SSFM2506L
25V N-Channel MOSFET
Main Product Characteristics:
25V
VDSS
SS
2506
SSFFM
M 250
8
SSFM2506L
RDS(on)
6mohm
ID
60A
T O-252 D PAK
M arking and pin
assignm ent
Features and Benefits:
Advanced trench MOSFET process technology
Special designed for PWM, load switching and general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
Description:
It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve
extremely low on resistance, fast switching speed and short reverse recovery time. These features
combine to make this design an extremely efficient and reliable device for use in PWM, load switching
and a wide variety of other applications
Absolute Max Rating:
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
60
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
50
IDM
Pulsed Drain Current②
130
ISM
Pulsed Source Current (Body Diode)②
130
PD @TC = 25°C
Power Dissipation③
50
W
PD @TC =100°C
Power Dissipation③
25
W
VDS
Drain-Source Voltage
25
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.1mH②
90
mJ
IAR
Avalanche Current @ L=0.1mH②
42
A
-55 to + 175
°C
Operating Junction and Storage Temperature
TJ TSTG
Range
Units
A
Thermal Resistance
Symbol
Characterizes
Value
Unit
RθJC
Junction-to-case③
2.8
℃/W
Junction-to-ambient (t ≤ 10s) ④
15
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
41
℃/W
RθJA
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Page 1 of 7
Rev.1.0
SSFM2506L
25V N-Channel MOSFET
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max
Units
BVDSS
Drain-to-Source breakdown
25
—
—
V
—
4.4
6
mΩ
1.2
2.1
2.5
V
—
—
10
voltage
RDS(on)
Static Drain-to-Source
on-resistance
VGS(th)
IDSS
Gate threshold voltage
Drain-to-Source leakage
current
—
VGS = 0V,
ID = 250μA
VGS = 10V,
ID = 30A
VDS = VGS,
ID = 250μA
VDS = 25V,
VGS = 0V
μA
—
Conditions
50
VDS = 25V,
VGS = 0V,
TJ = 55°C
IGSS
Gate-to-Source forward
—
—
-100
—
100
leakage
Gate-to-Source reverse
VGS =20V
nA
leakage
—
VGS = -20V
ID = 30A,
Qg
Total gate charge
—
34.59
40
Qgs
Gate-to-Source charge
—
5.99
8
Qgd
Gate-to-Drain("Miller") charge
—
11.33
15
VGS = 10V
td(on)
Turn-on delay time
—
11.18
—
VGS=10V,
tr
Rise time
—
65.40
—
td(off)
Turn-Off delay time
—
25.20
—
tf
Fall time
—
7.56
—
RGEN=3Ω
Ciss
Input capacitance
—
1903.50
—
VGS = 0V,
Coss
Output capacitance
—
500.30
—
Crss
Reverse transfer capacitance
—
304.50
—
Rg
Gate resistance
—
nC
ns
pF
VDS=12.5V,
RL=0.42Ω,
VDS = 12.5V,
ƒ = 1.0MHz
—
1.4
VDS=12.5V,
Ω
VGS=0V, VDS=0V,
f=1MHz
Source-Drain Ratings and Characteristics
Symbol
Parameter
IS
Maximum Body-Diode
Min.
Continuous Curren
Typ.
