Datasheet Serial EEPROM Series Standard EEPROM Plug & Play EEPROM BR34E02-3 General Description BR34E02-3 is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect) Packages W(Typ) x D(Typ) x H(Max) Features 256×8 bit Architecture Serial EEPROM Wide Operating Voltage Range: 1.7V to 5.5V Two-Wire Serial Interface Self-Timed Erase and Write Cycle Page Write Function (16byte) Write Protect Mode ¾ Settable Reversible Write Protect Function : 00h-7Fh ¾ Write Protect 1 (Onetime Rom) : 00h-7Fh ¾ Write Protect 2 (Hardwire WP PIN) : 00h-FFh Low Power consumption ¾ Write (at 1.7V) : 0.4mA (typ) ¾ Read (at 1.7V) : 0.1mA (typ) ¾ Standby (at 1.7V) : 0.1µA (typ) Prevention of Write Mistake ¾ Write Protect Feature (WP pin) ¾ Prevention of Write Mistake at Low Voltage High Reliability Fine Pattern CMOS Technology More than 1 million write cycles More than 40 years data retention Noise Reduction Filtered Inputs in SCL / SDA Initial delivery state FFh TSSOP-B8 3.00mm x 6.40mm x 1.20mm VSON008X2030 2.00mm x 3.00mm x 0.60mm Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Rating Unit Supply Voltage VCC -0.3 to +6.5 V Power Dissipation Pd 330 (TSSOP-B8) 300 (VSON008X2030) mW Storage Temperature Tstg -65 to +125 ℃ Operating Temperature Input Voltage / Output Voltage (A0) Input Voltage / Output Voltage (others) Topr -40 to +85 ℃ - -0.3 to 10.0 V - -0.3 to VCC+1.0 V Remark Derate by 3.3mW/°C when operating above Ta=25°C Derate by 3.0mW/°C when operating above Ta=25°C Memory Cell Characteristics (Ta=25℃, VCC=1.7V to 5.5V) Parameter Write / Erase Cycle (1) (1) Data Retention Limit Unit Min Typ Max 1,000,000 - - Times 40 - - Years (1) Not 100% TESTED ○Product structure:Silicon monolithic integrated circuit www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 ○This product has no designed protection against radioactive rays 1/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 Recommended Operating Ratings Parameter Symbol Rating Unit Supply Voltage VCC 1.7 to 5.5 V Input Voltage VIN 0 to VCC V DC Characteristics (Unless otherwise specified Ta=-40℃ to +85℃, VCC =1.7V to 5.5V) Parameter Symbol Limit Min Typ Max Unit Input High Voltage VIH 0.7 VCC - Vcc+1.0 V Input Low Voltage VIL -0.3 - 0.3 VCC V Output Low Voltage 1 VOL1 - - 0.4 V Output Low Voltage 2 Test Conditions IOL=2.1mA, 2.5V≦VCC≦5.5V(SDA) VOL2 - - 0.2 V IOL=0.7mA, 1.7V≦VCC<2.5V(SDA) Input Leakage Current 1 ILI1 -1 - 1 µA VIN=0V to VCC (A0, A1, A2, SCL) Input Leakage Current 2 ILI2 -1 - 15 µA VIN=0V to VCC (WP) Input Leakage Current 3 ILI3 -1 - 20 µA VIN=VHV(A0) Output Leakage Current ILO -1 - 1 µA Supply Current (Write) ICC1 - - 2.0 mA Supply Current (Read) ICC2 - - 0.5 mA Standby Current ISB - - 2.0 µA A0 HV Voltage VHV 7 - 10 V VOUT=0V to VCC VCC =5.5V, fSCL=400kHz, tWR=5ms Byte Write Page Write Write Protect VCC =5.5V, fSCL=400kHz Random Read Current Read Sequential Read VCC =5.5V, SDA, SCL= VCC A0, A1, A2=GND, WP=GND VHV-VCC≧4.8V AC Characteristics (Unless otherwise specified Ta=-40℃ to +85℃, VCC =1.7V to 5.5V) Parameter Symbol Limit Min Typ Max Unit Clock Frequency fSCL - - 400 kHz Data Clock High Period tHIGH 0.6 - - µs tLOW 1.2 - - µs SDA and SCL Rise Time tR - - 0.3 µs SDA and SCL Fall Time(1) tF - - 0.3 µs Start Condition Hold Time tHD:STA 0.6 - - µs Start Condition Setup Time tSU:STA 0.6 - - µs Input Data Hold Time tHD:DAT 0 - - ns Input Data Setup Time tSU:DAT 100 - - ns Data Clock Low Period ( 1) Output Data Delay Time tPD 0.1 - 0.9 µs Output Data Hold Time tDH 0.1 - - µs tSU:STO 0.6 - - µs Bus Free Time tBUF 1.2 - - µs Write Cycle Time Noise Spike Width (SDA and SCL) WP Hold Time tWR - - 5 ms tI - - 0.1 µs tHD:WP 0 - - µs WP Setup Time tSU:WP 0.1 - - µs WP High Period tHIGH:WP 1.0 - - µs Stop Condition Setup Time (1) Not 100% TESTED www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 Serial Input / Output Timing tR tF tHIGH SCL SCL DATA(1) tSU:DAT tLOW tHD:STA tHD:DAT SDA (IN) SDA D1 DATA(n) D0 ACK ACK tWR WP tPD tBUF tDH SDA (OUT) STOP CONDITION tHD:WP tSU:WP Figure 1-(a). Serial Input / Output Timing Figure 1-(d). WP Timing of the Write Operation ○SDA data is latched into the chip at the rising edge of SCL clock. ○Output data toggles at the falling edge of SCL clock. SCL SCL DATA(1) SDA tSU:STA tHD:STA tSU:STO D1 SDA WP DATA(n) D0 ACK ACK tHIGH : WP tWR STOP BIT START BIT Figure 1-(b). Start/Stop Bit Timing Figure 1-(e). WP Timing of the Write Cancel Operation ○For WRITE operation, WP must be "Low" from the rising edge of the SCL clock (which takes in D0 of first byte) until the end of tWR. (See Figure 1-(d) ) During this period, WRITE operation can be canceled by setting WP "High".