ROHM RRH140P03_12

RRH140P03
Pch -30V -14A Power MOSFET
Datasheet
lOutline
VDSS
-30V
RDS(on) (Max.)
7mW
ID
-14A
PD
2.0W
lFeatures
SOP8
(7)
(5)
(6)
(8)
(4)
(3)
(1)
(2)
lInner circuit
1) Low on - resistance.
(1)
(2)
(3)
(4)
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
4) Pb-free lead plating ; RoHS compliant
Source
Source
Source
Gate
(5)
(6)
(7)
(8)
Drain
Drain
Drain
Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
lApplication
DC/DC Converter
Type
Taping
Reel size (mm)
330
Tape width (mm)
12
Basic ordering unit (pcs)
Taping code
2,500
TB
Marking
RRH140P03
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-30
V
Continuous drain current
ID *1
14
A
ID,pulse *2
56
A
Gate - Source voltage
VGSS
20
V
Avalanche energy, single pulse
EAS *3
1.6
mJ
PD *4
2.0
W
PD *5
0.65
W
Tj
150
°C
Tstg
-55 to +150
°C
Pulsed drain current
Power dissipation
Junction temperature
Range of storage temperature
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/11
2012.06 - Rev.C
Data Sheet
RRH140P03
lThermal resistance
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Thermal resistance, junction - ambient
RthJA *4
-
-
62.5
°C/W
Thermal resistance, junction - ambient
RthJA *5
-
-
192
°C/W
lElectrical characteristics(Ta = 25°C)
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Symbol
V(BR)DSS
Conditions
VGS = 0V, ID = -1mA
ΔV(BR)DSS ID = -1mA
ΔTj
referenced to 25°C
Values
Unit
Min.
Typ.
Max.
-30
-
-
V
-
-25
-
mV/C
Zero gate voltage drain current
IDSS
VDS = -30V, VGS = 0V
-
-
-1
mA
Gate - Source leakage current
IGSS
VGS = 20V, VDS = 0V
-
-
10
mA
Gate threshold voltage
VGS (th)
VDS = -10V, ID = -1mA
-1.0
-
-2.5
V
Gate threshold voltage
temperature coefficient
ΔV(GS)th
ΔTj
ID = -1mA
referenced to 25°C
-
3.9
-
mV/C
VGS=-10V, ID=-14A
-
5.0
7.0
VGS=-4.5V, ID=-7A
-
6.7
9.4
VGS=-4.0V, ID=-7A
-
7.3
10.2
VGS= -10V, ID= -14A, Tj=125°C
-
7.5
10.5
RG
f = 1MHz, open drain
-
3.0
-
W
gfs *6
VDS = -10V, ID = -14A
20
40
-
S
Static drain - source
on - state resistance
Gate input resistannce
Transconductance
RDS(on)
*6
mW
*1 Limited only by maximum temperature allowed.
*2 Pw  10ms, Duty cycle  1%
*3 L ⋍ 10mH, VDD = -15V, Rg = 25W, starting Tj = 25°C
*4 Mounted on a ceramic board (30×30×0.8mm)
*5 Mounted on a FR4 (20×20×0.8mm)
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/11
2012.06 - Rev.C
Data Sheet
RRH140P03
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Input capacitance
Ciss
VGS = 0V
-
8000
-
Output capacitance
Coss
VDS = -10V
-
1000
-
Reverse transfer capacitance
Crss
f = 1MHz
-
1000
-
VDD ⋍ -15V, VGS = -10V
-
32
-
ID = -7A
-
80
-
td(off) *6
RL = 2.1W
-
360
-
tf *6
RG = 10W
-
200
-
Turn - on delay time
td(on) *6
tr *6
Rise time
Turn - off delay time
Fall time
Unit
pF
ns
lGate Charge characteristics(Ta = 25°C)
Parameter
Total gate charge
Symbol
Qg *6
Gate - Source charge
Qgs *6
Gate - Drain charge
Qgd *6
Conditions
Values
Min.
Typ.
Max.
VDD ⋍ -15V, ID = -14A
VGS = -5V
-
80
-
VDD ⋍ -15V, ID = -14A
VGS = -10V
-
150
-
-
18
-
-
30
-
VDD ⋍ -15V, ID = -14A
VGS = -5V
Unit
nC
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Inverse diode continuous,
forward current
Forward voltage
Symbol
IS *1
VSD *6
Reverse recovery time
trr *6
Reverse recovery charge
Qrr *6
Conditions
Values
Unit
Min.
