even when CS input is High-Z, the status becomes like this case, which please note. Set 10ms or higher to recharge at power OFF. When power is turned on without observing this condition, IC internal circuit may not be reset, which please note. ○POR citcuit This IC has a POR (Power On Reset) circuit as a mistake write countermeasure. After POR action, it gets in write disable status. The POR circuit is valid only when power is ON, and does not work when power is OFF. However, if CS is “H” at power ON/OFF, it may become write enable status owing to noises and the likes. For secure actions, observe the follwing conditions. 1. Set CS=”L” 2. Turn on power so as to satisfy the recommended conditions of tR, tOFF, Vbot for POR circuit action. tR VCC Recommended conditions of tR, tOFF, Vbot tOFF Vbot tR t OFF V bot 10ms or below 10ms or higher 0.3V or below 100ms or below 10ms or higher 0.2V or below 0 Figure 54. Rise waveform diagram ○LVCC circuit LVCC (VCC-Lockout) circuit prevents data rewrite action at low power, and prevents wrong write. At LVCC voltage (Typ.=1.2V) or below, it prevent data rewrite. 8) Noise countermeasures ○VCC noise (bypass capacitor) When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is recommended to attach a by pass capacitor (0.1µF) between IC VCC and GND, At that moment, attach it as close to IC as possible.And, it is also recommended to attach a bypass capacitor between board VCC and GND. ○SK noise When the rise time (tR) of SK is long, and a certain degree or more of noise exists, malfunction may occur owing to clock bit displacement. To avoid this, a Schmitt trigger circuit is built in SK input. The hysteresis width of this circuit is set about 0.2V, if noises exist at SK input, set the noise amplitude 0.2Vp-p or below. And it is recommended to set the rise time (tR) of SK 100ns or below. In the case when the rise time is 100ns or higher, take sufficient noise countermeasures. Make the clock rise, fall time as small as possible. www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 19/22 TSZ02201-0R2R0G100440-1-2 3.SEP.2012 Rev.001 Datasheet BU9891GUL-W (4Kbit) ●Notes for use (1) Described numeric values and data are design representative values, and the values are not guaranteed. (2) We believe that application circuit examples are recommendable, however, in actual use, confirm characteristics further sufficiently. In the case of use by changing the fixed number of external parts, make your decision with sufficient margin in consideration of static characteristics and transition characteristics and fluctuations of external parts and our LSI. (3) Absolute Maximum Ratings If the absolute maximum ratings such as impressed voltage and action temperature range and so forth are exceeded, LSI may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that conditions exceeding the absolute maximum ratings should not be impressed to LSI. (4) GND electric potential Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltage is not lower than that of GND terminal in consideration of transition status. (5) Heat design In consideration of allowable loss in actual use condition, carry out heat design with sufficient margin. (6) Terminal to terminal shortcircuit and wrong packaging When to package LSI onto a board, pay sufficient attention to LSI direction and displacement. Wrong packaging may destruct LSI. And in the case of shortcircuit between LSI terminals and terminals and power source, terminal and GND owing to foreign matter, LSI may be destructed. (7) Use in a strong electromagnetic field may cause malfunction, therefore, evaluate design sufficiently Status of this document The Japanese version of this document is formal specification. A customer may use this translation version only for a reference to help reading the formal version. If there are any differences in translation version of this document formal version takes priority. www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 20/22 TSZ02201-0R2R0G100440-1-2 3.SEP.2012 Rev.001 Datasheet BU9891GUL-W (4Kbit) ●Ordering Information B U 9 8 9 1 G U L - W E2 Package Part Number Packaging and forming specification E2: Embossed tape and reel GUL: VCSP50L1(BU9891GUL-W) ●Physical Dimension Tape and Reel Information 0.1±0.05 1PIN MARK 1.60±0.05 0.55MAX 1.00±0.05 VCSP50L1 (BU9891GUL-W) VCSP50L1 (BU9891GUL-W) 6-φ0.25±0.05 0.05 A B A B B A 1 0.3±0.05 2 0.5 0.06 S (φ0.15)INDEX POST 0.25±0.05 S 3 P=0.5×2 (Unit : mm) <Tape and Reel information> Tape Embossed carrier tape Quantity 3000pcs E2 Direction of feed The direction is the 1pin of product is at the upper left when you hold ( reel on the left hand and you pull out the tape on the right hand Direction of feed 1pin Reel ) ∗ Order quantity needs to be multiple of the minimum quantity. ●Marking Diagram VCSP50L1(BU9891GUL-W) (TOP VIEW) 1PIN MARK Part Number Marking U 9 1 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 LOT Number 21/22 TSZ02201-0R2R0G100440-1-2 3.SEP.2012 Rev.001 Datasheet BU9891GUL-W (4Kbit) ●Revision History Date 3.Sep.2012 Revision 001 Changes New Release www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 22/22 TSZ02201-0R2R0G100440-1-2 3.SEP.2012 Rev.001 Datasheet Notice Precaution on using ROHM Products 1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment, OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you (Note 1) , transport intend to use our Products in devices requiring extremely high reliability (such as medical equipment equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASSⅢ CLASSⅡb CLASSⅢ CLASSⅢ CLASSⅣ CLASSⅢ 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. Our Products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] Use of the Products in places subject to dew condensation 4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual ambient temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability. 2. In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the ROHM representative in advance. For details, please refer to ROHM Mounting specification Notice - GE © 2014 ROHM Co., Ltd. All rights reserved. Rev.002 Datasheet Precautions Regarding Application Examples and External Circuits 1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the characteristics of the Products and external components, including transient characteristics, as well as static characteristics. 2. You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. Precaution for Electrostatic This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control). Precaution for Storage / Transportation 1. Product performance and soldered connections may deteriorate if the Products are stored in the places where: [a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic 2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period. 3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of which storage time is exceeding the recommended storage time period. Precaution for Product Label QR code printed on ROHM Products label is for ROHM’s internal use only. Precaution for Disposition When disposing Products please dispose them properly using an authorized industry waste company. Precaution for Foreign Exchange and Foreign Trade act Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act, please consult with ROHM representative in case of export. Precaution Regarding Intellectual Property Rights 1. All information and data including but not limited to application example contained in this document is for reference only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable for infringement of any intellectual property rights or other damages arising from use of such information or data.: 2. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any third parties with respect to the information contained in this document. Other Precaution 1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM. 2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of ROHM. 3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the Products or this document for any military purposes, including but not limited to, the development of mass-destruction weapons. 4. The proper names of companies or products described in this document are trademarks or registered trademarks of ROHM, its affiliated companies or third parties. Notice - GE © 2014 ROHM Co., Ltd. All rights reserved. Rev.002 Datasheet General Precaution 1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents. ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny ROHM’s Products against warning, caution or note contained in this document. 2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s representative. 3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. Notice – WE © 2014 ROHM Co., Ltd. All rights reserved. Rev.001