(See Figure 1-(e)) SDA D0 ACK WRITE DATA(n) tWR STOP CONDITION START CONDITION ○When WP is set to "High" during tWR, WRITE operation is immediately ceased, making the data unreliable. It must then be re-written. Figure 1-(c). Write Cycle Timing www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 3/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 Block Diagram PROTECT_MEMORY_ARRAY A0 1 VCC 8 VCC 2Kbit_MEMORY_ARRAY 8bit 8bit A1 2 ADDRESS DECODER 8bit SLAVE , WORD DATA ADDRESS REGISTE START A2 3 7 WP STOP 6 SCL CONTOROL LOGIC ACK GND 4 HIGH VOLTAGE 5 SDA VCC LEVEL DETECT Pin Configuration (TOP VIEW) A0 1 8 VCC A1 2 7 WP BR34E02-3 A2 3 6 SCL GND 4 5 SDA Pin Descriptions Pin Name Input/Output Descriptions VCC - Power supply Ground 0V GND - A0, A1, A2 IN Slave address set. SCL IN Serial clock input SDA IN / OUT WP IN (1) Slave and word address Serial data input, serial data output Write protect input(2) (1) Open drain output requires a pull-up resistor. (2) WP Pin has a Pull-Down resistor. Please leave unconnected or connect to GND when not in use. www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 Input Low Voltage: VIL(V) VIL(V) Input High Voltage: VIHVIH(V) (V) Typical Performance Curves Supply Voltage : VCC(V) Supply Voltage : VCC(V) Figure 3. Input Low Voltage vs Supply Voltage (A0, A1, A2, SCL, SDA, WP) Output Low Voltage2: VOL2(V) Output Low Voltage1: VOL1(V) Figure 2. Input High Voltage vs Supply Voltage (A0, A1, A2, SCL, SDA, WP) Output Low Current: IOL(mA) Output Low Current: IOL(mA) Figure 4. Output Low Voltage1 vs Output Low Current (Vcc=2.5V) www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5/30 Figure 5. Output Low Voltage2 vs Output Low Current (Vcc=1.7V) TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 Input LeakageCURRENT2 Current2: ILI2 INPUT LEAKAGE : (µA) ILI2(uA) ILI1(uA) INPUTInput LEAKAGE CURRENT1 : I(µA) LI1(uA) Leakage Current1: ILI1 Typical Performance Curves‐Continued Supply Voltage : VCC: (V) SUPPLY VOLTAGE Vcc(V) Figure 6. Input Leakage Current1 vs Supply Voltage (A0, A1, A2, SCL) Figure 7. Input Leakage Current2 vs Supply Voltage (WP) OUTPUT LEAKAGE CURRENT: ILO (uA) Output Leakage Current: ILO(µA) SUPPLY (WRITE): Icc1 SupplyCURRENT Current (WRITE): ICC1 (mA)(mA) Supply Voltage : VCC(V) Supply Voltage : VCC(V) Supply Voltage : VCC(V) Figure 8. Output Leakage Current vs Supply Voltage (SDA) Figure 9. Supply Current (WRITE) vs Supply Voltage (fSCL=400kHz) www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 6/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 Standby Current: ISB(µA) SUPPLY CURRENT (READ): Icc2 (mA) Supply Current (READ): ICC2 (mA) Typical Performance Curves‐Continued Supply Voltage : VCC(V) Supply Voltage : VCC(V) Figure 11. Standby Current vs Supply Voltage Clock Frequency: fSCL(KHz) DATA CLK H TIME : tHIGH Data Clock High Period: tHIGH(us) (µs) Figure 10. Supply Current (READ) vs Supply Voltage (fSCL=400kHz) Supply Voltage : VCC(V) Supply Voltage : VCC(V) Figure 12. Clock Frequency vs Supply Voltage www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Figure 13. Data Clock High Period vs Supply Voltage 7/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 Data Clock Low Period: tLOW(µs) Start Condition Hold Time: tHD:STA(µs) Typical Performance Curves‐Continued Supply Voltage : VCC(V) Supply Voltage : VCC(V) Input Data Hold Time: tHD:DAT(ns) Figure 15. Start Condition Hold Time vs Supply Voltage Supply Voltage : VCC(V) Supply Voltage : VCC(V) Figure 16. Start Condition Setup Time vs Supply Voltage www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 INPUT DATA HOLD TIME : tHD:DAT (ns) START CONDITION UP TIME : tSU:STA Start SET Condition Setup Time: (us) tSU:STA(µs) Figure 14. Data Clock Low Period vs Supply Voltage 8/30 Figure 17. Input Data Hold Time vs Supply Voltage (HIGH) TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 Input Data Hold Time: tHD:DAT(ns) Input Data Setup Time: tSU:DAT(ns) Typical Performance Curves‐Continued Supply Voltage : VCC(V) Supply Voltage : VCC(V) Figure 18. Input Data Hold Time vs Supply Voltage (LOW) Input Data Setup Time: tSU:DAT(ns) Low Output Data Delay Time: tPD(µs) Figure 19. Input Data Setup Time vs Supply Voltage (HIGH) Supply Voltage : VCC(V) Supply Voltage : VCC(V) Figure 20. Input Data Setup Time vs Supply Voltage (LOW) www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Figure 21. Low Output Data Delay Time vs Supply Voltage 9/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 High Output Data Delay Time: tPD(µs) Stop Condition Setup Time: tSU:STO (µs) (us) STOP CONDITION SETUP TIME : tSU:STO Typical Performance Curves‐Continued Supply Voltage : VCC(V) Supply Voltage : VCC(V) Figure 22. High Output Data Delay Time vs Supply Voltage Bus Free Time: tBUF(µs) Write Cycle Time: tWR(ms) Figure 23. Stop Condition Setup Time vs Supply Voltage Supply Voltage : VCC(V) Supply Voltage : VCC(V) Figure 25. Write Cycle Time vs Supply Voltage Figure 24. Bus Free Time vs Supply Voltage www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 Noise Spike Width(SCL H): tl(µs) Noise Spike Width(SCL L): tl(µs) Typical Performance Curves‐Continued Supply Voltage : VCC(V) Supply Voltage : VCC(V) Figure 27. Noise Spike Width vs Supply Voltage (SCL L) Noise Spike Width(SDA H): tl(µs) NOISE REDUCTION Noise Spike Width(SDA L): tl(µs) EFFECTIVE TIME : Tl(SDA L)(us) Figure 26. Noise Spike Width vs Supply Voltage (SCL H) Supply Voltage : VCC(V) Supply Voltage : VCC(V) Figure 28. Noise Spike Width vs Supply Voltage (SDA H) www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 11/30 Figure 29. Noise Spike Width vs Supply Voltage (SDA L) TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 