Max
Units
60
—
A
Conditions
VSD
Diode Forward Voltage
—
0.5
1
V
IS=1A, VGS=0V
trr
Reverse Recovery Time
—
13.51
—
ns
TJ = 25°C, IF =30A,
Qrr
Reverse Recovery Charge
—
4.8
—
nC
di/dt = 150A/μs
ton
Forward Turn-on Time
Intrinsic turn-on time is negligible
(turn-on is dominated by LS+LD)
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Page 2 of 7
Rev.1.0
SSFM2506L
25V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
100
100
10V
ID,drain current(A)
7V
80
ID,drain current(A)
90
6V
4.5V
60
4V
40
3.5V
20
VDS=5V
80
70
60
50
40
30
20
125℃
10
25℃
0
0
0
1
2
3
4
0
5
0.5
Figure 1: Typical Output Characteristics
Rdson,Drain-to-Source On
Resistance(Normalized)
Rdson,Drain-to-Source On
Resistance
VGS=4.5V
8
7
6
VGS=10V
4
3
0
5
10
15
20
25
1.9
1.8
2.5
3
3.5
4
4.5
5
VGS=10V
1.7
1.6
1.5
1.4
ID=30A
VGS=4.5V
1.3
1.2
1.1
1
ID=20A
0.9
0.8
0
30
25
50
75
100
125
150
175
200
Tj,Junction Temperature(°C)
ID,drain current(A)
Figure 3: On-Resistance vs. Drain Current and
Figure 4: On-Resistance vs. Junction
Gate Voltage
Temperature
1.E+02
IS,source to drain current(A)
30
Rdson,Drain-to-Source On
Resistance(Normalized)
2
Figure 2: Typical Transfer Characteristics
10
5
1.5
VGS,gate to source voltage(V)
VDS,drain to source voltage(V)
9
1
ID=30A
25
20
125℃
15
10
25℃
5
0
2
3
4
5
6
7
8
9
10
1.E+01
125℃
1.E+00
1.E-01
1.E-02
25℃
1.E-03
1.E-04
1.E-05
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VGS,gate to source voltage(V)
VSD,source to drain voltage(V)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
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Page 3 of 7
1.1
Rev.1.0
SSFM2506L
25V N-Channel MOSFET
3000
10
9
2500
8
Capacit ance (pF)
VGS,gate to source voltage(V)
Typical Electrical and Thermal Characteristics
7
6
5
VDS=12.5V
4
ID=30A
3
2
Ciss
2000
1500
VGS=0,F=1MHZ
Ciss=Cgd+Cgs, Cds shorted
1000
Coss=Cds+Cgd
Coss
Crss=Cgd
500
Crss
1
0
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
VDS, drain to source voltage(V)
QG,gate charge(nC)
Figure 7: Gate-Charge Characteristics Figure
8: Capacitance Characteristics
200
1000
ID,drain current(A)
180
Tj(max)=175℃
160
100
10uS
140
Power ( W)
Ron limited
100uS
10
DC
1mS
100
80
60
10mS
1
Ta=25℃
120
40
Tj(max)=175℃ Tc=25℃
20
0.1
0.01
0.1
1
10
0
0.0001
100
0.001
0.01
0.1
1
10
Pulse Width (s)
VDS,drain to source voltage(V)
Figure 9: Maximum Forward Biased Safe
Figure 10: Single Pulse Power Rating
Operating Area(⑤)
Junction-to-Case (⑤)
60
Power Dissipation (W)
60
ID ,drai n cur rent (A)
50
40
30
20
10
50
40
30
20
10
0
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TCASE (°C)
TCASE (°C)
Figure 11: Power De-rating (③)
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0
Figure 12: Current De-rating (③)
Page 4 of 7
Rev.1.0
SSFM2506L
25V N-Channel MOSFET
ZθJC,Transient Thermal
Resistance( Normalized
)
Typical Electrical and Thermal Characteristics
10
t
Duty cycle D=
0.5,0.3,0.1,0.05,0.01,single
tp
1
0.1
D=tp/t
TJ（max）＝PDM*ZθJC*RθJC+TC
RθJC=2.5℃/W
0.01
0.00001 0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
ZθJA,Transient Thermal
Resistance( Normalized
)
Figure 13: Normalized Maximum Transient Thermal Impedance (⑤)
10
Duty cycle D=0.5,0.3,0.1, 0.05,0.01,single
1
t
0.1
tp D=tp/t
TJ（max）＝PDM*ZθJA*RθJA+TA
0.01
RθJA=36℃/W
0.001
0.00001 0.0001 0.001
0.01 0.1
1
Pulse Width (s)
10
100
1000
Figure 14: Normalized Maximum Transient Thermal Impedance (⑥)
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Page 5 of 7
Rev.1.0
SSFM2506L
25V N-Channel MOSFET
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still
air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the device
mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
⑥ The maximum current rating is limited by bond-wires.
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Page 6 of 7
Rev.1.0
SSFM2506L
25V N-Channel MOSFET
Mechanical Data：
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Page 7 of 7
Rev.1.0