ROHM R8008ANX

Data Sheet
10V Drive Nch MOSFET
R8008ANX
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
TO-220FM
φ3.2
10.0
4.5
1.2
1.3
14.0
2.5
8.0
15.0
Features
1) Low on-resistance.
2) Low input capacitance.
3) High ESD.
12.0
2.8
(1) Gate
(2) Drain
(3) Source
0.8
2.54
2.54
2.6
0.75
(1) (2) (3)
 Application
Switching
 Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
R8008ANX
 Inner circuit
Bulk
500

∗1
(1) Gate
(2) Drain
(3) Source
 Absolute maximum ratings (Ta = 25C)
Symbol
Parameter
Drain-source voltage
VDSS
Gate-source voltage
Drain current
Continuous
VGSS
ID *3
Limits
Unit
800
30
V
V
8
A
Pulsed
Continuous
IDP
IS
*1
*3
32
8
A
A
Pulsed
ISP
*1
32
A
Avalanche energy
IAS *2
E *2
Power dissipation
Channel temperature
Range of storage temperature
PD *4
Tch
Tstg
4
4.2
50
A
mJ
W
150
55 to 150
C
C
Limits
2.5
Unit
C / W
Source current
(Body Diode)
Avalanche current
AS
(1)
(2)
(3)
1 BODY DIODE
*1 Pw10s, Duty cycle1%
*2 L
500H, VDD=50V, RG=25, T ch=25°C
*3 Limited only by maximum channel temperature allowed.
*4 TC=25°C
 Thermal resistance
Parameter
Channel to Case
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Symbol
Rth (ch-c)
1/5
2011.10 - Rev.A
Data Sheet
R8008ANX
 Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Symbol
Min.
Max.
Unit
-
-
100
nA
VGS=30V, VDS=0V
800
-
-
V
ID=1mA, VGS=0V
IGSS
Drain-source breakdown voltage V(BR)DSS
Conditions
Typ.
IDSS
-
-
100
A
VDS=800V, VGS=0V
VGS (th)
3.0
-
5.0
V
VDS=10V, ID=1mA
RDS (on)*
-
0.79
1.03

ID=4.0A, VGS=10V
l Yfs l*
2.0
-
-
S
VDS=10V, ID=4.0A
Input capacitance
Ciss
-
1080
-
pF
VDS=25V
Output capacitance
Coss
-
480
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
32
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
32
-
ns
VDD 400V, ID=4.0A
tr *
-
50
-
ns
VGS=10V
Turn-off delay time
td(off) *
-
85
-
ns
RL=100
Fall time
tf *
Qg *
Qgs *
Qgd *
-
30
-
ns
RG=10
-
39
-
nC
VDD 400V
-
8.7
23
-
nC
nC
ID=8.0A
VGS=10V
Min.
-
Typ.
-
Max.
1.5
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Rise time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
Body diode characteristics (Source-Drain)
Parameter
Forward Voltage
Symbol
VSD *
Conditions
Unit
V IS=8.0A, VGS=0V
*Pulsed
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2/5
2011.10 - Rev.A
Data Sheet
R8008ANX
Electrical characteristic curves (Ta=25C)
Fig.2 Typical Output Characteristics (Ⅱ)
Fig.1 Typical Output Characteristics (Ⅰ)
2
8
Ta=25°C
pulsed
Ta=25°C
pulsed
VGS=10.0V
6
Drain Current : ID [A]
Drain Current : ID [A]
VGS=10.0V
VGS=8.0V
VGS=7.0V
1
VGS=6.5V
VGS=6.0V
VGS=8.0V
4
VGS=7.0V
VGS=6.5V
2
VGS=6.0V
VGS=5.5V
VGS=5.5V
VGS=5.0V
0
0
0
0.2
0.4
0.6
0.8
1
0
2
4
Drain-Source Voltage : VDS [V]
10
10
6
VDS=10V
pulsed
Gate Threshold Voltage : VGS(th) [V]
VDS=10V
ID=1mA
pulsed
1
Drain Currnt : ID [A]
8
Fig.4 Gate Threshold Voltage vs. Channel Temperature
Fig.3 Typical Transfer Characteristics
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.001
5
4
3
2
2
3
4
5
6
7
8
-50
0
50
100
150
Channel Temperature : T ch [℃]
Gate-Source Voltage : VGS [V]
Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
10
Static Drain-Source On-State Resistance : RDS(on) [Ω]
2.5
VGS=10V
pulsed
Static Drain-Source On-State Resistance
RDS(on) [Ω]
6
Drain-Source Voltage : VDS [V]
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
0.01
VGS=10V
pulsed
2
1.5
ID=8A
1
ID=4A
0.5
0
0.1
1
10
-50
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© 2011 ROHM Co., Ltd. All rights reserved.
0
50
100
150
Channel Temperature : T ch [℃]
Drain Current : ID [A]
3/5
2011.10 - Rev.A
Data Sheet
R8008ANX
Fig.7 Forward Transfer Admittance vs. Drain Current
Fig.8 Source Current vs. Source-Drain Voltage
10
10
VGS=0V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
Source Current : Is [A]
Forward Transfer Admittance
Yfs [S]
VDS=10V
pulsed
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0.001
0.001
1
0.1
0.01
0.01
0.1
1
10
0
Drain Current : ID [A]
0.5
1
1.5
Source-Drain Voltage : VSD [V]
Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
3
Static Drain-Source On-State Resistance
RDS(on) [Ω]
Ta=25°C
pulsed
2
ID=8.0A
1
ID=4.0A
0
0
5
10
15
20
Gate-Source Voltage : VGS [V]
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© 2011 ROHM Co., Ltd. All rights reserved.
4/5
2011.10 - Rev.A
Data Sheet
R8008ANX
 Measurement circuits
Pulse width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
90%
td(off)
tr
ton
tf
toff
Fig.1-2 Switching Waveforms
Fig.1-1 Switching Time Measurement Circuit
VG
VGS
ID
VDS
RL
Qg
VGS
D.U.T.
IG(Const.)
Qgs
Qgd
VDD
Charge
Fig.2-2 Gate Charge Waveform
Fig.2-1 Gate Charge Measurement Circuit
VGS
IAS
VDS
V(BR)DSS
D.U.T.
RG
L
VDD
IAS
VDD
EAS =
Fig.3-1 Avalanche Measurement Circuit
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© 2011 ROHM Co., Ltd. All rights reserved.
1
2
L IAS
2
V(BR)DSS
V(BR)DSS - VDD
Fig.3-2 Avalanche Waveform
5/5
2011.10 - Rev.A
Notice
Notes
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R1120A