WP Hold Time: tHD:WP(µs) WP Setup Time: tSU:WP(µs) WP SETUP TIME : tSU:WP (us) Typical Performance Curves‐Continued Supply Voltage : VCC(V) Supply Voltage : VCC(V) Figure 30. WP Hold Time vs Supply Voltage WP High Period: tHIGH:WP(µs) Figure 31. WP Setup Time vs Supply Voltage Supply Voltage : VCC(V) Figure 32. WP High Period vs Supply Voltage www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 12/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 Timing Chart 1. I2C BUS Data Communication I2C BUS data communication starts by start condition input, and ends by stop condition input. Data is always 8bit long, 2 and acknowledge is always required after each byte. I C BUS data communication with several devices is possible by connecting with 2 communication lines: serial data (SDA) and serial clock (SCL). Among the devices, there should be a “master” that generates clock and control communication start and end. The rest become “slave” which are controlled by an address peculiar to each device, like this EEPROM. The device that outputs data to the bus during data communication is called “transmitter”, and the device that receives data is called “receiver”. 2. START Condition (START bit Recognition) (1) Before executing each command, start condition (start bit) where SDA goes from 'HIGH' down to 'LOW' when SCL is ‘HIGH' is necessary. (2) This IC always detects whether SDA and SCL are in start condition (start bit) or not, therefore, unless this condition is satisfied, any command cannot be executed. 3. STOP Condition (STOP bit Recognition) (1) Each command can be ended by a stop condition (stop bit) where SDA goes from 'LOW' to 'HIGH' while SCL is 'HIGH'. (See Figure 1-(b) START/STOP Bit Timing) 4. Write Protect By Soft Ware (1) Set Write Protect command and permanent set Write Protect command set data of 00h to 7Fh in 256 words write protection block. Clear Write Protect command can cancel write protection block which is set by set write Protect command. Cancel of write protection block which is set by permanent set Write Protect command at once is impossibility. When these commands are carried out, WP pin must be OPEN or GND. 5. Acknowledge (1) Acknowledge is a software used to indicate successful data transfers. The Transmitter device will release the BUS after transmitting eight bits. When inputting the slave address during write or read operation, the Transmitter is the µ-COM. When outputting the data during read operation, the Transmitter is the EEPROM. (2) During the ninth clock cycle the Receiver will pull the SDA line Low to verify that the eight bits of data have been received. (When inputting the slave address during write or read operation, EEPROM is the receiver. When outputting the data during read operation the receiver is the µ-COM.) (3) The device will respond with an Acknowledge after recognition of a START condition and its slave address (8bit). (4) In WRITE mode, the device will respond with an Acknowledge after the receipt of each subsequent 8-bit word (word address and write data). (5) In READ mode, the device will transmit eight bits of data, release the SDA line, and monitor the line for an Acknowledge. (6) If an Acknowledge is detected and no STOP condition is generated by the Master, the device will continue to transmit the data. If an Acknowledge is not detected, the device will terminate further data transmissions and await a STOP condition before returning to standby mode. 6. Device Addressing Following a START condition, the Master outputs the Slave address to be accessed. The most significant four bits of the slave address are the “device type indentifier.” For this EEPROM it is “1010.” (For WP register access this code is "0110".) The next three bits identify the specified device on the BUS (device address). The device address is defined by the state of the A0,A1 and A2 input pins. This IC works only when the device address input from the SDA pin corresponds to the status of the A0,A1 and A2 input pins. Using this address scheme allows up to eight devices to be connected to the BUS. The last bit of the stream (R/W…READ/WRITE) determines the operation to be performed. R/W=0 R/W=1 ・・・・ ・・・・ www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 WRITE (including word address input of Random Read) READ 13/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 Slave Address Set Pin A2 A1 A0 A2 A1 A0 GND GND VHV GND VCC VHV Device Type Device Address 1010 Read Write Mode Access Area A2 A1 A0 R/W 2kbit Access to Memory A2 A1 A0 R/W Access to Permanent Set Write Protect Memory 0 0 1 R/W Access to Set Write Protect Memroy 0 1 1 R/W Access to Clear Write Protect Memory 0110 7. Write Protect Pin (WP) When WP pin set to Vcc (H level), write protect is set for 256 words (all address). When WP pin set to GND (L level), it is enable to write 256 words (all address). If permanent protection is done by Write Protect command, lower half area (00 to 7Fh address) is inhibited writing regardless of WP pin state. WP pin has a Pull-Down resistor. Please be left unconnected or connect to GND when WP feature is not in