SMG2326N

SMG2326N
2.2 A, 20 V, RDS(ON) 70 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SC-59
These miniature surface mount MOSFETs utilize High
Cell Density process. Low RDS(on) assures minimal power
loss and conserves energy, making this device ideal for use
in power management circuitry.
A
L
3
3
C B
Top View
1
FEATURES


1
K
Low RDS(on) provides higher efficiency and extends
battery life.
Miniature SC-59 surface mount Package saves
board space.
2
E
2
D
F
Application
G
REF.
DC-DC converters, power management in portable
and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
PACKAGE INFORMATION
Package
MPQ
LeaderSize
SC-59
3K
7’ inch



ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±8
V
TA=25°C
Continuous Drain Current 1
TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction)
Power Dissipation 1
1
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
ID
2.2
1.8
A
IDM
8
A
IS
0.6
A
PD
TJ, TSTG
1.25
0.8
-55 ~ 150
W
°C
Thermal Resistance Ratings
Maximum Junction to Ambient 1
t≦5 sec
Steady-State
RθJA
100
166
°C/W
Notes:
1.
Surface Mounted on 1” x 1” FR4 Board.
2.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
14-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
SMG2326N
2.2 A, 20 V, RDS(ON) 70 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Static
VGS(th)
0.7
-
-
V
VDS=VGS, ID=250μA
Gate-Body Leakage
IGSS
-
-
1
μA
VDS=0, VGS=12V
Zero Gate Voltage Drain Current
IDSS
-
-
0.1
-
-
1
5
-
-
-
-
70
-
-
80
-
-
120
Gate-Threshold Voltage
On-State Drain Current A
Drain-Source On-Resistance
ID(ON)
A
RDS(ON)
μA
A
VDS=16V, VGS=0
VDS=16V, VGS=0, TJ=55°C
VDS=5V, VGS=4.5V
VGS=4.5V, ID=2.2A
mΩ
VGS=2.5V, ID=2A
VGS=1.8V, ID=1.8A
Forward Transconductance A
gFS
-
11
-
S
VDS=5V,,ID=2A
Diode Forward Voltage
VSD
-
0.6
-
V
IS=0.6A, VGS=0
Dynamic
2
-
4.5
Total Gate Charge
Qg
-
Gate-Source Charge
Qgs
-
0.89
-
Gate-Drain Charge
Qgd
-
0.95
-
Turn-On Delay Time
Td(ON)
-
6
-
Tr
-
6.5
-
Td(OFF)
-
14
-
Tf
-
2
-
Rise Time
Turn-Off Delay Time
Fall Time
nC
ID=2A
VDS=10V
VGS=4.5V
nS
ID=1A, VDD=10V
VGS=4.5V
RG=6Ω
Notes:
1.
Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
14-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2