BD82030FVJ : Power Management

Datasheet
1 Channel High Side Switch ICs
1.5A Current Limit High Side Switch ICs
BD82030FVJ
Description
Key Specifications
BD82030FVJ is a Single Channel High Side Switch IC
employing N-channel power MOSFET with low on
resistance and low supply current for the power supply
line of universal serial bus (USB).
This IC has a built-in over current detection circuit,
thermal shutdown circuit, under voltage lockout and
soft start circuits.
Input Voltage Range:
ON Resistance: (VIN=5V)
Over Current Threshold:
Standby Current:
Operating Temperature Range:
Package
Features
4.5V to 5.5V
72mΩ(Typ)
1.5A
0.01μA (Typ)
-40°C to +85°C
W(Typ) D(Typ) H(Max)
3.00mm x 4.90mm x 1.10mm
TSSOP-B8J
Over-Current Protection：1.5A
Control Input Logic：Active-High
Output Discharge Function
Reverse Current Protection when Power Switch Off
Thermal Shutdown
Open-Drain Fault Flag Output
Under-Voltage Lockout
OCP Fast Response
Soft-Start Circuit
ESD Protection
UL：File No.E243261
IEC 60950-1 CB_scheme: File No.US-20060-UL
TSSOP-B8J
( MSOP8 Jedec )
Applications
USB hub in consumer appliances, PC,
PC peripheral equipment, and so forth
Typical Application Circuit
5V(Typ)
5V(typ.)
3.3V
VOUT
10kΩ
to
10kΩ~
100kΩ
100kΩ
CI N
GND
OUT
IN
OUT
IN
OUT
CL
+
-
EN(/EN) /OC
Figure 1. Typical Application Circuit
○Product structure：Silicon monolithic integrated circuit
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Datasheet
BD82030FVJ
Block Diagram
OUT
GND
IN
Charge
Pump
UVLO
IN
OUT
OCD
OUT
Gate
Logic
EN(/EN)
/OC
TSD
Figure 2. Block Diagram
Pin Configuration
8
OUT
7
OUT
3
6
OUT
4
5
/OC
GND
1
IN
2
IN
EN(/EN)
Top View
Figure 3. Pin Configuration (TOP VIEW)
Pin Descriptions
Pin No.
Symbol
I/O
Function
1
GND
-
Ground
2, 3
IN
I
Power supply input
Input terminal to the power switch and power supply input terminal of the internal circuit
Short these pins externally
4
EN, /EN
I
Enable input
Active high power on switch
High level input > 2.0V, Low level input < 0.8V
5
/OC
O
Error flag output
Low when over-current or thermal shutdown is activated
Open drain output
6, 7, 8
OUT
O
Power switch output
Short these pins externally
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Datasheet
BD82030FVJ
Absolute Maximum Ratings(Ta=25°C)
Parameter
Symbol
Rating
Unit
IN Supply Voltage
VIN
-0.3 to +6.0
V
EN Input Voltage
VEN
-0.3 to +6.0
V
/OC Voltage
V/OC
-0.3 to +6.0
V
/OC Sink Current
I/OC
5
mA
OUT Voltage
VOUT
-0.3 to +6.0
V
Storage Temperature
Tstg
-55 to +150
°C
Pd
0.58 (1)
W
Power Dissipation
(1) Mounted on 70mm x 70mm x 1.6mm glass epoxy board. Reduce 4.7mW per 1°C above 25°C
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Recommended Operating Ratings
Parameter
IN Operating Voltage
Operating Temperature
Symbol
Rating
Unit
Min
Typ
Max
VIN
4.5
5.0
5.5
V
Topr
-40
-
+85
°C
Electrical Characteristics (VIN= 5V, Ta= 25°C, unless otherwise specified.)