use. 8. Confirm Write Protect Resistor by ACK According to state of Write Protect Resistor, ACK is as follows. State of Write Protect Register WP Input In case, protect by PSWP - 0 In case,protect by SWP Input Command ACK Address ACK Data ACK Write Cycle(tWR) PSWP,SWP,CWP Page or Byte Write (00 to 7Fh) SWP No ACK - No ACK - No ACK No ACK WA7 to WA0 ACK D7 to D0 No ACK No No ACK - No ACK - No ACK No CWP ACK - ACK - ACK Yes PSWP Page or Byte Write (00 to 7Fh) SWP ACK - ACK - ACK Yes ACK WA7 to WA0 ACK D7 to D0 No ACK No No ACK - No ACK - No ACK No CSP ACK - ACK - No ACK No PSWP ACK - ACK - No ACK No Page or Byte Write ACK WA7 to WA0 ACK D7 to D0 No ACK No PSWP, SWP, CWP ACK - ACK - ACK Yes Page or Byte Write ACK WA7 to WA0 ACK D7 to D0 ACK Yes PSWP, SWP, CWP ACK - ACK - No ACK No Page or Byte Write ACK WA7 to WA0 ACK D7 to D0 No ACK No 1 0 In case, Not protect 1 Acknowledge when writing data or defining the write-protection (instructions with R/W bit=0) - is Don’t Care State of Write Protect Register In case, protect by PSWP In case, protect by SWP Case, Not protect Command ACK Address ACK Data ACK PSWP, SWP, CWP No ACK - No ACK - No ACK SWP No ACK - No ACK - No ACK CWP ACK - No ACK - No ACK PSWP ACK - No ACK - No ACK PSWP, SWP, CWP ACK - No ACK - No ACK Acknowledge when reading data the write-protection (instructions with R/W bit=1) www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 14/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 Command 1. Write Cycle During WRITE CYCLE operation data is written in the EEPROM. The Byte Write Cycle is used to write only one byte. In the case of writing continuous data consisting of more than one byte, Page Write is used. The maximum bytes that can be written at one time is 16 bytes. S T A R T SDA LINE W R I T E SLAVE ADDRESS WORD ADDRESS WA 7 1 0 1 0 A2 A1 A0 S T O P DATA WA 0 D7 D0 A C K R A / C W K A C K Figure 33. Byte Write Cycle Timing S T A R T SDA L IN E S LA V E ADDRESS W R I T E W ORD A D D R E S S (n ) WA 7 1 0 1 0 A 2A 1A 0 R A / C W K D A TA (n) WA 0 D7 A C K S T O P D A TA (n + 1 5) D0 D0 A C K A C K Figure 34. Page Write Cycle Timing (1) With this command the data is programmed into the indicated word address. (2) When the Master generates a STOP condition, the device begins the internal write cycle to the nonvolatile memory array. (3) Once programming is started no commands are accepted for tWR (5ms max). (4) This device is capable of 16-byte Page Write operations. (5) If the Master transmits more than 16 words prior to generating the STOP condition, the address counter will “roll over” and the previously transmitted data will be overwritten. When two or more byte of data are input, the four low order address bits are internally incremented by one after the receipt of each word, while the four higher order bits of the address (WA7 to WA4) remain constant. www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 15/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 2. Read Cycle During Read Cycle operation data is read from the EEPROM. The Read Cycle is composed of Random Read Cycle and Current Read Cycle. The Random Read Cycle reads the data in the indicated address. The Current Read Cycle reads the data in the internally indicated address and verifies the data immediately after the Write Operation. The Sequential Read operation can be performed with both Current Read and Random Read. With the Sequential Read Cycle it is possible to continuously read the next data. S T A R T SDA L IN E W R I T E SLAVE ADDRESS W ORD A D D R E S S (n ) WA 7 1 0 1 0 A 2 A 1A 0 S T A R T WA 0 R A / C W K It is necessary to input “High” at last ACK timing. SLAVE ADDRESS R E A D S T O P D A TA (n) 1 0 1 0 A 2 A 1A 0 D0 D7 A C K R A / C W K A C K Figure 35. Random Read Cycle Timing S T A R T SDA LINE SLAVE ADDRESS R E A D 1 0 1 0 A2 A1 A0 S T O P DATA D7 It is necessary to input “High” at last ACK timing. D0 A C K R A / C W K Figure 36. Current Read Cycle Timing (1) Random Read operation allows the Master to access any memory location indicated by word address. (2) In cases where the previous operation is Random or Current Read (which includes Sequential Read), the internal address counter is increased by one from the last accessed address (n). Thus Current Read outputs the data of the next word address (n+1). (3) If an Acknowledge is detected and no STOP condition is generated by the Master (µ-COM), the device will continue to transmit data. (It can transmit all data (2kbit 256word)) (4) If an Acknowledge is not detected, the device will terminate further data transmissions and await a STOP condition before returning to standby mode. (5) If an Acknowledge is detected with the "Low" level (not "High" level), the command will become Sequential Read, and the next data will be transmitted. Therefore, the Read command is not terminated. In order to terminate Read input Acknowledge with "High" always, then input a STOP condition. S T A R T SDA L IN E SLAVE ADDRESS R E A D 1 0 1 0 A 2A 1A 0 D A T A (n ) D7 R A / C W K S T O P D A T A (n + x) D0 D7 A C K A C K It is necessary to input “High” at last ACK timing. D0 A C K Figure 