Data Sheet NESG2021M05 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • This device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz ⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz • Maximum stable power gain: MSG = 22.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V • Flat-lead 4-pin thin-type super minimold (M05) package <R> ORDERING INFORMATION Part Number Order Number NESG2021M05 NESG2021M05-A NESG2021M05-T1 NESG2021M05-T1-A Remark Package Quantity Supplying Form Flat-lead 4-pin thintype supper minimold (M05, 2012 PKG) (Pb-Free) 50 pcs (Non reel) 3 kpcs/reel • 8 mm wide embossed taping • Pin 3 (Collector), Pin 4 (Emitter) face the perforation side of the tape To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Note: Symbol VCBO VCEO VEBO IC Ptot Note Tj Tstg Ratings 13.0 5.0 1.5 35 175 150 −65 to +150 Unit V V V mA mW °C °C Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 Page 1 of 12 NESG2021M05 <R> ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure (1) Symbol ICBO IEBO hFE Note 1 fT ⏐S21e⏐2 NF Noise Figure (2) NF Associated Gain (1) Ga Associated Gain (2) Ga Reverse Transfer Capacitance Maximum Stable Power Gain Gain 1 dB Compression Output Power 3rd Order Intermodulation Distortion Output Intercept Point Cre Note 2 MSG Note 3 PO (1 dB) OIP3 Test Conditions MIN. TYP. MAX. Unit VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 2 V, IC = 5 mA − − 130 − − 190 100 100 260 nA nA − VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 2 V, IC = 3 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 3 mA, f = 5.2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 3 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 3 mA, f = 5.2 GHz, ZS = ZSopt, ZL = ZLopt VCB = 2 V, IE = 0, f = 1 MHz VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 12 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt 20 17.0 25 19.0 − − GHz dB − 0.9 1.2 dB − 1.3 − dB 15.0 18.0 − dB − 10.0 − dB − 20.0 0.1 22.5 0.2 − pF dB − 9.0 − dBm VCE = 3 V, IC = 12 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt − 17.0 − dBm Notes: 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION <R> Rank Marking hFE Value FB/YFB T1G 130 to 260 R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 Page 2 of 12 NESG2021M05 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation Ptot (mW) 250 Mounted on Glass Epoxy PCB (1.08 cm2 × 1.0 mm (t) ) 200 175 150 100 50 0 75 100 125 150 0.2 0.1 0 2 4 6 8 10 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 1 V Collector Current IC (mA) 0.1 0.01 0.001 0.5 0.6 0.7 0.8 0.9 1.0 VCE = 2 V 10 1 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 35 VCE = 3 V 200 μ A 180 μ A 160 μ A 140 μ A 120 μ A 30 10 1 0.1 0.01 0.001 0.0001 0.4 f = 1 MHz Collector to Base Voltage VCB (V) 1 100 0.3 Ambient Temperature TA (˚C) 10 0.0001 0.4 Collector Current IC (mA) 50 Collector Current IC (mA) Collector Current IC (mA) 100 25 Reverse Transfer Capacitance Cre (pF) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 25 20 100 μ A 15 80 μ A 10 60 μ A 40 μ A 5 IB = 20 μ A 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) 0 1 2 3 4 5 6 Collector to Emitter Voltage VCE (V) Remark The graph indicates nominal characteristics. R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 Page 3 of 12 NESG2021M05 DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 1 000 100 10 0.1 VCE = 2 V DC Current Gain hFE DC Current Gain hFE VCE = 1 V 1 10 100 100 10 0.1 1 10 100 Collector Current IC (mA) Collector Current IC (mA) DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 DC Current Gain hFE VCE = 3 V 100 10 0.1 1 10 100 Collector Current IC (mA) Remark The graph indicates nominal characteristics. R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 Page 4 of 12 NESG2021M05 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Gain Bandwidth Product fT (GHz) 20 15 10 5 0 1 Gain Bandwidth Product fT (GHz) 30 25 10 10 5 10 100 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 15 10 5 0 1 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 15 Collector Current IC (mA) 20 10 100 40 VCE = 1 V IC = 10 mA 35 30 MSG MAG 25 20 15 |S21e|2 10 5 0 0.1 1 10 100 Collector Current IC (mA) Frequency f (GHz) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 40 VCE = 2 V IC = 10 mA 35 MSG MAG 25 20 |S21e|2 15 10 5 0 0.1 20 Collector Current IC (mA) VCE = 3 V f = 2 GHz 30 25 VCE = 2 V f = 2 GHz 0 1 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 30 VCE = 1 V f = 2 GHz 1 10 100 Frequency f (GHz) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Gain Bandwidth Product fT (GHz) 30 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 40 VCE = 3 V IC = 10 mA 35 30 MSG MAG 25 20 |S21e|2 15 10 5 0 0.1 1 10 100 Frequency f (GHz) Remark The graph indicates nominal characteristics. R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 Page 5 of 12 NESG2021M05 25 VCE = 1 V f = 1 GHz MSG MAG 20 |S21e|2 15 10 5 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 VCE = 1 V f = 2 GHz MSG MAG 20 15 |S21e|2 10 5 0 1 10 100 Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT 30 25 VCE = 1 V f = 3 GHz MSG 20 MAG 15 10 |S21e| 5 0 1 2 