DC Characteristics
Parameter
Operating Current
Symbol
IDD
Limit
Unit
Min
Typ
Max
-
85
120
μA
Conditions
VEN = 5V, VOUT = open
ISTB
-
0.01
5
μA
VEN = 0V, VOUT = open
VENH
2.0
-
-
V
High input
VENL
-
-
0.8
V
Low input
IEN
-1
0.01
+1
μA
VEN = 0V or 5V
On Resistance
RON
-
72
74
90
93
mΩ
IOUT = 0.5A
IOUT = 1.0A
Reverse Leak Current
IREV
-
-
1
μA
VOUT = 5.5V, VIN = 0V
Over-Current Threshold
ITH
1.05
1.50
1.80
A
Short Circuit Output Current
ISC
0.55
0.85
1.15
A
Output Discharge Resistance
RDISC
-
55
100
Ω
IOUT = 1mA, VEN = 0V
/OC Output Low Voltage
V/OC
-
-
0.4
V
I/OC = 1mA
Standby Current
EN Input Voltage
EN Input Leakage
/OC Output Leak Current
UVLO Threshold
Current Load Slew rate
100A/s
VOUT=0V
CL=100μF
RMS
IL/OC
-
0.01
1
μA
V/OC = 5V
VTUVH
3.4
3.7
4.0
V
VIN increasing
VTUVL
3.3
3.6
3.9
V
VIN decreasing
AC Characteristics
Parameter
Symbol
Limit
Min
Typ
Max
Unit
Output Rise Time
tON1
-
0.3
10
ms
Output Turn-on Time
tON2
-
0.5
20
ms
Output Fall Time
tOFF1
-
2
10
μs
Output Turn-off Time
tOFF2
-
4
20
μs
/OC Delay Time
t/OC
5
13
20
ms
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Conditions
RL=10Ω
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Datasheet
BD82030FVJ
Measurement Circuit
VIN
VIN
A
10kΩ
1µF
1µF
GND
OUT
GND
OUT
IN
OUT
IN
OUT
IN
OUT
IN
OUT
EN(/EN)
EN(/EN)
/OC
VEN(V/EN)
RL
/OC
VEN(V/EN)
Operating Current
EN, Input Voltage, Output Rise/Fall Time
VIN
V IN
A
※10µF
VIN
A
VIN
I/OC
A
10kΩ
1µF
1µF
GND
OUT
GND
OUT
IN
OUT
IN
OUT
IN
OUT
IN
OUT
EN(/EN)
CL
IOUT
/OC
EN(/EN)
V EN(V/EN)
/OC
VEN(V/EN)
On Resistance, Over-Current Protection
/OC Output Low Voltage
※Use capacitance of more than 10μF at
output short test by using external supply.
Figure 4. Measurement Circuit
Timing Diagram
TOFF1
TON1
90%
90%
VOUT
10%
10%
TOFF2
TON2
VEN
VENH
VENL
Figure 5. Output Rise/Fall Time
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Datasheet
BD82030FVJ
Typical Performance Curves
120
120
VIN=5.0V
100
Operating
Current : :IDD
[µA]
OPERATING
CURRENT
I DD
[µA]
Operating
Current : :IDD
[µA]
OPERATING
CURRENT
I DD
[µA]
Ta=25°C
80
60
40
20
0
100
80
60
40
20
0
4
4.5
5
5.5
SUPPLY
VOLTAGE
IN[V]
Supply Voltage
: VIN: V
[V]
6
-50
1.0
1.0
VIN=5.0V
Ta=25°C
StandbyCURRENT
Current : ISTB
[µA][µA]
STANDBY
: ISTB
0.8
[µA]
Standby Current : I
100
Figure 7. Operating Current vs
Ambient Temperature
EN Enable
Figure 6. Operating Current vs
Supply Voltage
EN Enable
STB
STANDBY CURRENT
: ISTB[µA]
0
50
AMBIENT
: Ta[℃]
AmbientTEMPERATURE
Temperature ; Ta[°C]
0.6
0.4
0.2
0.0
0.8
0.6
0.4
0.2
0.0
4
