RRH140P03 Pch -30V -14A Power MOSFET Datasheet lOutline VDSS -30V RDS(on) (Max.) 7mW ID -14A PD 2.0W lFeatures SOP8 (7) (5) (6) (8) (4) (3) (1) (2) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). 4) Pb-free lead plating ; RoHS compliant Source Source Source Gate (5) (6) (7) (8) Drain Drain Drain Drain *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging lApplication DC/DC Converter Type Taping Reel size (mm) 330 Tape width (mm) 12 Basic ordering unit (pcs) Taping code 2,500 TB Marking RRH140P03 lAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage VDSS -30 V Continuous drain current ID *1 14 A ID,pulse *2 56 A Gate - Source voltage VGSS 20 V Avalanche energy, single pulse EAS *3 1.6 mJ PD *4 2.0 W PD *5 0.65 W Tj 150 °C Tstg -55 to +150 °C Pulsed drain current Power dissipation Junction temperature Range of storage temperature www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/11 2012.06 - Rev.C Data Sheet RRH140P03 lThermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction - ambient RthJA *4 - - 62.5 °C/W Thermal resistance, junction - ambient RthJA *5 - - 192 °C/W lElectrical characteristics(Ta = 25°C) Parameter Drain - Source breakdown voltage Breakdown voltage temperature coefficient Symbol V(BR)DSS Conditions VGS = 0V, ID = -1mA ΔV(BR)DSS ID = -1mA ΔTj referenced to 25°C Values Unit Min. Typ. Max. -30 - - V - -25 - mV/C Zero gate voltage drain current IDSS VDS = -30V, VGS = 0V - - -1 mA Gate - Source leakage current IGSS VGS = 20V, VDS = 0V - - 10 mA Gate threshold voltage VGS (th) VDS = -10V, ID = -1mA -1.0 - -2.5 V Gate threshold voltage temperature coefficient ΔV(GS)th ΔTj ID = -1mA referenced to 25°C - 3.9 - mV/C VGS=-10V, ID=-14A - 5.0 7.0 VGS=-4.5V, ID=-7A - 6.7 9.4 VGS=-4.0V, ID=-7A - 7.3 10.2 VGS= -10V, ID= -14A, Tj=125°C - 7.5 10.5 RG f = 1MHz, open drain - 3.0 - W gfs *6 VDS = -10V, ID = -14A 20 40 - S Static drain - source on - state resistance Gate input resistannce Transconductance RDS(on) *6 mW *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 L ⋍ 10mH, VDD = -15V, Rg = 25W, starting Tj = 25°C *4 Mounted on a ceramic board (30×30×0.8mm) *5 Mounted on a FR4 (20×20×0.8mm) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/11 2012.06 - Rev.C Data Sheet RRH140P03 lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Input capacitance Ciss VGS = 0V - 8000 - Output capacitance Coss VDS = -10V - 1000 - Reverse transfer capacitance Crss f = 1MHz - 1000 - VDD ⋍ -15V, VGS = -10V - 32 - ID = -7A - 80 - td(off) *6 RL = 2.1W - 360 - tf *6 RG = 10W - 200 - Turn - on delay time td(on) *6 tr *6 Rise time Turn - off delay time Fall time Unit pF ns lGate Charge characteristics(Ta = 25°C) Parameter Total gate charge Symbol Qg *6 Gate - Source charge Qgs *6 Gate - Drain charge Qgd *6 Conditions Values Min. Typ. Max. VDD ⋍ -15V, ID = -14A VGS = -5V - 80 - VDD ⋍ -15V, ID = -14A VGS = -10V - 150 - - 18 - - 30 - VDD ⋍ -15V, ID = -14A VGS = -5V Unit nC lBody diode electrical characteristics (Source-Drain)(Ta = 25°C) Parameter Inverse diode continuous, forward current Forward voltage Symbol IS *1 VSD *6 Reverse recovery time trr *6 Reverse recovery charge Qrr *6 Conditions Values Unit Min. Typ. Max. Ta = 25°C - - -1.6 A VGS = 0V, Is = -14A - - -1.2 V IS = -14A di/dt = 100A / ms - 50 100 ns - 50 100 mC *6 Pulsed www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3/11 2012.06 - Rev.C Data Sheet RRH140P03 lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 PW = 100μs 100 10 80 Drain Current : -ID [A] Power Dissipation : PD/PD max. [%] 120 60 40 20 0 0 50 100 150 PW = 10ms 1 DC Operation Operation in this area is limited by RDS(on) ( VGS = 10V ) 0.1 0.01 200 PW = 1ms Ta=25ºC Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 10 100 Drain - Source Voltage : -VDS [V] Junction Temperature : Tj [°C] Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width Fig.4 Single Pulse Maxmum Power dissipation 10 10000 Ta=25ºC Single Pulse Ta=25ºC Single Pulse 1 top D=1 D=0.5 D=0.1 D=0.05 D=0.01 bottom Signle 0.1 0.01 0.001 0.0001 Rth(ch-a)=62.5ºC/W Rth(ch-a)(t)=r(t)×Rth(ch-a) Mounted on ceramic board (30mm × 30mm × 0.8mm) 0.01 1 Peak Transient Power : P(W) Normalized Transient Thermal Resistance : r(t) 1 100 10 1 0.0001 100 0.01 1 100 Pulse Width : PW [s] Pulse Width : PW [s] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1000 4/11 2012.06 - Rev.C Data Sheet RRH140P03 lElectrical characteristic curves Fig.6 Avalanche Energy Derating Curve vs Junction Temperature Fig.5 Avalanche Current vs Inductive Load 120% Starting Tch=25ºC VDD= -15V VGS= -10V RG=10W 10 1 0.1 0.01 0.1 1 10 100 Avalanche Energy : EAS / EAS max. [%] Avalanche Current : -IAR [A] 100 100% 80% 60% 40% 20% 0% 0 25 50 Coil Inductance : L [mH] 100 125 150 175 Junction Temperature : Tj [ºC] Fig.7 Typical Output Characteristics(I) Fig.8 Typical Output Characteristics(II) 20 20 Ta= 25ºC 18 16 12 VGS= -3.0V 10 VGS= -2.6V 8 6 VGS= -2.4V 4 VGS= -2.2V 2 0 0.2 0.4 0.6 0.8 14 VGS= -2.6V VGS= -2.4V 10 8 6 4 0 1 Ta= 25ºC 12 2 VGS= -2.2V 0 2 4 6 8 10 Drain - Source Voltage : -VDS [V] Drain - Source Voltage : -VDS [V] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. VGS= -10V VGS= -4.5V VGS= -4.0V 16 VGS= -10V VGS= -4.5V VGS= -4.0V 14 0 18 Drain Current : -ID [A] Drain Current : -ID [A] 75 5/11 2012.06 - Rev.C Data Sheet RRH140P03 Fig.9 Breakdown Voltage vs. Junction Temperature Fig.10 Typical Transfer Characteristics 60 100 VDS = -10V VGS=0V ID= -1mA 10 Drain Current : -ID [A] 40 20 0 -50 0 50 100 Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 1 0.1 0.01 150 1 Junction Temperature : Tj [°C] 1.5 2 2.5 3 Gate - Source Voltage : -VGS [V] Fig.11 Gate Threshold Voltage vs. Junction Temperature Fig.12 Transconductance vs. Drain Current 3 100 VDS= -10V ID= -1mA VDS = -10V Transconductance : gfs [S] Gate Threshold Voltage : -VGS(th) [V] Drain - Source Breakdown Voltage : -V(BR)DSS [V] lElectrical characteristic curves 2 1 0 -50 0 50 100 Ta = -25ºC Ta = 25ºC Ta = 75ºC Ta = 125ºC 1 0.1 0.01 150 Junction Temperature : Tj [°C] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 10 0.1 1 10 100 Drain Current : -ID [A] 6/11 2012.06 - Rev.C Data Sheet RRH140P03 lElectrical characteristic curves Fig.14 Static Drain - Source On - State Resistance vs. Gate Source Voltage 1.2 50 Drain Current Dissipation : ID / ID max. (%) 1 0.8 0.6 0.4 0.2 0 -25 0 25 50 75 100 125 150 Static Drain - Source On-State Resistance : RDS(on) [mW] Fig.13 Drain Current Derating Curve Ta= 25ºC 40 ID= -14.0A 30 ID= -7.0A 20 10 0 0 Junction Temperature : Tj [ºC] 15 Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature 8 Ta= 25ºC VGS= -4.0V VGS= -4.5V VGS= -10V 10 . 