Datasheet

Zener Diode
Datasheet
EDZVFH series
AEC-Q101 Qualified
Land size figure (Unit : mm)
Dimensions (Unit : mm)
Application
0.8±0.05
0.8
0.12±0.05
0.6
Constant voltage control
1.2±0.05
1) Compact,2-pin mini-mold type for
high-density mounting. (EMD2)
1.6±0.1
1.7
Features
EMD2
2) High reliability.
3) Can be mounted automatically,
0.3±0.05
0.6±0.1
using chip mounter.
Structure
Cathode
ROHM : EMD2
JEDEC :SOD-523
JEITA : SC-79
Construction
EX. EDZV3.6B
Anode
Silicon epitaxial planar
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Power dissipation
P
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to 150
°C
Operating temperature
Topr
55 to 150
°C
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© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.03 - Rev.B
Data Sheet
EDZVFH series
Electical characteristics (Ta=25°C)
Symbol
TYP.
Zener voltage ：Vz(V)
Operating resistance ：Zz(Ω)
Rising operataing
resistance ：Zz(Ω)
Reverse current ：
IR(A)
MIN.
MAX.
Iz(mA)
MAX.
Iz(mA)
MAX.
Iz(mA)
MAX.
VR(V)
EDZV 3.6B
3.600
3.845
5.0
100
5.0
1000
1.0
10.0
1.0
EDZV 3.9B
3.890
4.160
5.0
100
5.0
1000
1.0
5.0
1.0
EDZV 4.3B
4.170
4.430
5.0
100
5.0
1000
1.0
5.0
1.0
100
5.0
800
0.5
2.0
1.0
80
5.0
500
0.5
2.0
1.5
200
0.5
1.0
2.5
100
0.5
1.0
3.0
3.5
EDZV 4.7B
4.550
4.750
5.0
EDZV 5.1B
4.980
5.200
5.0
60
5.0
60
5.0
60
0.5
0.5
60
0.5
0.5
4.0
5.0
EDZV 5.6B
5.490
5.730
5.0
EDZV 6.2B
6.060
6.330
5.0
40
5.0
30
5.0
60
0.5
0.5
60
0.5
0.5
6.0
7.0
8.0
EDZV 6.8B
6.650
6.930
5.0
EDZV 7.5B
7.280
7.600
5.0
30
5.0
30
5.0
60
0.5
0.1
60
0.5
0.1
9.0
EDZV 8.2B
8.020
8.360
5.0
EDZV 9.1B
8.850
9.230
5.0
30
5.0
30
5.0
EDZV 10B
9.770
10.210
5.0
EDZV 11B
10.760
11.220
5.0
EDZV 12B
11.740
12.240
5.0
30
5.0
80
0.5
0.1
EDZV 13B
12.910
13.490
5.0
37
5.0
80
0.5
0.1
10.0
EDZV 15B
14.340
14.980
5.0
42
5.0
80
0.5
0.1
11.0
EDZV 16B
15.850
16.510
5.0
50
5.0
80
0.5
0.1
12.0
EDZV 18B
17.560
18.350
5.0
80
0.5
0.1
13.0
19.520
20.390
5.0
65
85
5.0
EDZV 20B
5.0
100
0.5
0.1
15.0
EDZV 22B
21.540
22.470
5.0
100
5.0
100
0.5
0.1
17.0
EDZV 24B
23.720
24.780
5.0
120
5.0
120
0.5
0.1
19.0
EDZV 27B
26.190
27.530
2.0
150
2.0
150
0.5
0.1
21.0
EDZV 30B
29.190
30.690
2.0
200
2.0
200
0.5
0.1
23.0
EDZV 33B
32.150
35.070
33.790
36.870
2.0
250
2.0
300
2.0
250
300
0.5
0.5
0.1
2.0
0.1
25.0
27.0
EDZV 36B
(1) The zener voltage(Vz) is measured 40ms after power is supplied.
(2) The operating resistances(Zz,Zzk) are measured by superimposing a minute alternating current
on the regulated current(Iz)
MARKING (Type No.)
TYPE
TYPE
TYPE NO.
TYPE NO.
