IMD8A Transistors Digital Transistor (Dual Digital Transistors for Inverter Drive) IMD8A (6) 0.95 0.95 1.9 2.9 (1) (2) (3) (5) (4) (4) (5) zCircuit diagram (6) zExternal dimensions (Unit : mm) 0.3 zFeatures 1) Both the DTA144T chip and DTC144T chip in a SMT package. 1.6 R1 0.3to0.6 0to0.1 DTr2 R1 (3) (2) (1) 1.1 0.8 0.15 2.8 DTr1 Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 R1=47kΩ zPackage, marking, and packaging specifications Type IMD8A Package Marking Code SMT6 D8 T108 Basic ordering unit (pieces) 3000 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol Limits Unit VCBO VCEO 50 50 V V VEBO IC 5 100 V mA Pc 300(TOTAL) mW Tj Tstg 150 −55 to +150 °C °C ∗ ∗ 200mW per element must not be exceeded. PNP type negative symbols have been omitted. zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Input resistance Symbol Min. Typ. Max. Unit BVCBO BVCEO 50 50 − − − − V V IC=50µA IC=1mA Conditions BVEBO ICBO 5 − − − 0.5 V − µA IE=50µA VCB=50V VEB=4V IEBO − − 0.5 µA VCE(sat) hFE − − 0.3 V IC=5mA , IB=0.5mA 100 250 600 − VCE=5V , IC=1mA fT ∗ R1 − 32.9 250 47 − 61.1 MHz kΩ VCE=10V , IE= −5mA , f=100MHz − PNP type negative symbols have been omitted. ∗Characteristics of bult-in transistor. Rev.A 1/2 IMD8A Transistors 1k VCE=5V DC CURRENT GAIN : hFE 500 200 100 Ta=100°C 25°C −40°C 50 20 10 5 2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristic curves DTr1 1 lC/lB=10 500m 200m Ta=100°C 25°C −40°C 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current Fig.2 Collector-emitter saturation voltage vs. collector current 1k VCE=−5V DC CURRENT GAIN : hFE 500 200 100 50 Ta=100°C 25°C −40°C 20 10 5 2 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DTr2 −1 lC/lB=10 −500m −200m −100m Ta=100°C 25°C −40°C −50m −20m −10m −5m −2m −1m −10µ −20µ −50µ −100µ −200µ −500µ −1m −2m −5m −10m COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.3 DC current gain vs.collector current Fig.4 Collector-emitter saturation voltage vs.collector current Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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