Typ.
Max.
Ta = 25°C
-
-
-1.6
A
VGS = 0V, Is = -14A
-
-
-1.2
V
IS = -14A
di/dt = 100A / ms
-
50
100
ns
-
50
100
mC
*6 Pulsed
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
3/11
2012.06 - Rev.C
Data Sheet
RRH140P03
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
100
PW = 100μs
100
10
80
Drain Current : -ID [A]
Power Dissipation : PD/PD max. [%]
120
60
40
20
0
0
50
100
150
PW = 10ms
1
DC Operation
Operation in this area
is limited by RDS(on)
( VGS = 10V )
0.1
0.01
200
PW = 1ms
Ta=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
0.1
10
100
Drain - Source Voltage : -VDS [V]
Junction Temperature : Tj [°C]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maxmum Power dissipation
10
10000
Ta=25ºC
Single Pulse
Ta=25ºC
Single Pulse
1
top
D=1
D=0.5
D=0.1
D=0.05
D=0.01
bottom Signle
0.1
0.01
0.001
0.0001
Rth(ch-a)=62.5ºC/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board
(30mm × 30mm × 0.8mm)
0.01
1
Peak Transient Power : P(W)
Normalized Transient Thermal Resistance : r(t)
1
100
10
1
0.0001
100
0.01
1
100
Pulse Width : PW [s]
Pulse Width : PW [s]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1000
4/11
2012.06 - Rev.C
Data Sheet
RRH140P03
lElectrical characteristic curves
Fig.6 Avalanche Energy Derating Curve
vs Junction Temperature
Fig.5 Avalanche Current vs Inductive Load
120%
Starting Tch=25ºC
VDD= -15V
VGS= -10V
RG=10W
10
1
0.1
0.01
0.1
1
10
100
Avalanche Energy : EAS / EAS max. [%]
Avalanche Current : -IAR [A]
100
100%
80%
60%
40%
20%
0%
0
25
50
Coil Inductance : L [mH]
100
125
150
175
Junction Temperature : Tj [ºC]
Fig.7 Typical Output Characteristics(I)
Fig.8 Typical Output Characteristics(II)
20
20
Ta= 25ºC
18
16
12
VGS= -3.0V
10
VGS= -2.6V
8
6
VGS= -2.4V
4
VGS= -2.2V
2
0
0.2
0.4
0.6
0.8
14
VGS= -2.6V
VGS= -2.4V
10
8
6
4
0
1
Ta= 25ºC
12
2
VGS= -2.2V
0
2
4
6
8
10
Drain - Source Voltage : -VDS [V]
Drain - Source Voltage : -VDS [V]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
VGS= -10V
VGS= -4.5V
VGS= -4.0V
16
VGS= -10V
VGS= -4.5V
VGS= -4.0V
14
0
18
Drain Current : -ID [A]
Drain Current : -ID [A]
75
5/11
2012.06 - Rev.C
Data Sheet
RRH140P03
Fig.9 Breakdown Voltage
vs. Junction Temperature
Fig.10 Typical Transfer Characteristics
60
100
VDS = -10V
VGS=0V
ID= -1mA
10
Drain Current : -ID [A]
40
20
0
-50
0
50
100
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
1
0.1
0.01
150
1
Junction Temperature : Tj [°C]
1.5
2
2.5
3
Gate - Source Voltage : -VGS [V]
Fig.11 Gate Threshold Voltage
vs. Junction Temperature
Fig.12 Transconductance vs. Drain Current
3
100
VDS= -10V
ID= -1mA
VDS = -10V
Transconductance : gfs [S]
Gate Threshold Voltage : -VGS(th) [V]
Drain - Source Breakdown Voltage : -V(BR)DSS [V]
lElectrical characteristic curves
2
1
0
-50
0
50
100
Ta = -25ºC
Ta = 25ºC
Ta = 75ºC
Ta = 125ºC
1
0.1
0.01
150
Junction Temperature : Tj [°C]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
10
0.1
1
10
100
Drain Current : -ID [A]
6/11
2012.06 - Rev.C
Data Sheet
RRH140P03
lElectrical characteristic curves
Fig.14 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
1.2
50
Drain Current Dissipation
: ID / ID max. (%)
1
0.8
0.6
0.4
0.2
0
-25
0
25
50
75
100
125
150
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Fig.13 Drain Current Derating Curve
Ta= 25ºC
40
ID= -14.0A
30
ID= -7.0A
20
10
0
0
Junction Temperature : Tj [ºC]
15
Fig.16 Static Drain - Source On - State
Resistance vs. Junction Temperature
8
Ta= 25ºC
VGS= -4.0V
VGS= -4.5V
VGS= -10V
10
.
