LOW PROFILE TYPE (Chip Common Mode Filter) Engineering Specification HCM1012G Series Features and Application Powerful components with composite co-fired material to solve EMI problem for high speed differential signal transmission line as USB, and LVDS, without distortion to high speed signal transmission MIPI, MHL serial interface in mobile device. PRODUCT DETAIL Imp.Com. (Ω)±25% @100MHz DCR Max. (Ω) Rated Current Max.(m A) Rated Voltage (V) Insulation Resistance Min.(MΩ) HCM1012GH900A05P 90 1.0 100 10 100 HCM1012GD900A05P 90 1.5 100 10 100 HCM1012GD670A05P 67 1.5 100 10 100 HCM1012GD900B05P 90 3.0 100 10 100 Part Number ◆ ◆ ◆ ◆ Test Instruments Agilent E4991A RF IMPEDANCE / MATERIAL ANALYZER HP4338 MILLIOHMMETER Agilent E5071C ENA SERIES NETWORK ANALYZER Keithley 2410 1100V SOURCE METER PART NUMBER CODE HCM 1012 1 2 G □ 90 0 3 4 5 □ 6 7 05 P 8 9 1: Series name 2: Dimensions L*W 3: Material code 4: Product identification number 5: Impedance value 6: Fixed decimal point (ex : 900=90Ω) 7: UN internal code 8: Dimension T (ex : 05=0.50mm) 9: Packaging style P – Embossed paper tape, 7”reel. UN Semiconductor Co., Ltd. www.unsemi.com.tw @ UN Semiconductor Co., Ltd. Revision December 18, 2014 2014 1/6 Specifications are subject to change without notice. LOW PROFILE TYPE (Chip Common Mode Filter) Engineering Specification HCM1012G Series TYPICAL CHARACTERISTIC HCM1012GH900A05 Fig1. IMPEDANCE vs. FREUQENCY CHARACTERISTICS Fig2. INSERTION LOSS vs. FREUQENCY CHARACTERISTICS HCM1012GD900A05 Fig3. IMPEDANCE vs. FREUQENCY CHARACTERISTICS Fig4. INSERTION LOSS vs. FREUQENCY CHARACTERISTICS UN Semiconductor Co., Ltd. www.unsemi.com.tw @ UN Semiconductor Co., Ltd. Revision December 18, 2014 2014 2/6 Specifications are subject to change without notice. LOW PROFILE TYPE (Chip Common Mode Filter) Engineering Specification HCM1012G Series HCM1012GD670A05 Fig5. IMPEDANCE vs. FREUQENCY CHARACTERISTICS Fig6. INSERTION LOSS vs. FREUQENCY CHARACTERISTICS HCM1012GD900B05 Fig7. IMPEDANCE vs. FREUQENCY CHARACTERISTICS Fig8. INSERTION LOSS vs. FREUQENCY CHARACTERISTICS UN Semiconductor Co., Ltd. www.unsemi.com.tw @ UN Semiconductor Co., Ltd. Revision December 18, 2014 2014 3/6 Specifications are subject to change without notice. LOW PROFILE TYPE (Chip Common Mode Filter) Engineering Specification HCM1012G Series SHARES AND DIMENSIONS TYPE Dimension L 1.25±0.10 W 1.00±0.10 T 0.50±0.10 P 0.50±0.10 C1 0.30±0.10 C2 0.20±0.15 Unit : mm CIRCUIT CONFIGURATION & LAYOUT PAD TAPE AND REEL SPECIFICATIONS / TAPING DIMENSIONS Type : Paper Carrier Unit : mm UN Semiconductor Co., Ltd. Symbol size symbol size A 1.20±0.05 Po 4.00±0.10 B 1.45±0.05 P1 4.00±0.10 W 8.00±0.10 P2 2.00±0.05 E 1.75±0.05 Do 1.55±0.05 F 3.50±0.05 T 0.60±0.03 www.unsemi.com.tw @ UN Semiconductor Co., Ltd. Revision December 18, 2014 2014 4/6 Specifications are subject to change without notice. LOW PROFILE TYPE (Chip Common Mode Filter) Engineering Specification HCM1012G Series REEL DIMENSIONS STANDARD QUANTITY FOR PACKAGING Packaging style : Taping Reel packaging quantity : 4000 pcs/reel Inner box : 5 reel/inner box RECOMMENDED SOLDERING CONDITIONS GENERAL TECHNICAL DATA Opertation temperatur range : -40℃ ~ +85℃ Storage Condition : Less than 40℃ and 70% RH Storage Time: 6 months Max. Soldering method: Reflow or Wave Soldering UN Semiconductor Co., Ltd. www.unsemi.com.tw @ UN Semiconductor Co., Ltd. Revision December 18, 2014 2014 5/6 Specifications are subject to change without notice. LOW PROFILE TYPE (Chip Common Mode Filter) Engineering Specification HCM1012G Series RELIABILITY AND TEST CONDITION Test item Test condition A. Temperature : -40 ~ +85℃ B. Cycle : 100 cycles C. Dwell time : 30minutes Temperature Cycle Measurement : at ambient temperature 24 hrs after test completion Operational Life Biased Humidity Resistance to Solder Heat Steam Aging Test A. Temperature : 85℃ ± 5℃ B. Test time : 1000 hrs C. Apply current : full rated current Criteria A. No mechanical damage B.Impedance value should be within ± 20 % of the initial value A. No mechanical damage B.Impedance value should be within ± 20 % of the initial value Measurement : at ambient temperature 24 hrs after test completion A. Temperature : 40 ± 2℃ B. Humidity : 90 ~ 95 % RH C. Test time : 1000 hrs D. Apply current : full rated current Measurement : at ambient temperature 24 hrs after test completion A. No mechanical damage B. Impedance value should be within ± 20 % of the initial value A. Solder temperature : 260 ± 5℃ B. Flux : Rosin C. DIP time : 10 ± 1 sec A. More than 95 % of terminal electrode should be covered with new solder B. No mechanical damage C.Impedance value should be within ± 20 % of the initial value A. Temperature : 93 ± 2℃ B. Test time : 4 hrs More than 95 % of terminal electrode should be covered with new solder C. Solder temperature : 235 ± 5℃ D. Flux : Rosin E. DIP time : 5 ± 1 sec UN Semiconductor Co., Ltd. www.unsemi.com.tw @ UN Semiconductor Co., Ltd. Revision December 18, 2014 2014 6/6 Specifications are subject to change without notice.