(Chip Common Mode Filter Plus ESD function) Engineering Specification HCM1012GH900BP Features and Application Powerful components with composite co-fired material to solve EMI problem for high speed differential signal transmission line as USB , and LVDS , without distortion to high speed signal transmission Common mode filter plus ESD function MIPI, MHL serial interface in mobile device PRODUCT DETAIL Part Number Imp.Com. (Ω)±25% @100MHz DCR Max. (Ω) Rated Current Max.(m A) Rated Voltage (V) Insulation Resistance Min.(MΩ) Capacitance @0.5V 1MHz Max(p F) Current@5V 90 2.0 100 10 100 1.3 1 HCM1012GH900BP Test Instruments ◆ ◆ ◆ ◆ ◆ ◆ Leakage Max(µA) Agilent E4991A RF IMPEDANCE / MATERIAL ANALYZER HP4338 MILLIOHMMETER Agilent E5071C ENA SERIES NETWORK ANALYZER Keithley 2410 1100V SOURCE METER HP6632B SYS TEM DC POWER SUPPLY Meet IEC61000-4-2 level 4: contact Discharge 8KV / Air Discharge 15KV PART NUMBER CODE HCM 1012 1 2 G □ 90 0 3 4 5 □ 6 7 P 8 1: Series name 2: Dimensions L*W 3: Material code 4: Product identification number 5: Impedance value 6: Fixed decimal point (ex : 900=90Ω) 7: UN internal code 8: Packaging style P – Embossed paper tape, 7”reel. UN Semiconductor Co., Ltd. Revision December 18, 2014 www.unsemi.com.tw 1/6 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. (Chip Common Mode Filter Plus ESD function) Engineering Specification HCM1012GH900BP TYPICAL CHARACTERISTIC Fig1. IMPEDANCE vs. FREUQENCY CHARACTERISTICS Fig2. INSERTION LOSS vs. FREUQENCY CHARACTERISTICS 1000 0 Insertion loss (dB) Impedance (ohm) Differential Mode Common Mode 100 Differential Mode 10 -5 -10 -15 -20 Common Mode 1 -25 10 100 1,000 10,000 10 100 1,000 10,000 Frequency (MHz) Frequency (MHz) Eye pattern USB 2.0 high speed ESD Wave forms IEC 8KV_ESD Contact 1,000 Without Device With CMF+ESD 900 800 V o lta g e (V ) 700 600 500 400 300 200 100 -30 0 30 60 90 120 150 180 210 240 270 Time(ns) UN Semiconductor Co., Ltd. Revision December 18, 2014 www.unsemi.com.tw 2/6 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. 300 (Chip Common Mode Filter Plus ESD function) Engineering Specification HCM1012GH900BP SHARES AND DIMENSIONS TYPE L W T P C1 C2 G1 G2 Dimension 1.25±0.10 1.00±0.10 0.60±0.10 0.50±0.10 0.30±0.10 0.20±0.15 0.30±0.15 0.20±0.15 Unit : mm CIRCUIT CONFIGURATION & LAYOUT PAD TAPE AND REEL SPECIFICATIONS / TAPING DIMENSIONS Type : Paper Carrier Unit : mm UN Semiconductor Co., Ltd. Revision December 18, 2014 Symbol size symbol size C 8.00±0.10 H 4.00±0.10 D 3.50±0.05 J 1.55±0.05 E 1.75±0.05 T 2.00±0.05 F 4.00±0.10 A 1.55±0.05 G 2.00±0.05 B 0.60±0.03 www.unsemi.com.tw 3/6 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. (Chip Common Mode Filter Plus ESD function) Engineering Specification HCM1012GH900BP REEL DIMENSIONS STANDARD QUANTITY FOR PACKAGING Packaging style : Taping Reel packaging quantity : 4000 pcs/reel Inner box : 5 reel/inner box UN Semiconductor Co., Ltd. Revision December 18, 2014 www.unsemi.com.tw 4/6 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. (Chip Common Mode Filter Plus ESD function) Engineering Specification HCM1012GH900BP RECOMMENDED SOLDERING CONDITIONS GENERAL TECHNICAL DATA Opertation temperatur range : -40℃ ~ +85℃ Storage Condition : Less than 40℃ and 70% RH Storage Time: 6 months Max. Soldering method: Reflow or Wave Soldering RELIABILITY AND TEST CONDITION Test item Test condition A. Temperature : -40 ~ +85℃ B. Cycle : 100 cycles C. Dwell time : 30minutes Temperature Cycle Measurement : at ambient temperature 24 hrs after test completion Operational Life A. Temperature : 85℃ ± 5℃ B. Test time : 1000 hrs C. Apply current : full rated current Measurement : at ambient temperature 24 hrs after test completion UN Semiconductor Co., Ltd. Revision December 18, 2014 Criteria A. No mechanical damage B. Impedance value should be within ± 20 % of the initial value A. No mechanical damage B. Impedance value should be within ± 20 % of the initial value www.unsemi.com.tw 5/6 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. (Chip Common Mode Filter Plus ESD function) Engineering Specification HCM1012GH900BP Test item Biased Humidity Resistance to Solder Heat Steam Aging Test ESD test (contact discharge) ESD test (air discharge) Test condition A. Temperature : 40 ± 2℃ B. Humidity : 90 ~ 95 % RH C. Test time : 1000 hrs D. Apply current : full rated current Measurement : at ambient temperature 24 hrs after test completion Criteria A. No mechanical damage B. Impedance value should be within ± 20 % of the initial value A. Solder temperature : 260 ± 5℃ B. Flux : Rosin C. DIP time : 10 ± 1 sec A. More than 95 % of terminal electrode should be covered with new solder B. No mechanical damage C. Impedance value should be within ± 20 % of the initial value A. Temperature : 93 ± 2℃ B. Test time : 4 hrs More than 95 % of terminal electrode should be covered with new solder C. Solder temperature : 235 ± 5℃ D. Flux : Rosin E. DIP time : 5 ± 1 sec A. Voltage：8kV(level 4) A. No mechanical damage B. Polarity：+, B. Leakage current：within 10μA C. ESD gun：IEC61000-4-2 standard Measurement : at ambient temperature 24 hrs after test completion A. Voltage：15kV(level 4) A. No mechanical damage B. Polarity：+, B. Leakage current：within 10μA C. ESD gun：IEC61000-4-2 standard Measurement : at ambient temperature 24 hrs after test completion 12.NOTE All the products in this specification comply with RoHS 1.0 directive. UN Semiconductor Co., Ltd. Revision December 18, 2014 www.unsemi.com.tw 6/6 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.