37. Sequential Read Cycle Timing(With Current Read) www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 16/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 3. Write Protect Cycle S T A R T SDA L IN E SLAVE ADDRESS W R I T E W ORD ADDRESS 0 1 1 0 A 2A 1A 0 * D ATA * R A / C W K WP S T O P * * A C K A C K *:D O N ’T C A R E Figure 38. Permanent Set Write Protect Cycle (1) Permanent Set Write Protect Cycle (a) Permanent set Write Protect command set data of 00h to 7Fh in 256 words write protection block. Cancel of write protection block which is set by permanent set Write Protect command at once is impossibility. When these commands are carried out, WP pin must be OPEN or GND. (b) Permanent Set Write Protect command needs tWR from stop condition same as Byte Write and Page Write, during tWR, input command is canceled. (c) Refer to Page14 about reply of ACK in each protect state. S T A R T SDA L IN E SLAVE ADDRESS W R I T E 0 1 1 0 0 0 1 W ORD ADDRESS * D ATA * R A / C W K WP S T O P * A C K * A C K *:D O N ’T C A R E Figure 39. Set Write Protect Cycle (2) Set Write Protect Cycle (a) Set Write Protect command set data of 00h to 7Fh in 256 words write protection block. Clear Write Protect command can cancel write protection block which is set by set write Protect command. When these commands are carried out, WP pin must be OPEN or GND. (b) Set write Protect command needs tWR from stop condition same as Byte Write and Page Write, during tWR, input command is canceled. (c) Refer to Page14 about reply of ACK in each protect state. www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 17/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 S T A R T SDA L IN E W R I T E SLAVE ADDRESS 0 1 1 0 0 1 1 W ORD ADDRESS * D ATA * * R A / C W K WP S T O P * A C K A C K *:D O N ’T C A R E Figure 40. Clear Write Protect Cycle (3) Clear Write Protect Cycle (a) Clear Write Protect command can cancel write protection block which is set by set write Protect command. When these commands are carried out, WP pin must be OPEN or GND. (b) Clear Write Protect command needs tWR from stop condition same as Byte Write and Page Write, during tWR, input command is canceled. (c) Refer to Page14 about reply of ACK in each protect state. Software Reset Software reset is executed to avoid malfunction after power on and during command input. Software reset has several kinds and 3 kinds of them are shown in the figure below. (Refer to Figure 41.-(a), Figure 41.-(b), and Figure 41.-(c).) Within the dummy clock input area, the SDA bus is released ('H' by pull up) and ACK output and read data '0' (both 'L' level) may be output from EEPROM. Therefore, if 'H' is input forcibly, output may conflict and over current may flow, leading to instantaneous power failure of system power source or influence upon devices. DUMMY CLOCK x 14 SCL 1 2 13 START x 2 14 COMMAND SDA SD COMMAND Figure 41-(a). DUMMY CLOCK x 14 + START + START SCL START DUMMY CLOCK x 9 START 1 2 8 9 COMMAND SDA SD COMMAND Figure 41-(b). START + DUMMY CLOCK x 9 + START START x 9 タ SCL 1 2 3 ト 7 8 9 SDA SD COMMAND COMMAND Figure 41-(c). START x 9 * COMMAND starts with start condition. www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 18/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 Acknowledge Polling During internal write execution, all input commands are ignored, therefore ACK is not returned. During internal automatic write execution after write cycle input, next command (slave address) is sent. If the first ACK signal sends back 'L', then it means end of write operation, else 'H' is returned, which means writing is still in progress. By the use of acknowledge polling, next command can be executed without waiting for tWR = 5ms. To write continuously, R / W = 0, then to carry out current read cycle after write, slave address with R / W = 1 is sent. If ACK signal sends back 'L', and then execute word address input and data output and so forth. During internal write, ACK = HIGH is returned. THE FIRST WRITE COMMAND S T A R T WRITE COMMAND S T A R T S T O P S T A R T A C K H SLAVE ADDRESS SLAVE ADDRESS A C K H ・・・ tWR THE SECOND WRITE COMMAND ・・・ S T A R T SLAVE ADDRESS A C K H S T A R T SLAVE ADDRESS A C K L WORD ADDRESS A C K L A C K L DATA S T O P tWR After completion of internal write, ACK=LOW is returned, so input next word address and data in succession. Figure 42. Case of Continuous Write by Acknowledge Polling WP Effective Timing WP is usually fixed to 'H' or 'L', but when WP is used to cancel write cycle and so on, observe the following WP valid timing. During write cycle execution, inside cancel valid area, by setting WP='H', write cycle can be cancelled. In both byte write cycle and page write cycle, the area from the first start condition of command to the rise of clock to take in D0 of data(in page write cycle, the first byte data) is the cancel invalid area. WP input in this area becomes ‘Don't care’. The area from the rise of SCL to take in D0 to the stop condition input is the cancel valid area. Furthermore, after the execution of forced end by WP, the IC enters standby status.. ・The rising edge of