0.1 1 10 100 Static Drain - Source On-State Resistance : RDS(on) [mW] 100 Static Drain - Source On-State Resistance : RDS(on) [mW] 10 Gate - Source Voltage : -VGS [V] Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(I) 1 5 Drain Current : -ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 6 4 2 VGS= -10V ID= -14.0A 0 -50 -25 0 25 50 75 100 125 150 Junction Temperature : Tj [ºC] 7/11 2012.06 - Rev.C Data Sheet RRH140P03 Fig.17 Static Drain - Source On - State Resistance vs. Drain Current(II) Fig.18 Static Drain - Source On - State Resistance vs. Drain Current(III) 100 100 VGS = -10V Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 10 1 0.1 1 10 100 Static Drain - Source On-State Resistance : RDS(on) [mW] Static Drain - Source On-State Resistance : RDS(on) [mW] lElectrical characteristic curves Drain Current : -ID [A] VGS= -4.5V Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 10 1 0.1 1 10 100 Drain Current : -ID [A] Fig.19 Static Drain - Source On - State Resistance vs. Drain Current(IV) Static Drain - Source On-State Resistance : RDS(on) [mW] 100 VGS= -4.0V Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 10 1 0.1 1 10 100 Drain Current : -ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 8/11 2012.06 - Rev.C Data Sheet RRH140P03 lElectrical characteristic curves Fig.20 Typical Capacitance vs. Drain - Source Voltage Fig.21 Switching Characteristics 10000 100000 Ciss 10000 1000 Ta = 25ºC VDD= -15V VGS= -10V RG=10W td(off) Switching Time : t [ns] Capacitance : C [pF] Ta = 25ºC f=1MHz VGS=0V Coss Crss tf 1000 100 td(on) tr 100 0.01 0.1 1 10 10 100 0.01 0.1 Fig.22 Dynamic Input Characteristics 100 Fig.23 Source Current vs. Source Drain Voltage 10 100 VGS = 0V Ta = 25ºC VDD= -15V ID= -14A RG=10W 8 10 Source Current : -IS [A] Gate - Source Voltage : -VGS [V] 10 Drain Current : -ID [A] Drain - Source Voltage : -VDS [V] 6 4 2 0 1 0 20 40 60 80 Total Gate Charge : Qg [nC] Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 0.01 100 120 140 160 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1 0 0.5 1 1.5 Source-Drain Voltage : -VDS [V] 9/11 2012.06 - Rev.C Data Sheet RRH140P03 lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 10/11 2012.06 - Rev.C Data Sheet RRH140P03 lDimensions (Unit : mm) e c L1 Lp E HE SOP8 b x A3 S A l1 D A1 A2 A b2 e A S e1 y s Patterm of terminal position areas DIM A A1 A2 A3 b c D E e HE L1 Lp x y DIM b2 e1 l1 MILIMETERS MIN MAX 1.75 0.15 1.40 1.60 0.25 0.30 0.50 0.10 0.30 4.80 5.20 3.75 4.05 1.27 5.70 6.30 0.50 0.70 0.65 0.85 0.15 0.10 MILIMETERS MIN MAX 0.65 5.15 1.15 INCHES MIN - MAX 0.069 0.006 0.055 0.063 0.01 0.012 0.004 0.189 0.148 0.02 0.012 0.205 0.159 0.05 0.224 0.02 0.026 0.248 0.028 0.033 0.006 0.004 INCHES MIN - MAX 0.026 0.203 - 0.045 Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 11/11 2012.06 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. 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