IR & PHOTO 36 INFRARED EMITTING DIODE 37PHOTOTRANSISTOR 38 SMD INFRARED EMITTING DIODE 39 SMD PHOTOTRANSISTOR INFRARED EMITTING DIODE Part Number Chip Structure www.SunLED.com Po(mW/sr) IF=20mA*50mA lpeak (nm) Min. Typ. 3 *8 3 *8 3 *5 3 *5 8 *15 8 *15 8 *15 12 *15 7 *14 7 *14 15 *19 15 *19 15 *49 15 *49 15 *49 44 *49 8 *25 8 *25 6 *12 6 *12 18 *55 18 *55 12 *40 12 *40 19 *49 19 *49 14 *24 14 *24 39 *98 39 *98 29 *89 29 *89 Viewing Angle 2θ1/2 Lens 50° Water Clear 50° Blue Transparent 50° Water Clear 50° Blue Transparent 50° Water Clear 50° Blue Transparent 50° Water Clear 50° Blue Transparent 20° Water Clear 20° Blue Transparent 20° Water Clear 20° Blue Transparent 20° Water Clear 20° Blue Transparent 20° Water Clear 20° Blue Transparent 36 INFRARED EMITTING DIODE IR & PHOTO 3mm TNI30W GaAs 940 TNI30BF GaAs 940 THI30W GaAlAs 880 THI30BF GaAlAs 880 THI30W860 GaAlAs 860 THI30BF860 GaAlAs 860 THI30W850 GaAlAs 850 THI30BF850 GaAlAs 850 TNI12W GaAs 940 TNI12BF GaAs 940 THI12W GaAlAs 880 THI12BF GaAlAs 880 THI12W860 GaAlAs 860 THI12BF860 GaAlAs 860 THI12W850 GaAlAs 850 THI12BF850 GaAlAs 850 5mm 1. Dimension Unit: mm(inches), Tolerance: ±0.25mm (0.01"). 2. Radiant intensity value and wavelength are in accordance with CIE127-2007 standards. 3. We reserve the right to make changes at any time to enhance the design and / or performance of the product. PHOTOTRANSISTOR www.SunLED.com Part Number Lens Description Water Clear 3mm 3mm RNI30W-1 Electrical & Radiant Characteristics Ta =25°C Symbol Parameter Min. Typ. Max. Unit Test Condition VCE=5V, Ee=1mW/cm2 l=940nm I (ON) On State Collector Current 0.3 0.8 - mA VBR CEO Collector-to-Emitter Breakdown Voltage 30 - - V IC=100mA Ee=0mW/cm2 VBR ECO Emitter-to-Collector Breakdown Voltage 5 - - V IE=100mA Ee=0mW/cm2 VCE (SAT) Collector-to-Emitter Saturation Voltage - - 0.8 V IC=2mA Ee=20mW/cm2 ICEO Collector Dark Current - - 100 nA VCE=10V Ee=0mW/cm2 TR Rise Time (10% to 90%) - 15 - ms VCE=5V IC=1mA RL=1KW TF Fall Time (90% to 10%) - 15 - ms VCE=5V IC=1mA RL=1KW Absolute Maximum Rating Ta =25°C Collector-to-Emitter Voltage 30V Operating Temperature Range -40°C ~ +85°C Emitter-to-Collector Voltage 5V Storage Temperature Range -40°C ~ +85°C Power Dissipation at (or below) 25°C Free Air Temperature 100mW Lead Soldering Temperature(>5mm For 5sec) 260°C Description Water Clear 5mm 5mm RNI12W IR & PHOTO Lens PHOTOTRANSISTOR Part Number Electrical & Radiant Characteristics Ta =25°C Symbol Parameter Min. Typ. Max. Unit Test Condition VCE=5V, Ee=1mW/cm2 l=940nm I (ON) On State Collector Current 0.5 2.5 - mA VBR CEO Collector-to-Emitter Breakdown Voltage 30 - - V IC=100mA Ee=0mW/cm2 VBR ECO Emitter-to-Collector Breakdown Voltage 5 - - V IE=100mA Ee=0mW/cm2 VCE (SAT) Collector-to-Emitter Saturation Voltage - - 0.8 V IC=2mA Ee=20mW/cm2 ICEO Collector Dark Current - - 100 nA VCE=10V Ee=0mW/cm2 TR Rise Time (10% to 90%) - 15 - ms VCE=5V IC=1mA RL=1KW TF Fall Time (90% to 10%) - 15 - ms VCE=5V IC=1mA RL=1KW Absolute Maximum Rating Ta =25°C Collector-to-Emitter Voltage 30V Operating Temperature Range -40°C ~ +85°C Emitter-to-Collector Voltage 5V Storage Temperature Range -40°C ~ +85°C Power Dissipation at (or below) 25°C Free Air Temperature 100mW Lead Soldering Temperature(>5mm For 5sec) 260°C 1. Dimension Unit: mm(inches), Tolerance: ±0.25mm (0.01"). 