4.5
5
5.5
SUPPLY
VOLTAGE
: V[V]
IN[V]
Supply Voltage
: VIN
6
-50
Figure 8. Standby Current vs
Supply Voltage
EN Disable
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0
50
AMBIENT
: Ta[℃]
AmbientTEMPERATURE
Temperature ; Ta[°C]
100
Figure 9. Standby Current vs
Ambient Temperature
EN Disable
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Datasheet
BD82030FVJ
Typical Performance Curves - continued
2.0
2.0
VIN=5.0V
Ta=25°C
Low to High
Enable
InputVOLTAGE
Voltage : V:ENV[V]
EN [V]
ENABLE
INPUT
EnableINPUT
Input VOLTAGE
Voltage : VEN
ENABLE
: V[V]
EN [V]
Low to High
1.5
High to Low
1.0
0.5
0.0
1.5
High to Low
1.0
0.5
0.0
4
4.5
5
5.5
SUPPLY
VOLTAGE
IN [V]
Supply Voltage
: VIN: V[V]
-50
6
Figure 10. EN Input Voltage vs
Supply Voltage
200
100
200
VIN=5.0V
On Resistance : RON[mΩ]
ON RESISTANCE : RON
[mΩ]
Ta=25°C
Resistance :: R
RON
[mΩ]
ON[mΩ]
ONOn
RESISTANCE
0
50
AMBIENT TEMPERATURE : Ta[℃]
Ambient Temperature ; Ta[°C]
Figure 11. EN Input Voltage vs
Ambient Temperature
150
100
1.0A Load
50
0
150
1.0A Load
100
50
0
4
4.5
5
5.5
SUPPLY
VOLTAGE
:
V
[V]
IN
Supply Voltage : VIN [V]
6
-50
Figure 12. On Resistance vs
Supply Voltage
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0
50
AMBIENT
TEMPERATURE
: Ta[℃]
Ambient
Temperature ; Ta[°C]
100
Figure 13. On Resistance vs
Ambient Temperature
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Datasheet
BD82030FVJ
Typical Performance Curves - continued
3.0
3.0
VIN=5.0V
Over Current Threshold
: ITH[A}
OVERCURRENT
THRESHOLD
: ITH[A]
Over Current Threshold : ITH[A}
OVERCURRENT THRESHOLD
: ITH[A]
Ta=25°C
2.5
2.0
1.5
1.0
0.5
0.0
2.5
2.0
1.5
1.0
0.5
0.0
4
4.5
5
5.5
[V]
SUPPLY
VOLTAGE
:
V
IN
Supply Voltage : VIN [V]
Figure 14. Over-Current Threshold vs
Supply Voltage
-50
6
100
2.0
2.0
VIN=5.0V
Short Circuit Output Current : I SC[A]
Ta=25°C
Short Circuit Output Current : I SC[A]
0
50
AMBIENT
TEMPERATURE
: Ta[℃]
Ambient Temperature ; Ta[°C]
Figure 15. Over-Current Threshold vs
Ambient Temperature
1.5
1.0
0.5
0.0
1.5
1.0
0.5
0.0
4
4.5
5
5.5
6
Supply Voltage : VIN[V]
Figure 16. Short Circuit Output Current vs
Supply Voltage
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-50
0
50
Ambient Temperature : Ta[℃]
100
Figure 17 Short Circuit Output Current vs
Ambient Temperature
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Datasheet
BD82030FVJ
Typical Performance Curves - continued
100
100
VIN=5.0V
/OC Output Low Voltage : V /OC
[mV]
/OC OUTPUT LOW VOLTAGE : /OC
V
[mV]
/OC Output Low Voltage : V [mV]
/OC OUTPUT LOW VOLTAGE /OC
