SSF3092G1 Main Product Characteristics: VDSS 30V RDS(on) 92mohm(typ.) ID 1.4A ① SOT23 Marking and pin Schematic diagram Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications Absolute max Rating: Symbol Parameter Max. ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 1.4① ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 1① IDM Pulsed Drain Current ② 8.4 PD @TC = 25°C Power Dissipation 0.62 W VDS Drain-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 V -55 to + 150 °C TJ TSTG Operating Junction and Storage Temperature Range Units A Thermal Resistance Symbol Characterizes RθJA Junction-to-ambient (t ≤ 10s) ③ ©Silikron Semiconductor CO.,LTD. 2015.01.23 www.silikron.com Typ. Max. Units — 200 ℃/W Preliminary Version: 1.0 page 1 of 6 SSF3092G1 Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source breakdown voltage 30 — — V RDS(on) Static Drain-to-Source on-resistance — 92 120 mΩ VGS=10V,ID = 1.4A RDS(on) Static Drain-to-Source on-resistance — 120 160 mΩ VGS=4.5V,ID=1.2A VGS(th) Gate threshold voltage 1 — 3 V IDSS Drain-to-Source leakage current — — 1 — — 50 IGSS Gate-to-Source forward leakage — — 100 — — -100 Qg Total gate charge — 1.3 — Qgs Gate-to-Source charge — 0.5 — Qgd Gate-to-Drain("Miller") charge — 0.5 — td(on) Turn-on delay time — 3 — tr Rise time — 5 — td(off) Turn-Off delay time — 20 — tf Fall time — 2 — Ciss Input capacitance — 135 — Coss Output capacitance — 30 — Crss Reverse transfer capacitance — 20 — μA nA Conditions VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VDS = 30V,VGS = 0V TJ = 125°C VGS =20V VGS = -20V ID = 1.4A, nC VDS=15V, VGS = 4.5V ns VGS=10V, VDS =15V, RGEN=6Ω,RL=15Ω, VGS = 0V, pF VDS =15V, ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage ©Silikron Semiconductor CO.,LTD. Min. Typ. Max. Units — — 1.4 ① A — — 8.4 A — 0.72 1.2 V 2015.01.23 www.silikron.com Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=1A, VGS=0V Preliminary Version: 1.0 page 2 of 6 SSF3092G1 Test circuits and Waveforms Switch Waveforms: Notes: ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max junction temperature. ③The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ④These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. ©Silikron Semiconductor CO.,LTD. 2015.01.23 www.silikron.com Preliminary Version: 1.0 page 3 of 6 SSF3092G1 Mechanical Data: ©Silikron Semiconductor CO.,LTD. 2015.01.23 www.silikron.com Preliminary Version: 1.0 page 4 of 6 SSF3092G1 Ordering and Marking Information Device Marking: 3092 Package (Available) SOT-23 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Units/ Tubes/Inner Type Tube Box SOT23 3000 10 Units/Inner Box 30000 Inner Units/Carton Boxes/Carton Box Box 4 120000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) Tj= 150℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=150℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices ©Silikron Semiconductor CO.,LTD. 2015.01.23 www.silikron.com Preliminary Version: 1.0 page 5 of 6 SSF3092G1 ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. 11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO.,LTD. 2015.01.23 www.silikron.com Preliminary Version: 1.0 page 6 of 6