EDZV 3.6B
6 2
EDZV 12B
2 5
EDZV 3.9B
7 2
EDZV 13B
3 5
EDZV 4.3B
8 2
EDZV 15B
4 5
EDZV 4.7B
9 2
EDZV 16B
5 5
EDZV 5.1B
A 2
EDZV 18B
6 5
EDZV 5.6B
C 2
EDZV 20B
7 5
EDZV 6.2B
E 2
EDZV 22B
8 5
EDZV 6.8B
F 2
EDZV 24B
9 5
EDZV 7.5B
H 2
EDZV 27B
A 5
EDZV 8.2B
J 2
EDZV 30B
C 5
EDZV 9.1B
L 2
EDZV 33B
E 5
EDZV 10B
0 5
EDZV 36B
EDZV 11B
1 5
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© 2015 ROHM Co., Ltd. All rights reserved.
F 5
2/5
2015.03 - Rev.B
Data Sheet
EDZVFH series
10
ZENER CURRENT:Iz(mA)
1
0.1
4.7
0.01
7.5
5.1 5.6
4.3
8.2
6.8
3.9
9.1 10
6.2
11
3.6
12
15
13
16
18
22
20
24
33
30
27
36
0.001
0
5
10
15
20
25
30
35
40
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
POWER DISSIPATION:Pd(mW)
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE:Ta(°C)
Pd-Ta CHARACTERISTICS
40
0.1
%/°C
1000
Mounted on epoxy board
0.06
30
0.04
25
0.02
20
0
15
mV/°C
-0.02
10
-0.04
5
-0.06
0
-5
-0.08
0
10
20
30
Rth(j-a)
Rth(j-c)
100
10
0.001
40
ZENER VOLTAGE：Vz(V)
γz-Vz CHARACTERISTICS
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© 2015 ROHM Co., Ltd. All rights reserved.
TRANSIENT
THAERMAL IMPEDANCE:Rth (°C/W)
35
TEMP.COEFFICIENCE:γz(mV/°C)
TEMP.COEFFICIENCE:γz(%/°C)
0.08
0.01
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
3/5
2015.03 - Rev.B
100
10
Ta=125°C
10
1
Ta=75°C
0.1
Ta=125°C
REVERSE CURRENT:IR (nA)
ZENER CURRENT:Iz(mA)
Data Sheet
EDZVFH4.7B
Ta=25°C
Ta=25°C
0.01
1
Ta=75°C
0.1
0.01
Ta=25°C
0.001
0.001
0.0001
0
1
2
3
4
5
6
0
ZENER VOLTAGE:Vz(V)
VzIz CHARACTERISTICS
0.5
1
REVERSE VOLTAGE：VR(V)
VRIR CHARACTERISTICS
5.0
100
f=1MHz
Ta=25°C
IZ=5mA
n=30pcs
ZENER VOLTAGE:Vz(V)
4.9
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
1.5
10
4.8
4.7
AVE:4.646V
4.6
1
0
0.2
0.4
0.6
0.8
4.5
1
Vz DISRESION MAP
REVERSE VOLTAGE:VR(V)
VRCt CHARACTERISTICS
5
REVERSE CURRENT:IR(nA)
4
3.5
3
2.5
2
AVE:1.41nA
1.5
1
CAPACITANCE
BETWEENTERMINALS:Ct(pF)
60
Ta=25°C
VR=1.0V
n=30pcs
4.5
Ta=25°C
f=1MHz
VR=0V
n=10pcs
55
50
AVE:51.6pF
45
0.5
40
0
Ct DISRESION MAP
IR DISRESION MAP
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© 2015 ROHM Co., Ltd. All rights reserved.
4/5
2015.03 - Rev.B
Data Sheet
EDZVFH4.7B
30
10000
No break at 30kV
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD [kV]
DYNAMIC IMPEDANCE:Zz(Ω)
25
1000
100
10
0.1
1
AVE：16.9kV
15
10
5
0
10
C=200pF
R=0Ω
ZENER CURRENT(mA)
ZzIz CHARACTERISTICS
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© 2015 ROHM Co., Ltd. All rights reserved.
20
C=150pF
R=330Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
5/5
2015.03 - Rev.B
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries,
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R1102A