: V /OC [mV]
Ta=25°C
80
60
40
20
0
80
60
40
20
0
4
4.5
5
5.5
SupplyVOLTAGE
Voltage : :VVININ[V]
[V]
SUPPLY
6
-50
Figure 18. /OC Output Low Voltage
vs Supply Voltage
100
Figure 19. /OC Output Low Voltage
vs Ambient Temperature
4.0
1.0
UVLO
HYSTERESIS
VOLTAGE:V
UVLO
Hysteresis Voltage
: VHYSHSY
[V][V]
Threshold: V: TUVH
VTUVL
[V]
UVLOUVLO
THRESHOLD
,V
TUVL[V]
0
50
AMBIENT
: Ta[℃]
AmbientTEMPERATURE
Temperature ; Ta[°C]
3.9
3.8
VTUVH
3.7
VTUVL
3.6
3.5
0.8
0.6
0.4
0.2
0.0
-50
0
50
AMBIENT
TEMPERATURE
: Ta[℃]
Ambient Temperature ; Ta[°C]
100
-50
Figure 20. UVLO Threshold vs
Ambient Temperature
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0
50
AMBIENT TEMPERATURE : Ta[℃]
Ambient Temperature ; Ta[°C]
100
Figure 21. UVLO Hysteresis Voltage
vs Ambient Temperature
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Datasheet
BD82030FVJ
Typical Performance Curves - continued
1.0
1.0
Ta=25°C
VIN=5.0V
0.8
Output
: T[ms]
ON1[ms]
RISERise
TIMETime
: TON1
Output
: T[ms]
ON1[ms]
RISERise
TIMETime
: TON1
0.8
0.6
0.4
0.6
0.4
0.2
0.2
0.0
0.0
4
4.5
5
5.5
SUPPLY
VOLTAGE
: V[V]
IN [V]
Supply Voltage
: VIN
6
-50
Figure 22. Output Rise Time vs
Supply Voltage
100
Figure 23. Output Rise Time vs
Ambient Temperature
1.0
1.0
Ta=25°C
VIN=5.0V
0.8
Output
On Time
: T[ms]
ON2[ms]
TURNTurn
ON TIME
: TON2
Output
On Time
: T[ms]
ON2[ms]
TURNTurn
ON TIME
: TON2
0
50
AMBIENT
TEMPERATURE
: Ta[℃]
Ambient Temperature ; Ta[°C]
0.6
0.4
0.2
0.0
0.8
0.6
0.4
0.2
0.0
4
4.5
5
5.5
Supply Voltage
: VIN: V[V]
SUPPLY
VOLTAGE
IN [V]
6
-50
Figure 24. Output Turn-on Time vs
Supply Voltage
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0
50
AMBIENT
: Ta[℃]
AmbientTEMPERATURE
Temperature ; Ta[°C]
100
Figure 25. Output Turn-on Time vs
Ambient Temperature
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Datasheet
BD82030FVJ
Typical Performance Curves - continued
5.0
5.0
VIN=5.0V
Ta=25°C
4.0
Output
Time
: TOFF1
FALL Fall
TIME
: TOFF1
[µs][µs]
Output
Time
: TOFF1
FALL Fall
TIME
: TOFF1
[µs][µs]
4.0
3.0
2.0
1.0
3.0
2.0
1.0
0.0
0.0
4
4.5
5
5.5
[V]
SUPPLY
VOLTAGE
:
V
IN
Supply Voltage : VIN [V]
6
-50
Figure 26. Output Fall Time vs
Supply Voltage
100
Figure 27. Output Fall Time vs
Ambient Temperature
5.0
5.0
VIN=5.0V
Ta=25°C
4.0
Output
Time
TOFF2
[µs]
TURNTurn-off
OFF TIME
: T:OFF2
[µs]
Output Turn-off Time : TOFF2[µs]
TURN OFF TIME : TOFF2 [µs]
0
50
AMBIENT
TEMPERATURE
: Ta[℃]
Ambient Temperature ; Ta[°C]
3.0
2.0
1.0
4.0
3.0
2.0
1.0
0.0
0.0
4
4.5
5
5.5
SUPPLY
VOLTAGE
: V[V]
IN [V]
Supply Voltage
: VIN