2. We reserve the right to make changes at any time to enhance the design and / or performance of the product. 37 SMD INFRARED EMITTING DIODE Part Number Chip Structure www.SunLED.com lpeak (nm) Po(mW/sr) IF=20mA Viewing Angle 2θ1/2 Min. Typ. 940 880 0.8 0.8 1.8 1.3 120° 120° 940 880 0.8 0.8 1.8 1.3 120° 120° 940 880 1.2 1 2.3 2.3 30° 30° 940 880 2 1.6 4.8 3.8 35° 35° 940 880 1.2 1.2 2.3 1.8 120° 120° Lens 1.6x0.8x1.1mm (0603) Dimension Unit: mm(inches), Tolerance : ±0.1(0.004") ZTNI53W ZTHI53W GaAs GaAlAs Recommended Soldering Pattern Water Clear Water Clear 2.0x1.25x1.1mm (0805) Dimension Unit: mm(inches), Tolerance : ±0.1(0.004") ZTNI54W ZTHI54W GaAs GaAlAs Recommended Soldering Pattern Water Clear Water Clear SMD INFRARED EMITTING DIODE IR & PHOTO 3.0x1.0x2.5mm (1104 Right Angle) Dimension Unit: mm(inches), Tolerance: ±0.15mm (0.006") ZTNI56W-1 ZTHI56W-1 GaAs GaAlAs Recommended Soldering Pattern Water Clear Water Clear 3.2x1.6x1.8mm (1206 Dome Lens) Dimension Unit: mm(inches), Tolerance : ±0.2(0.008") ZTNI55W-3 ZTHI55W-3 GaAs GaAlAs Recommended Soldering Pattern Water Clear Water Clear 3.5x2.8x1.9mm (PLCC2) Dimension Unit: mm(inches), Tolerance: ±0.25mm (0.01") ZTNI45S ZTHI45S 38 GaAs GaAlAs Recommended Soldering Pattern 1. Dimension Unit: mm(inches), Tolerance: ±0.25mm (0.01"). 2. Radiant intensity value and wavelength are in accordance with CIE127-2007 standards. 3. We reserve the right to make changes at any time to enhance the design and / or performance of the product. Water Clear Water Clear SMD PHOTOTRANSISTOR www.SunLED.com Part Number Lens Description 3.0x1.0x2.5mm (1104 Right Angle) Dimension Unit: mm(inches), Tolerance: ±0.15mm (0.006") ZRNI56W-1 Recommended Soldering Pattern Water Clear 3.0x1.0x2.5mm 3.2x1.6x1.8mm (1206 Dome Lens) Dimension Unit: mm(inches), Tolerance : ±0.2(0.008") ZRNI55W-3 Recommended Soldering Pattern Water Clear 3.2x1.6x1.8mm 3.5x2.8x1.9mm (PLCC2) 3.5x2.8x1.9mm Electrical & Radiant Characteristics Ta =25°C Symbol I (ON) Parameter On State Collector Current Part Number Min. Typ. ZRNI56W-1 0.2 0.5 ZRNI55W-3 0.4 1 ZRNI45S 0.2 0.4 Max. Unit - mA Test Condition IR & PHOTO Recommended Soldering Pattern Water Clear SMD PHOTOTRANSISTOR Dimension Unit: mm(inches), Tolerance: ±0.25mm (0.01") ZRNI45S VCE=5V, Ee=1mW/cm2 l=940nm VBR CEO Collector-to-Emitter Breakdown Voltage - 30 - - V IC=100mA Ee=0mW/cm2 VBR ECO Emitter-to-Collector Breakdown Voltage - 5 - - V IE=100mA Ee=0mW/cm2 VCE (SAT) Collector-to-Emitter Saturation Voltage - - - 0.8 V IC=2mA Ee=20mW/cm2 ICEO Collector Dark Current - - - 100 nA VCE=10V Ee=0mW/cm2 TR Rise Time (10% to 90%) - - 15 - ms VCE=5V IC=1mA RL=1KW TF Fall Time (90% to 10%) - - 15 - ms VCE=5V IC=1mA RL=1KW Absolute Maximum Rating Ta =25°C Collector-to-Emitter Voltage 30V Operating Temperature Range -40°C ~ +85°C Emitter-to-Collector Voltage 5V Storage Temperature Range -40°C ~ +85°C Power Dissipation at (or below) 25°C Free Air Temperature 100mW 1. Soldering Pattern Dimension Unit : mm Tolerance : ±0.1mm. 2. We reserve the right to make changes at any time to enhance the design and / or performance of the product. 39