the clock which take in D0 SCL ・The rising edge ・of SDA SCL SDA SDA SDA D0 D1 D0 ACK AN ENLARGEMENT S A T SLAVE C WORD A K R ADDRESS L ADDRESS T ACK AN ENLARGEMENT A A C D7 D6 D5 D4 D3 D2 D1 D0 C K K L L DATA WP cancellation WP cancellation invalid period effective period WP A C K L S T O P tWR Stop of the write operation Data is not No data will be written guaranteed Figure 43. WP Effective Timing www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 19/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 Command Cancellation from the START and STOP Conditions During command input, by continuously inputting start condition and stop condition, command can be cancelled. (Figure 44.) However, within ACK output area and during data read, SDA bus may output 'L'. In this case, start condition and stop condition cannot be input, so reset is not available. Therefore, execute software reset. When command is cancelled by start-stop condition during random read cycle, sequential read cycle, or current read cycle, internal setting address is not determined. Therefore, it is not possible to carry out current read cycle in succession. To carry out read cycle in succession, carry out random read cycle. SCL SDA 1 0 1 0 START CONDITION STOP CONDITION Figure 44. Command Cancellation by the START and STOP Conditions during Input of the Slave Address I/O Peripheral Circuit 1. Pull-Up Resistance of SDA Terminal SDA is NMOS open drain, so it requires a pull up resistor. As for this resistance value (RPU), select an appropriate value from microcontroller VIL, IL, and VOL-IOL characteristics of this IC. If RPU is large, operating frequency is limited. The smaller the RPU, the larger is the supply current (Read). 2. Maximum RPU The maximum value of RPU is determined by the following factors. (1) SDA rise time to be determined by the capacitance (CBUS) of bus line and RPU of SDA should be tR or lower. Furthermore, AC timing should be satisfied even when SDA rise time is slow. (2) The bus. electric potential ○ A to be determined by the input current leak total (IL) of device connected to bus at output of 'H' to the SDA line and RPU should sufficiently secure the input 'H' level (VIH) of microcontroller and EEPROM including recommended noise margin of 0.2Vcc. VCC-ILRPU-0.2 VCC ≧ VIH ∴ RPU BR34E02 Microcontroller 0.8VCC-VIH ≦ IL RPU SDA PIN A Examples: When VCC =3V, IL=10µA, VIH=0.7 VCC According to (2) RPU ≦ IL IL 0.8×3-0.7×3 -6 10×10 THE CAPACITANCE ≦ 300 [kΩ] OF BUS LINE (CBUS) Figure 45. I/O Circuit www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 20/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 3. Minimum RPU The minimum value of RPU is determined by following factors. (1) Meets the condition that VOLMAX=0.4V, IOLMAX=3mA when the output is Low. VCC -VOL ≦ IOL R PU VCC -VOL IOL (2) VOLMAX=0.4V must be lower than the input Low level of the micro controller and the EEPROM including the recommended noise margin of 0.1VCC. RPU ≧ ∴ VOLMAX ≦ VIL-0.1 VCC Examples: VCC=3V, VOL=0.4V, IOL=3mA, the VIL of the micro controller and the EEPROM is VIL=0.3VCC, According to (1) RPU ≧ 3-0.4 3×10 -3 ≧ 867 [Ω] VOL=0.4 [V] VIL=0.3×3 =0.9 [V] so that condition (2) is met And And 4. Pull-up Resistance of SCL Terminal When SCL control is made at the CMOS output port, there is no need for a pull up resistor. But when there is a time where SCL becomes 'Hi-Z', add a pull up resistor. As for the pull up resistor value, one of several kΩ to several ten kΩ is recommended in consideration of drive performance of output port of microcontroller. A0, A1, A2, WP Pin Connections 1. Device Address Pin (A0, A1, A2) Connections The status of the device address pins is compared with the device address sent by the Master. One of the devices that are connected to the identical BUS is selected. Pull up or down these pins or connect them to VCC or GND. Pins that are not used as device address (N.C.Pins) may be High, Low, or Hi-Z. 2. WP Pin Connection The WP input allows or prohibits write operations. When WP is High, only Read is available and Write to all address is prohibited. Both Read and Write are available when WP is Low. In the event that the device is used as a ROM, it is recommended that the WP input be pulled up or connected to VCC. When both READ and WRITE are operated, the WP input must be pulled down or connected to GND or controlled. Microcontroller Connection 1. RS In I2C BUS, it is recommended that SDA port is of open drain input/output. However, when using CMOS input / output of tri state to SDA port, insert a series resistance RS between the pull up resistor Rpu and the SDA terminal of EEPROM. This is to control over current that may occur when PMOS of the microcontroller and NMOS of EEPROM are turned ON simultaneously. RS also plays the role of protecting the SDA terminal against surge. Therefore, even when SDA port is open drain input/output, RS can be used. ACK SCL RPU RS “H” OUTPUT OF MICROCONTROLLER SDA MICRO CONTROLLER EEPROM The “H” output of micro controller and the “L” output of EEPROM may cause current overload to SDA line. Figure 46. I/O Circuit www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 “L” OUTPUT OF EEPROM Figure 47. Input/Output Collision Timing 21/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 2. Maximum Value of RS The maximum value of RS is determined by the following relations. (1) SDA rise time to be determined by the capacitance (CBUS) of bus line and RPU of SDA should be tR or lower. Furthermore, AC timing should be satisfied even when SDA rise time is slow. (2) The bus’ electric potential ○ A to be determined by RPU and RS the moment when EEPROM outputs 'L' to SDA bus should sufficiently secure the input 'L' level (VIL) of microcontroller including recommended noise margin of 0.1Vcc. VC C RPU RS (V CC -V OL)×R S R PU +R S A V OL ∴ RS ≦ I OL BUS CAPACITANCE V IL MICRO CONTROLLER + V OL+0.1V CC ≦V IL V IL-V OL-0.1VCC 1.1VCC -VIL × R PU Examples: W hen V CC =3V, VIL=0.3V CC, V OL=0.4V, R PU =20k EEPROM According R S Figure 48. I/O Circuit ≦ 0.3×3-0.4-0.1×3 1.1×3-0.3×3 × 20×10 3 ≦ 1.67[kΩ] 3. Minimum Value of RS The minimum value of RS is determined by over current at bus collision. When over current flows, noises in power source line and instantaneous power failure of power source may occur. When allowable over current is defined as I, the following relation must be satisfied. Determine the allowable current in consideration of the impedance of power source line in set and so forth. Set the over current to EEPROM at 10mA or lower. Vcc RS ≦ ∴ RS ≧ RPU "L" OUTPUT I Vcc I Examples: When VCC=3V, I=10mA RS RS "H" OUTPUT MAXIMUM CURRENT MICRO CONTROLLER ≧ 3 10×10-3 ≧ 300 [Ω] EEPROM Figure 49. I/O Circuit www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 22/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 I/O Equivalence Circuit 1. Input (A0,A1,A2,SCL) Figure 50. Input Pin Circuit Diagram 2. Input (SDA) Figure 51. Input Pin Circuit Diagram 3. Input (WP) Figure 52. Input Pin Circuit Diagram www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 23/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 Power-Up/Down Conditions At power ON, the IC’s internal circuits may go through unstable low voltage area as the Vcc rises, making the IC’s internal logic circuit not completely reset, hence, malfunction may occur. To prevent this, the IC is equipped with POR circuit and LVCC circuit. To assure the operation, observe the following conditions at power ON. 1. 2. "SDA='H'" and "SCL='L' or 'H'". Follow the recommended conditions of tR, tOFF, Vbot so that P.O.R. will be activated during power up. tR VCC Recommended conditions of tR, tOFF, V bot tR tOFF Vbot Below 10ms Above 10ms Below 0.3V tOFF Vbot Below 100ms Above 10ms Below 0.2V 0 Figure 53.53. VccVCC Rising Waveform Figure rising wavefrom 3. Set SDA and SCL so as not to become "Hi-Z". When the above conditions 1 and 2 cannot be observed, take following countermeasures. (1) In the case when the above condition 1 cannot be observed such that SDA becomes ‘L’ at power ON. →Control SCL and SDA as shown below, to make SCL and SDA, ‘H’ and ‘H’. VCC tLOW SCL SDA After Vcc becomes stable After Vcc becomes stable tDH tSU:DAT tSU:DAT Figure 54. SCL="H" and SDA="L" Figure 55. SCL="L" and SDA="L" (2) In the case when the above condition 2 cannot be observed. →After the power source become stable, execute software reset.(Figure 41) (3) In the case when the above condition 1 and 2 cannot be observed. →Carry out (1), and then carry out (2). Low Voltage Malfunction Prevention Function LVCC circuit prevents data rewrite operation at low power, and prevents write error. At LVCC voltage (Typ =1.2V) or below, data rewrite is prevented. Noise Countermeasures 1. Bypass Capacitor When noise or surge gets in the power source line, malfunction may occur, therefore, it is recommended to connect a bypass capacitor (0.1µF) between IC Vcc and GND pins. Connect the capacitor as close to IC as possible. In addition, it is also recommended to connect a bypass capacitor between board’s Vcc and GND. www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 24/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 Operational Notes 1. Described numeric values and data are design representative values only, and the values are not guaranteed. 2. We believe that the application circuit examples in this document are recommendable. However, in actual use, confirm characteristics further sufficiently. If changing the fixed number of external parts is desired, make your decision with sufficient margin in consideration of static characteristics, transient characteristics, and fluctuations of external parts and our LSI. 3. Absolute maximum ratings If the absolute maximum ratings such as supply voltage, operating temperature range, and so on are exceeded, LSI may be destroyed. Do not supply voltage or subject the IC to temperatures exceeding the absolute maximum ratings. In the case of fear of exceeding the absolute maximum ratings, take physical safety countermeasures such as adding fuses, and see to it that conditions exceeding the absolute maximum ratings should not be supplied to the LSI. 4. GND electric potential Set the voltage of GND terminal lowest at any operating condition. Make sure that each terminal voltage is not lower than that of GND terminal. 