-50
6
Figure 28. Output Turn-off Time vs
Supply Voltage
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0
50
AMBIENT
TEMPERATURE
: Ta[℃]
Ambient Temperature ; Ta[°C]
100
Figure 29. Output Turn-off Time vs
Ambient Temperature
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Datasheet
BD82030FVJ
Typical Performance Curves - continued
15
15
Ta=25°C
VIN=5.0V
12
/OCDDLAY
Delay Time
/OC
TIME: :TT/OC
[ms]
/OC[ms]
/OCDDLAY
Delay Time
/OC
TIME: :TT/OC
[ms]
/OC[ms]
12
9
6
3
0
9
6
3
0
4
4.5
5
5.5
SUPPLY
VOLTAGE
: V[V]
IN [V]
Supply Voltage
: VIN
6
-50
Figure 30. /OC Delay Time vs
Supply Voltage
100
Figure 31. /OC Delay Time vs
Ambient Temperature
200
200
Ta=25°C
VIN=5.0V
Disc On Resistance: RDISC[Ω]
DISC ON RESISTANCE : R DISC [Ω ]
Disc
Resistance: R
[Ω][Ω]
DISC
DISC
ONOn
RESISTANCE
:R
DISC
0
50
AMBIENT
TEMPERATURE
: Ta[℃]
Ambient Temperature ; Ta[°C]
150
100
50
0
150
100
50
0
4
4.5
5
5.5
SUPPLY
VOLTAGE
:
VIN[V]
Supply Voltage : VIN [V]
6
Figure 32. Discharge On Resistance
vs Supply Voltage
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-50
0
50
AMBIENT
TEMPERATURE
: Ta[℃]
Ambient Temperature ; Ta[°C]
100
Figure 33. Discharge On Resistance vs
Ambient Temperature
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Datasheet
BD82030FVJ
Typical Wave Forms（BD82030FVJ）
VEN
(5V/div.)
VEN
(5V/div.)
V/OC
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
VOUT
(5V/div.)
IIN
(0.5A/div.)
IIN
(0.5A/div.)
VIN=5V
RL=10Ω
VIN=5V
RL=10Ω
TIME(0.5ms/div.)
Figure 34. Output Rise Characteristic
TIME(1μs/div.)
Figure 35. Output Fall Characteristic
VEN
(5V/div.)
V/OC
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
CL=100µF
CL=220µF
CL=47µF
VOUT
(5V/div.)
CL=100µF
CL=220µF
IIN
(1.0A/div.)
IIN
(1.0A/div.)
CL=47µF
VIN=5V
RL=10Ω
VIN=5V
CL=100μF
TIME(5ms/div.)
Figure 37. Over-Current Response
Ramped Load
TIME(0.5ms/div.)
Figure 36. Inrush Current Response
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Datasheet
BD82030FVJ
Typical Wave Forms（BD82030FVJ）
VIN=5V
CL=100μF
VEN
(5V/div.)
V/OC
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
VOUT
(5V/div.)
IIN
(1.0A/div.)
IIN
(1.0A/div.)
VIN=5V
CL=100μF
TIME(5ms/div.)
Figure 39. Over-Current Response
1ΩLoad Connected at Enable
TIME(20ms/div.)
Figure 38. Over-Current Response
Enable to Shortcircuit
VIN
(5V/div.)
VIN
(5V/div.)
VOUT
(5V/div.)
VOUT
(5V/div.)
IIN
(0.5A/div.)
IIN
(0.5A/div.)
RL=10Ω
RL=10Ω
TIME(10ms/div.)
Figure 40. UVLO Response
Increasing VIN
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TIME(10ms/div.)