0.1
1
10
100
Static Drain - Source On-State Resistance
: RDS(on) [mW]
100
Static Drain - Source On-State Resistance
: RDS(on) [mW]
10
Gate - Source Voltage : -VGS [V]
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(I)
1
5
Drain Current : -ID [A]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
6
4
2
VGS= -10V
ID= -14.0A
0
-50 -25
0
25
50
75 100 125 150
Junction Temperature : Tj [ºC]
7/11
2012.06 - Rev.C
Data Sheet
RRH140P03
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Fig.18 Static Drain - Source On - State
Resistance vs. Drain Current(III)
100
100
VGS = -10V
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
10
1
0.1
1
10
100
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Static Drain - Source On-State Resistance
: RDS(on) [mW]
lElectrical characteristic curves
Drain Current : -ID [A]
VGS= -4.5V
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
10
1
0.1
1
10
100
Drain Current : -ID [A]
Fig.19 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
Static Drain - Source On-State Resistance
: RDS(on) [mW]
100
VGS= -4.0V
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
10
1
0.1
1
10
100
Drain Current : -ID [A]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
8/11
2012.06 - Rev.C
Data Sheet
RRH140P03
lElectrical characteristic curves
Fig.20 Typical Capacitance
vs. Drain - Source Voltage
Fig.21 Switching Characteristics
10000
100000
Ciss
10000
1000
Ta = 25ºC
VDD= -15V
VGS= -10V
RG=10W
td(off)
Switching Time : t [ns]
Capacitance : C [pF]
Ta = 25ºC
f=1MHz
VGS=0V
Coss
Crss
tf
1000
100
td(on)
tr
100
0.01
0.1
1
10
10
100
0.01
0.1
Fig.22 Dynamic Input Characteristics
100
Fig.23 Source Current
vs. Source Drain Voltage
10
100
VGS = 0V
Ta = 25ºC
VDD= -15V
ID= -14A
RG=10W
8
10
Source Current : -IS [A]
Gate - Source Voltage : -VGS [V]
10
Drain Current : -ID [A]
Drain - Source Voltage : -VDS [V]
6
4
2
0
1
0
20
40
60
80
Total Gate Charge : Qg [nC]
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
0.01
100 120 140 160
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1
0
0.5
1
1.5
Source-Drain Voltage : -VDS [V]
9/11
2012.06 - Rev.C
Data Sheet
RRH140P03
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
10/11
2012.06 - Rev.C
Data Sheet
RRH140P03
lDimensions (Unit : mm)
e
c
L1
Lp
E
HE
SOP8
b
x
A3
S A
l1
D
A1
A2
A
b2
e
A
S
e1
y s
Patterm of terminal position areas
DIM
A
A1
A2
A3
b
c
D
E
e
HE
L1
Lp
x
y
DIM
b2
e1
l1
MILIMETERS
MIN
MAX
1.75
0.15
1.40
1.60
0.25
0.30
0.50
0.10
0.30
4.80
5.20
3.75
4.05
1.27
5.70
6.30
0.50
0.70
0.65
0.85
0.15
0.10
MILIMETERS
MIN
MAX
0.65
5.15
1.15
INCHES
MIN
-
MAX
0.069
0.006
0.055
0.063
0.01
0.012
0.004
0.189
0.148
0.02
0.012
0.205
0.159
0.05
0.224
0.02
0.026
0.248
0.028
0.033
0.006
0.004
INCHES
MIN
-
MAX
0.026
0.203
-
0.045
Dimension in mm/inches
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
11/11
2012.06 - Rev.C
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
R1120A