5. Thermal design Use a thermal design that allows for a sufficient margin by taking into account the permissible power dissipation (Pd) in actual operating conditions. 6. Short between Pins and Mounting Errors Be careful when mounting the IC on printed circuit boards. The IC may be damaged if it is mounted in a wrong orientation or if pins are shorted together. Short circuit may be caused by conductive particles caught between the pins. 7. Operating the IC in the presence of strong electromagnetic field may cause malfunction, therefore, evaluate design sufficiently. www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 25/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 Part Numbering B R 3 4 E 0 2 x x x - 3 x x BUS Type 34 : I2C Operating Temperature -40℃ to+85℃ Capacity 02=2K Package FVT :TSSOP-B8 NUX :VSON008X2030 Process Packaging and Forming Specification E2 : Embossed tape and reel (TSSOP-B8) TR : Embossed tape and reel (VSON008X2030) www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 26/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 Physical Dimension Tape and Reel Information TSSOP-B8 TSSOP-B8 3.0 ± 0.1 (MAX 3.35 include BURR) 7 6 5 1 2 3 4 4±4 1.0±0.2 0.5±0.15 1PIN MARK 0.525 +0.05 0.145 −0.03 S 0.1±0.05 1.2MAX 1.0±0.05 6.4±0.2 4.4±0.1 8 0.08 S +0.05 0.245 −0.04 0.08 M 0.65 (Unit : mm) <Tape and Reel information> Tape Embossed carrier tape Quantity 3000pcs Direction of feed E2 The direction is the 1pin of product is at the upper left when you hold ( reel on the left hand and you pull out the tape on the right hand Direction of feed 1pin Reel www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 ) ∗ Order quantity needs to be multiple of the minimum quantity. 27/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 Physical Dimension Tape and Reel Information‐Continued VSON008X2030 VSON008X2030 3.0±0.1 2.0±0.1 0.6MAX 1PIN MARK 1.5±0.1 0.5 1 4 8 5 0.25 1.4±0.1 0.3±0.1 C0.25 (0.12) 0.08 S +0.03 0.02 −0.02 S +0.05 0.25 −0.04 (Unit : mm) <Tape and Reel information> Tape Embossed carrier tape Quantity 4000pcs Direction of feed TR The direction is the 1pin of product is at the upper right when you hold ( reel on the left hand and you pull out the tape on the right hand Direction of feed 1pin Reel www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 ) ∗ Order quantity needs to be multiple of the minimum quantity. 28/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 Marking Diagrams Part Number Marking VSON008X2030 (TOP VIEW) Part Number Marking 3 E 0 3 E 0 2 3 TSSOP-B8 (TOP VIEW) 2 LOT Number 3 LOT Number 1PIN MARK www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 1PIN MARK 29/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet BR34E02-3 Revision History Date Revision 07.Sep.2012 001 25.Feb.2013 002 www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Changes New Release Update some English words, sentences’ descriptions, grammar and formatting. 30/30 TSZ02201-0R2R0G100520-1-2 25.Feb.2013 Rev.002 Datasheet Notice ●General Precaution 1) Before you use our Products, you are requested to carefully read this document and fully understand its contents. ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any ROHM’s Products against warning, caution or note contained in this document. 2) All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales representative. ●Precaution on using ROHM Products 1) Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment, OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment, transport equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. 2) ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3) Our Products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. 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Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7) De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual ambient temperature. 8) Confirm that operation temperature is within the specified range described in the product specification. 9) ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. Notice - Rev.004 © 2013 ROHM Co., Ltd. All rights reserved. Datasheet ●Precaution for Mounting / Circuit board design 1) When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability. 2) In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the ROHM representative in advance. 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ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or concerning such information. 2) This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM. 3) The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of ROHM. 4) In no event shall you use in any way whatsoever the Products and the related technical information contained in the Products or this document for any military purposes, including but not limited to, the development of mass-destruction weapons. 5) The proper names of companies or products described in this document are trademarks or registered trademarks of ROHM, its affiliated companies or third parties. Notice - Rev.004 © 2013 ROHM Co., Ltd. All rights reserved.