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Collector Current IC (mA) 25 20 VCE = 1 V f = 5 GHz 15 MAG 10 5 |S21e|2 0 –5 1 10 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 VCE = 2 V f = 1 GHz MSG 20 MAG |S21e|2 15 10 5 0 1 10 100 Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 VCE = 2 V f = 2 GHz MSG MAG 20 15 |S21e|2 10 5 0 1 10 100 Collector Current IC (mA) Remark The graph indicates nominal characteristics. R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 Page 6 of 12 NESG2021M05 25 VCE = 2 V f = 3 GHz MSG MAG 20 15 10 |S21e|2 5 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) 30 INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT 30 25 VCE = 2 V f = 5 GHz 20 MAG 15 10 |S21e|2 5 0 1 10 100 Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 VCE = 3 V f = 1 GHz MSG 20 MAG |S21e|2 15 10 5 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Collector Current IC (mA) 30 25 VCE = 3 V f = 2 GHz MSG MAG 20 |S21e|2 15 10 5 0 1 10 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT 30 25 VCE = 3 V f = 3 GHz MSG MAG 20 15 |S21e| 2 10 5 0 1 10 100 Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 VCE = 3 V f = 5 GHz 20 MAG 15 10 |S21e|2 5 0 1 10 100 Collector Current IC (mA) Remark The graph indicates nominal characteristics. R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 Page 7 of 12 NESG2021M05 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 20 50 20 10 30 5 20 IC 10 0 –15 –10 –5 0 0 Pout 5 10 0 –5 –20 –15 –10 –5 0 5 0 Input Power Pin (dBm) OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 50 Pout 10 30 5 20 IC 10 0 –15 –10 –5 0 0 Input Power Pin (dBm) Output Power Pout (dBm) 40 Collector Current IC (mA) VCE = 3 V, f = 5.2 GHz Icq = 12 mA (RF OFF) 15 –20 50 20 VCE = 3 V, f = 3 GHz Icq = 12 mA (RF OFF) Output Power Pout (dBm) 20 IC Input Power Pin (dBm) 20 –5 –25 30 10 40 15 Pout 10 30 5 20 IC 10 0 –5 –20 –15 –10 –5 0 Collector Current IC (mA) –20 40 15 Collector Current IC (mA) Pout Output Power Pout (dBm) 40 15 –5 –25 50 VCE = 3 V, f = 2 GHz Icq = 12 mA (RF OFF) Collector Current IC (mA) Output Power Pout (dBm) VCE = 3 V, f = 1 GHz Icq = 12 mA (RF OFF) 0 5 Input Power Pin (dBm) Remark The graph indicates nominal characteristics. R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 Page 8 of 12 NESG2021M05 4 20 3 15 2 10 NF 1 5 3 15 2 10 NF 0 1 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 30 25 Ga 20 3 15 2 10 5 6 30 VCE = 2 V f = 2 GHz 5 Noise Figure NF (dB) VCE = 1 V f = 2 GHz 1 1 25 Ga 4 20 3 15 2 10 1 5 NF NF 0 0 100 10 1 0 100 10 Collector Current IC (mA) Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 12 14 8 8 6 6 4 4 1 10 12 12 10 NF VCE = 2 V f = 5.2 GHz Ga 10 2 14 Noise Figure NF (dB) VCE = 1 V f = 5.2 GHz Ga Associated Gain Ga (dB) 14 Noise Figure NF (dB) 0 100 10 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 4 0 5 Collector Current IC (mA) 5 Noise Figure NF (dB) 20 Collector Current IC (mA) 6 0 25 4 1 0 100 10 Ga 12 10 10 8 8 6 6 4 4 2 2 0 100 0 Collector Current IC (mA) 14 NF 1 Associated Gain Ga (dB) 1 30 VCE = 2 V f = 1 GHz 5 Noise Figure NF (dB) 25 Associated Gain Ga (dB) Ga Associated Gain Ga (dB) Noise Figure NF (dB) 5 0 6 30 VCE = 1 V f = 1 GHz Associated Gain Ga (dB) 6 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT Associated Gain Ga (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 2 10 0 100 Collector Current IC (mA) Remark The graph indicates nominal characteristics. R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 Page 9 of 12 NESG2021M05 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 6 Ga Noise Figure NF (dB) 5 25 4 20 3 15 2 10 1 0 5 NF 1 Associated Gain Ga (dB) 30 VCE = 3 V f = 1 GHz 0 100 10 Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 6 Noise Figure NF (dB) 5 25 Ga 4 20 3 15 2 10 1 0 5 NF 1 Associated Gain Ga (dB) 30 VCE = 3 V f = 2 GHz 0 100 10 Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT VCE = 3 V f = 5.2 GHz Noise Figure NF (dB) 12 14 12 10 10 Ga 8 8 6 6 4 4 2 0 Associated Gain Ga (dB) 14 2 NF 1 10 0 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 Page 10 of 12 NESG2021M05 <R> S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [Products] → [RF Devices] → [Device Parameters] URL http://www.renesas.com/products/microwave/ R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 Page 11 of 12 NESG2021M05 PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG) (UNIT: mm) (Top View) (Bottom View) 2.05±0.1 1.25±0.1 2 1 4 0.30+0.1 –0.05 T1G (0.65) 0.65 1.30 3 (1.05) 2.0±0.1 0.11+0.1 –0.05 0.5 0.59±0.05 <R> PIN CONNENTION 1. Base 2. Emitter 3. Collector 4. Emitter Remark ( ) : Reference value R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 Page 12 of 12 Revision History NESG2021M05 Data Sheet Description Rev. − 3.00 Date Mar 2003 Jun 20, 2012 Page − Summary Previous No. : PU10188EJ02V0DS p.1 Modification of ORDERING INFORMATION p.2 Modification of ELECTRICAL CHARACTERISTICS Modification of hFE CLASSIFICATION p.11 Modification of S-PARAMETERS p.12 Modification of PACKAGE DIMENSIONS All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. 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