GaN POWER with UMS UMS State-of-the-Art Offer UMS launches its first family of state-of-the-art GaN power transistors: • High Power • High Efficiency • Thermally Optimized UMS GaN transistors are available in Flanged Packages. General Purpose Part Number Frequency (GHz) Power (W) CW / Pulse Assoc. Gain (dB@GHz) CW / Pulse PAE @ Freq. (%@GHz) CW / Pulse Bias (A) / (V) Case CHK015A-SMA DC - 6.0 15 10 @ 6 50 @ 6 0.1 / 50 Flange CHK025A-SOA DC - 4.5 30 12 @ 4 55 @ 4 0.2 / 50 Flange CHK040A-SOA DC - 3.5 45 / 55 12/13 @ 3 55/60 @ 3 0.3 / 50 Flange CHK080A-SRA DC - 3.5 90 / 100 12/13 @ 3 55/60 @ 3 0.6 / 50 Flange Flange: screw-down ceramic metal package Internally Matched Part Number Frequency (GHz) Power (W) Pulse Assoc. Gain (dB) Pulse PAE (%) Pulse Bias (A) / (V) Case CHZ050A-SEA 5.2 - 5.9 55 11 40 0.4 / 50 Flange hermetic CHZ050 is tunable over S and C Band Flange hermetic: screw-down 50 ceramic metal package UMS 2012/2013 - Printed on PEFC paper - Smith Corporate : 01 69 59 11 30 www.ums-gaas.com Contact us: UMS SAS - North Europe, Ph: +33 1 69 86 32 00 e-mail: [email protected] UMS GmbH - Germany, Ph: +49 731 505 30 80 e-mail: [email protected] UMS USA, Inc. - America, Ph: +1 978 905 3162 e-mail: [email protected] UMS SAS - South Europe, Ph: +39 0765 480 434 e-mail: [email protected] UMS - Asia, Ph: +86 21 6103 1703 e-mail: [email protected] Worlwide distributor: Richardson RFPD, Inc. – www.richardsonrfpd.com