SSF5508A
Main Product Characteristics:
VDSS
55V
RDS(on)
4.5mohm（Typ）
ID
110A
Features and Benefits:
SSF5508A TOP View (TO263)
Advanced trench MOSFET process technology
Special designed for convertors and power controls
Ultra low on-resistance
175℃ operating temperature
High Avalanche capability and 100% tested
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an
extremely efficient and reliable device for use in power switching application and a wide variety of other
applications
Absolute max Rating:
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
110
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
80
IDM
Pulsed Drain Current②
440
ISM
Pulsed Source Current.(Body Diode)
440
Power Dissipation③
205
W
Linear derating factor
2
W/ Cْ
VDS
Drain-Source Voltage
55
V
VGS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak diode recovery voltage
35
v/ns
EAS
Single Pulse Avalanche Energy @ L=0.3mH②
634
mJ
IAR
Avalanche Current @ L=0.3mH②
65
A
-55 to + 175
°C
PD @TC = 25°C
TJ
TSTG
Operating Junction and
Storage Temperature
Range
Units
A
Thermal Resistance
Symbol
Characterizes
Value
Unit
RθJC
Junction-to-case③
0.73
℃/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
50
℃/W
©Silikron Semiconductor CO.,LTD.
2011.01.12
www.silikron.com
Version : 3.6
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SSF5508A
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
BVDSS
RDS(on)
VGS(th)
IDSS
Parameter
Min.
Typ.
Max.
Units
55
60
—
V
—
4.5
6
mΩ
2
3.1
4
V
—
—
1
Drain-to-Source breakdown
voltage
Static Drain-to-Source
on-resistance
Gate threshold voltage
Drain-to-Source leakage
—
—
VGS = 0V,
ID = 250μA
VGS = 10V,
ID = 20A
VDS = VGS,
ID = 250μA
VDS = 55V,
VGS = 0V
μA
current
Conditions
10
VDS = 55V,
VGS = 0V,
TJ = 150°C
Gate-to-Source forward
IGSS
—
leakage
—
100
VGS =20V
nA
Gate-to-Source reverse
leakage
-100
—
—
VGS = -20V
Qg
Total gate charge
—
125
147
Qgs
Gate-to-Source charge
—
24
30
Qgd
Gate-to-Drain("Miller") charge
—
49
61
Qg(th)
Gate charge at shreshold
—
16
20
Vplateau
gate plateau voltage
—
4.7
6
td(on)
Turn-on delay time
—
20
—
tr
Rise time
—
19
—
td(off)
Turn-Off delay time
—
70
—
tf
Fall time
—
30
—
VGS=10V
Ciss
Input capacitance
—
5607
—
VGS = 0V,
Coss
Output capacitance
—
463
—
Crss
Reverse transfer capacitance
—
454
—
nC
ID=30A
VDD=30V
VGS=10V
V
VDD=30V
ns
pF
ID=2A ,RL=15Ω
RG=2.5Ω
VDS = 25V,
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Symbol
IS
Parameter
Maximum Body-Diode
Continuous Curren
Min.
Typ.
Max.
Units
—
110
—
A
Conditions
VSD
Diode Forward Voltage
—
0.77
1
V
IS=40A, VGS=0V
Trr
Reverse Recovery Time
—
36
—
ns
TJ = 25°C, IF =68A, ,
Qrr
Reverse Recovery Charge
—
57
—
nC
di/dt = 100A/μs
ton
Forward Turn-on Time
©Silikron Semiconductor CO.,LTD.
Intrinsic turn-on time is negligible
(turn-on is dominated by LS+LD)
2011.01.12
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Version : 3.6
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SSF5508A
Typical electrical and thermal characteristics
10V
90
6V
ID,drain to source current(A)
100
5V
7V
ID,drain current(A)
80
4.5V
70
60
50
4V
40
30
3.5V
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
100
VDS=VGS
90
80
70
60
50
40
30
125℃
20
25℃
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
5
VDS,drain to source voltage(V)
VGS,gate to source voltage(V)
Figure 1: Typical Output Characteristics
Figure 2: Typical Transfer Characteristics
Rdson,Drain-to-Source On Resistance(Normalized)
Rdson,Drain-to-Source On
Resistance(Normalized)
6
VGS=7V
5
4
VGS=10V
3
0
5
10
15
20
25
30
1.7
1.6
1.5
1.4
VGS=10V
1.3
ID=20A
1.2
VGS=7V
1.1
1
ID=20A
0.9
0.8
0
25
50
75
100
125
150
175
200
Tj,Junction Temperature(°C)
ID,drain current(A)
Figure 3: On-Resistance vs. Drain Current and
Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage
1.E+02
25
IS,source to drain current(A)
Rdson,Drain-to-Source On
Resistance(Normalized)
ID=20A
20
15
125℃
10
5
25℃
1.E+01
125℃
1.E+00
1.E-01
1.E-02
25℃
1.E-03
1.E-04
1.E-05
0
0
2
3
4
5
6
7
8
9
1 1.1 1.2
VSD,source to drain voltage(V)
VGS,gate to source voltage(V)
Figure 5: On-Resistance vs. Gate-Source Voltage
©Silikron Semiconductor CO.,LTD.
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
10
2011.01.12
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Figure 6: Body-Diode Characteristics
Version : 3.6
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SSF5508A
Typical electrical and thermal characteristics
Figure 7: Gate-Charge Characteristics Figure
Figure 8: Capacitance Characteristics
1000
ID,drain current(A)
10uS
Ron
limited
100
100uS
DC
10
1mS
10mS
Tj(max)=150℃
1
Tc=25℃
0.1
0.01
0.1
1
10
100
VDS,drain to source voltage(V)
Figure 9: Maximum Forward Biased Safe
Operating Area(⑤)
Junction-to-Case (⑤)
Figure 11: Power De-rating (③)
©Silikron Semiconductor CO.,LTD.
Figure 10: Single Pulse Power Rating
Figure 12: Current De-rating (③)
2011.01.12
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Version : 3.6
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SSF5508A
Typical electrical and thermal characteristics
Figure 13: Transient Thermal Impedance Curve
Switch Waveforms
Notes:①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature. EAS
starting,ID=65A.
③The power dissipation PD is based on max. junction temperature, using
junction-to-case thermal resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board
with 2oz. Copper, in a still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2011.01.12
www.silikron.com
Version : 3.6
page
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SSF5508A
TO-263 MECHANICAL DATA:
©Silikron Semiconductor CO.,LTD.
2011.01.12
www.silikron.com
Version : 3.6
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6of 6