(Chip Common Mode Filter) Engineering Specification HCM2012G Series Features and Application Powerful components with composite co-fired material to solve EMI problem for high speed differential signal transmission line as USB, and LVDS, without distortion to high speed signal transmission MIPI, MHL serial interface in mobile device. PRODUCT DETAIL Imp.Com. (Ω)±25% @100MHz DCR Max. (Ω) Rated Current Max.(m A) Rated Voltage (V) Insulation Resistance Min.(MΩ) HCM2012GH670AE 67 1.0 200 10 100 HCM2012GH900AE 90 1.0 200 10 100 HCM2012GD900AE 90 1.0 200 10 100 HCM2012GD121AE 120 1.2 100 10 100 HCM2012GS500AE 50 1.0 100 10 100 Part Number ◆ ◆ ◆ ◆ ◆ Test Instruments Agilent E4991A RF IMPEDANCE / MATERIAL ANALYZER HP4338 MILLIOHMMETER Agilent E5071C ENA SERIES NETWORK ANALYZER HP6632B SYSTEM DC POWER SUPPLY Keithley 2410 1100V SOURCE METER PART NUMBER CODE HCM 2012 1 2 G □ 90 0 3 4 5 □ 6 7 E 8 1: Series name 2: Dimensions L*W 3: Material code 4: Product identification number 5: Impedance value 6: Fixed decimal point (ex : 900=90Ω) 7: UN internal code 8: Packaging style P – Embossed paper tape, 7”reel. UN Semiconductor Co., Ltd. www.unsemi.com.tw @ UN Semiconductor Co., Ltd. Revision December 18, 2014 2014 1/7 Specifications are subject to change without notice. (Chip Common Mode Filter) Engineering Specification HCM2012G Series TYPICAL CHARACTERISTIC HCM2012GH670A Fig1. IMPEDANCE vs. FREUQENCY CHARACTERISTICS Fig2. INSERTION LOSS vs. FREUQENCY CHARACTERISTICS HCM2012GH900A Fig3. IMPEDANCE vs. FREUQENCY CHARACTERISTICS Fig4. INSERTION LOSS vs. FREUQENCY CHARACTERISTICS UN Semiconductor Co., Ltd. www.unsemi.com.tw @ UN Semiconductor Co., Ltd. Revision December 18, 2014 2014 2/7 Specifications are subject to change without notice. (Chip Common Mode Filter) Engineering Specification HCM2012G Series HCM2012GD900A Fig5. IMPEDANCE vs. FREUQENCY CHARACTERISTICS Fig6. INSERTION LOSS vs. FREUQENCY CHARACTERISTICS HCM2012GD121A Fig7. IMPEDANCE vs. FREUQENCY CHARACTERISTICS Fig8. INSERTION LOSS vs. FREUQENCY CHARACTERISTICS UN Semiconductor Co., Ltd. www.unsemi.com.tw @ UN Semiconductor Co., Ltd. Revision December 18, 2014 2014 3/7 Specifications are subject to change without notice. (Chip Common Mode Filter) Engineering Specification HCM2012G Series Fig9. IMPEDANCE vs. FREUQENCY CHARACTERISTICS Fig10. INSERTION LOSS vs. FREUQENCY CHARACTERISTICS SHARES AND DIMENSIONS TYPE Dimension L 1.25±0.10 W 1.00±0.10 T 0.50±0.10 P 0.50±0.10 C1 0.30±0.10 C2 0.20±0.15 Unit : mm UN Semiconductor Co., Ltd. www.unsemi.com.tw @ UN Semiconductor Co., Ltd. Revision December 18, 2014 2014 4/7 Specifications are subject to change without notice. (Chip Common Mode Filter) Engineering Specification HCM2012G Series MEASURING CIRCUIT / CIRCUITS CONFIGURATION & LAYOUT PAD TAPE AND REEL SPECIFICATIONS / TAPING DIMENSIONS Type : Paper Carrier Unit : mm UN Semiconductor Co., Ltd. Symbol size symbol size W 8.00±0.10 Po 4.00±0.10 P1 4.00±0.10 P2 2.00±0.10 E 1.75±0.10 Bo 2.30±0.10 F 3.50±0.10 Ao 1.40±0.10 Do 1.55±0.05 Ko 1.13±0.10 D1 1.00±0.05 t 0.22±0.05 www.unsemi.com.tw @ UN Semiconductor Co., Ltd. Revision December 18, 2014 2014 5/7 Specifications are subject to change without notice. (Chip Common Mode Filter) Engineering Specification HCM2012G Series REEL DIMENSIONS STANDARD QUANTITY FOR PACKAGING Packaging style : Taping Reel packaging quantity : 3000 pcs/reel Inner box : 5 reel/inner box RECOMMENDED SOLDERING CONDITIONS GENERAL TECHNICAL DATA Opertation temperatur range : -40℃ ~ +85℃ Storage Condition : Less than 40℃ and 70% RH Storage Time: 6 months Max. Soldering method: Reflow or Wave Soldering UN Semiconductor Co., Ltd. www.unsemi.com.tw @ UN Semiconductor Co., Ltd. Revision December 18, 2014 2014 6/7 Specifications are subject to change without notice. (Chip Common Mode Filter) Engineering Specification HCM2012G Series RELIABILITY AND TEST CONDITION Test item Test condition A. Temperature : -40 ~ +85℃ B. Cycle : 100 cycles C. Dwell time : 30minutes Temperature Cycle Measurement : at ambient temperature 24 hrs after test completion Criteria A. No mechanical damage B.Impedance value should be within ± 20 % of the initial value Operational Life A. Temperature : 85℃ ± 5℃ B. Test time : 1000 hrs C. Apply current : full rated current Measurement : at ambient temperature 24 hrs after test completion A. No mechanical damage B.Impedance value should be within ± 20 % of the initial value A. No mechanical damage B. Impedance value should be within ± 20 % of the initial value Biased Humidity A. Temperature : 40 ± 2℃ B. Humidity : 90 ~ 95 % RH C. Test time : 1000 hrs D. Apply current : full rated current Measurement : at ambient temperature 24 hrs after test completion A. Solder temperature : 260 ± 5℃ B. Flux : Rosin C. DIP time : 10 ± 1 sec A. More than 95 % of terminal electrode should be covered with new solder B. No mechanical damage C.Impedance value should be within ± 20 % of the initial value A. Temperature : 93 ± 2℃ B. Test time : 4 hrs More than 95 % of terminal electrode should be covered with new solder Resistance to Solder Heat Steam Aging Test C. Solder temperature : 235 ± 5℃ D. Flux : Rosin E. DIP time : 5 ± 1 sec 13.NOTE All the products in this specification comply with RoHS 1.0 directive. UN Semiconductor Co., Ltd. www.unsemi.com.tw @ UN Semiconductor Co., Ltd. Revision December 18, 2014 2014 7/7 Specifications are subject to change without notice.