SSFM3008L
30V N-Channel MOSFET
Main Product Characteristics
VDSS
30V
RDS(on)
5.0mohm(typ.)
ID
50A
SSFM3008L
SSFM3008
Marking and Pin
Features and Benefits
Schematic Diagram
Assignment
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
Description
It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve the high
cell density and reduces the on-resistance, fast switching and soft reverse recovery time. These features
combine to make this design an extremely efficient and reliable device for use in power switching application
and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
50
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
40
IDM
Pulsed Drain Current②
200
Power Dissipation③
100
W
Linear Derating Factor
0.55
W/°C
VDS
Drain-Source Voltage
30
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.1mH
100
mJ
IAS
Avalanche Current @ L=0.1mH
44
A
-55 to + 175
°C
PD @TC = 25°C
TJ
TSTG
www.goodark.com
Operating Junction and Storage Temperature Range
Page 1 of 7
A
Rev.1.0
SSFM3008L
30V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case③
—
1.5
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
45
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
20
℃/W
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
unless otherwise specified
Min.
Typ.
Max.
Units
Conditions
30
36.5
—
V
—
5.0
8
mΩ
VGS=10V,ID =20A
—
7.5
10
mΩ
VGS=4.5V,ID =10A
Gate threshold voltage
1
—
3
V
VDS = VGS, ID = 250μA
IDSS
Drain-to-Source leakage current
—
—
10
μA
VDS = 30V,VGS = 0V
IGSS
Gate-to-Source forward leakage
—
—
100
-100
—
—
Qg
Total gate charge
—
35
—
Qgs
Gate-to-Source charge
—
7.9
—
Qgd
Gate-to-Drain("Miller") charge
—
8.7
—
td(on)
Turn-on delay time
—
11.5
—
tr
Rise time
—
46.5
—
td(off)
Turn-Off delay time
—
25.8
—
tf
Fall time
—
6.5
—
Ciss
Input capacitance
—
2055
—
Coss
Output capacitance
—
356
—
Crss
Reverse transfer capacitance
—
226
—
nA
VGS = 0V, ID = 250μA
VGS =20V
VGS = -20V
VDS=15V,
nC
ID=20A,
VGS=10V
ns
VGS=10V, VDS=15V,
RGEN=3Ω, ID=20A
VGS = 0V
pF
VDS = 15V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
Parameter
Continuous Source Current
Min.
Typ.
Max.
Units
—
—
50
A
Conditions
MOSFET symbol
showing the
ISM
Pulsed Source Current
—
—
200
A
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.5
1.0
V
IS=1.0A, VGS=0V
trr
Reverse Recovery Time
—
12.4
—
ns
TJ = 25°C, IF =20A, di/dt
Qrr
Reverse Recovery Charge
—
11.7
—
nC
= 300A/μs
www.goodark.com
Page 2 of 7
Rev.1.0
SSFM3008L
30V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
www.goodark.com
Page 3 of 7
Rev.1.0
SSFM3008L
30V N-Channel MOSFET
Typical Electrical Characteristics
100
100
10V
4.5V
60
4V
40
3.5V
20
VDS=5V
80
ID,drain current(A)
7V
80
ID,drain current(A)
90
6V
70
60
50
40
30
20
125℃
10
25℃
0
0
0
1
2
3
4
0
5
0.5
VDS,drain to source voltage(V)
1.5
2
2.5
3
3.5
4
4.5
5
VGS,gate to source voltage(V)
Figure 1: Typical Output Characteristics
Figure 2: Typical Transfer Characteristics
1.E+02
IS,source to drain current(A)
30
Rdson,Drain-to-Source On
Resistance(Normalized)
1
ID=30A
25
20
125℃
15
10
25℃
5
0
2
3
4
5
6
7
8
9
10
1.E+01
125℃
1.E+00
1.E-01
1.E-02
25℃
1.E-03
1.E-04
1.E-05
0
VGS,gate to source voltage(V)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1
VSD,source to drain voltage(V)
Figure 4: Body-Diode Characteristics
Figure 3: On-Resistance vs. Gate-Source
Voltage
3000
9
2500
8
Capacitance (pF)
VGS,gate to source voltage(V)
10
7
6
5
VDS=15V
4
ID=20A
3
2
Ciss
2000
1500
VGS=0,F=1MHZ
Ciss=Cgd+Cgs, Cds shorted
1000
Coss=Cds+Cgd
Coss
Crss=Cgd
500
Crss
1
0
0
0
5
10
15
20
25
30
35
5
10
15
20
VDS, drain to source voltage(V)
QG,gate charge(nC)
Figure 6: Capacitance Characteristics
Figure 5: Gate-Charge Characteristics
www.goodark.com
0
Page 4 of 7
Rev.1.0
25
SSFM3008L
30V N-Channel MOSFET
Typical Thermal Characteristics
1000
200
Tj(max)=175℃
160
100
10uS
140
Ron limited
Power ( W)
ID,drain current(A)
180
100uS
10
DC
1mS
100
80
60
10mS
1
Ta=25℃
120
40
Tj(max)=175℃ Tc=25℃
20
0.1
0.01
0.1
1
10
0
0.0001
100
0.001
0.01
0.1
1
10
Pulse Width (s)
VDS,drain to source voltage(V)
Figure 7: Maximum Forward Biased Safe
Figure 8: Single Pulse Power Rating
Operating Area
Junction-to-Case
60
Power Dissipation (W)
60
ID,d rain c urren t(A)
50
40
30
20
10
50
40
30
20
10
0
0
0
25
50
75
100
125
150
0
175
25
50
75
TCASE (°C)
ZθJC,Transient Thermal
Resistance( Normalized
)
Figure 9: Power De-rating
125
150
Figure 10: Current De-rating
10
t
Duty cycle D=
0.5,0.3,0.1,0.05,0.01,single
tp
1
0.1
100
TCASE (°C)
D=tp/t
TJ（max）＝PDM*ZθJC*RθJC+TC
RθJC=2.5℃/W
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
Figure 11: Normalized Thermal transient Impedance Curve
www.goodark.com
Page 5 of 7
Rev.1.0
175
SSFM3008L
30V N-Channel MOSFET
Mechanical Data
www.goodark.com
Page 6 of 7
Rev.1.0
SSFM3008L
30V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSFM3008L
Package (Available)
TO252
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package
Type
Units/
Tube
TO-252
80
Tubes/Inner
Box
50
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
www.goodark.com
Units/Inner Inner
Box
Boxes/Carton
Box
4000
10
Duration
Sample Size
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
TJ=125℃ to 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
Page 7 of 7
Units/Carton
Box
40000
Rev.1.0