Figure 41. UVLO Response
Decreasing VIN
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Datasheet
BD82030FVJ
Typical Application Circuit
5V(Typ.)
IN
Regulator
OUT
USB
Controller
10kΩ to
100kΩ
CIN
GND
OUT
IN
OUT
IN
OUT
VBUS
+
CL -
D+
DGND
EN(/EN) /OC
Figure 42. Typical Application Circuit
Application Information
When excessive current flows due to output short-circuit or overload ringing occurs because of inductance between power
source line and IC. This may cause bad effects on IC operations. In order to avoid this case, connect a bypass capacitor
CIN across IN terminal and GND terminal of IC. 1μF or higher is recommended. In order to decrease voltage fluctuations of
power source line to IC, connect a low ESR capacitor in parallel with CIN. 10μF to 100μF or higher is recommended.
Pull up /OC output via resistance value of 10kΩ to 100kΩ.
Set up a value for CL which satisfies the application.
This system connection diagram does not guarantee operation as the intended application.
When using the circuit with changes to the external circuit values, make sure to leave an adequate margin for external
components including static and transitional characteristics as well as the design tolerances of the IC.
Functional Description
1. Switch Operation
IN terminal and OUT terminal are connected to the drain and the source of switch MOSFET respectively. The IN terminal
is also used as power source input to internal control circuit.
When the switch is turned on from EN control input, the IN terminal and OUT terminal are connected by a 72mΩ(Typ)
switch. In ON status, the switch is bidirectional. Therefore, when the potential of OUT terminal is higher than that of the IN
terminal, current flows from OUT terminal to IN terminal.
Since the parasitic diode between the drain and the source of switch MOSFET is canceled current flow from OUT to IN is
prevented during off state.
2. Thermal Shutdown Circuit (TSD)
If over current would continue, the temperature of the IC would increase drastically. If the junction temperature reaches
beyond 135℃(Typ) during the condition of over current detection, thermal shutdown circuit operates and turns power
switch off and outputs an error flag (/OC). Then, when the junction temperature decreases below 115℃(Typ), power
switch is turned on and error flag (/OC) is cancelled. Unless the cause of the increase of the chip’s temperature is
removed or the output of power switch is turned off, this operation repeats.
The thermal shutdown circuit operates when the switch is on (EN signal is active).
3. Over Current Detection (OCD)
The over current detection circuit (OCD) limits current (ISC) and outputs error flag (/OC) when current flowing in each
switch MOSFET exceeds a specified value. There are three cases when the OCD circuit is activated. The OCD operates
when the switch is on (EN signal is active).
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(1) When the switch is turned on while the output is in short-circuit status, the switch gets in current limit status
immediately.
(2) When the output short-circuits or when high current load is connected while the switch is on, very large current
will flow until the over-current limit circuit reacts. When this happens, the over-current limit circuit is activated
and the current limitation is carried out.
(3) When the output current increases gradually, current limitation does not work until the output current exceeds
the over-current detection value. When it exceeds the detection value, current limitation is carried out.
4. Under-Voltage Lockout (UVLO)
UVLO circuit prevents the switch from turning on until VIN exceeds 3.7V(Typ). If VIN drops below 3.6V(Typ) while the
switch is still on, then the UVLO will shut off the power switch. UVLO has a hysteresis of 100mV(Typ).
Under-voltage lockout circuit works when the switch is on (EN signal is active).
5. Error Flag (/OC) Output
Error flag output is an N-MOS open drain output. Upon detection of over current or thermal shutdown, the output level
becomes low.
Over-current detection has a delay filter. This delay filter prevents current detection flags from being sent during
instantaneous events such as surge current due to switching or hot plug.
6. Output Discharge Function
When the switch is turned off from disable control input or UVLO function, the 55Ω(Typ.) discharge circuit between OUT
and GND turns on. By turning on this switch, electric charge at capacitive load is discharged. But when the voltage of IN
declines extremely, then the OUT pin becomes Hi-Z without UVLO function.
V EN
Output shortcircuit
V OUT
Thermal shut down
IO UT
V /OC
delay
Figure 43. Over-Current Detection, Thermal Shutdown Timing
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Power Dissipation
The power dissipation depends on output load, ambient temperature and PCB layout. The devices have current capacity of
1.0A respectively. Power dissipation can be calculated using the output current and the RON of the power switch as below.
Pd = RON x IOUT2
The derating curve is shown below
TSSOP-B8J
(MSOP-8 JEDEC standard)
1.2
4 layer board mounting
1.0
Power Dissipation : Pd [W]
0.96W
2 layer board mounting
0.8
0.75W
0.6
0.58W
0.4
0.2
1 layer board mounting
0.0
0
25
50
75
100
125
150
Ambient Temperature : Ta [℃]
Note: IC is Mounted on 70mmx70mmx1.6mm glass-epoxy PCB.
Derating is 4.7mW/℃ above Ta=25℃.
Figure 44. Power Dissipation Curve (Pd-Ta Curve)
I/O Equivalent Circuit
Symbol
EN(/EN)
Pin No.
4
Equivalent Circuit
EN
(/EN)
/OC
/OC
5
OUT
6,7,8
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Operational Notes
1.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.
2.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
4.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
Thermal Consideration
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in
deterioration of the properties of the chip. The absolute maximum rating of the Pd stated in this specification is when
the IC is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. In case of exceeding this absolute maximum
rating, increase the board size and copper area to prevent exceeding the Pd rating.
6.
Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.
The electrical characteristics are guaranteed under the conditions of each parameter.
7.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush
current may flow instantaneously due to the internal powering sequence and delays, especially if the IC
has more than one power supply. Therefore, give special consideration to power coupling capacitance,
power wiring, width of ground wiring, and routing of connections.
8.
9.
Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
10. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
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Operational Notes – continued
11. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the
power supply or ground line.
12. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should
be avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
C
E
Pin A
N
P
P
+
+
N
N
P
N
Pin B
B
Parasitic
Elements
N
P+
N P
N
P+
B
N
C
E
Parasitic
Elements
P Substrate
P Substrate
GND
GND
Parasitic
Elements
GND
GND
Parasitic
Elements
N Region
close-by
Figure 45. Example of monolithic IC structure
13. Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
14. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction
temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below
the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
15. Thermal design
Perform thermal design in which there are adequate margins by taking into account the power dissipation (Pd) in actual states of
use.
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Ordering Information
B
D
8
2
0
3
0
F
Over- Current
Threshold
Part
Number
V
J
-
Package
FVJ: TSSOP-B8J
(MSOP-8 Jedec)
and
G
E2
Packaging and forming
specification
E2: Embossed tape and reel
G:
Halogen
free
package
Control Logic
Lineup
Over-Current Threshold
Control Logic
Part Number
1.5A
Active- High
BD82030FVJ
Marking Diagram
TSSOP-B8J(TOP VIEW)
Part Number Marking
D 8 2
Part Number
Marking
BD82030FVJ
030
LOT Number
1PIN MARK
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Physical Dimension, Tape and Reel Information
Package Name
TSSOP-B8J
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
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Revision History
Date
Revision
5.SEP.2012
001
11.DEC.2012
002
18.SEP.2013
003
29.JAN.2014
004
Changes
New Release
UL・CB recognized.
Improved grammar and presentation
Revised derating of Power Dissipation
Delete Marking Information
Add Caution of page3 and Discharge function in Functional Description and Figure 16, 17.
Revised Power Dissipation decimal and Operational Notes
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Datasheet
Notice
Precaution on using ROHM Products
1.
Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
(Note 1)
, transport
intend to use our Products in devices requiring extremely high reliability (such as medical equipment
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice – GE
© 2013 ROHM Co., Ltd. All rights reserved.
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Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice – GE
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Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
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