SMG2330N

SMG2330N
5.2A, 30V, RDS(ON) 32mΩ
Ω
N-Channel Enhancement MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SC-59
DESCRIPTION
These miniature surface mount MOSFETs utilize High
Cell Density process. Low RDS(on) assures minimal power
loss and conserves energy, making this device ideal for
use in power management circuitry. Typical applications are
PWMDC-DC converters, power management in portable
and battery-powered products such as computers, printers,
battery charger, telecommunication power system, and
telephones power system.
A
L
3
3
C B
Top View
1
1
2
K
E
2
D
FEATURES
F
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT-23 Surface Mount Package Saves Board Space
High power and current handling capability
Low side high current DC-DC Converter applications
H
G
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
PACKAGE INFORMATION
Package
MPQ
Leader Size
SC-59
3K
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
30
V
Continuous Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
TA=25°C
1
5.2
TA=70°C
Pulsed Drain Currentb
2
Continuous Source Current (Diode Conduction)
Power Dissipationa
A
ID
1
4.1
IDM
30
A
IS
1.6
A
TA=25°C
1
1.3
PD
TA=70°C
Junction and Storage Temperature Range
W
0.8
TJ, Tstg
-55~150
°C
100
°C / W
166
°C / W
Thermal Resistance Rating
1
t≦5 sec
Maximum Junction to Ambient
RθJA
Steady-State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature
http://www.SeCoSGmbH.com/
4-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
SMG2330N
5.2A, 30V, RDS(ON) 32mΩ
Ω
N-Channel Enhancement MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Typ.
Max.
Unit
20
-
-
A
-
-
1
Min.
Teat Conditions
Static
On-State Drain Current
1
ID(on)
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
1
Drain-Source On Resistance
Forward Transconductance
Diode Forward Voltage
1
IDSS
µA
VDS=5V, VGS=10V
VDS=24V , VGS=0
-
-
25
IGSS
-
-
±100
nA
VGS=20V, VDS=0
VGS(th)
1
-
-
V
VDS=VGS, ID=250µA
-
-
32
RDS(ON)
VDS= 24V, VGS=0, TJ=55°C
mΩ
VGS=10V, ID=5.2A
-
-
64
gFS
-
40
-
S
VDS=15V,,ID=5.2A
VSD
-
0.7
-
V
IS=2.3 A, VGS=0
Dynamic
VGS=4.5V, ID=3.7A
2
Total Gate Charge
Qg
-
4.0
-
Gate-Source Charge
Qgs
-
1.1
-
Gate-Drain Charge
Qgd
-
1.4
-
Turn-On Delay Time
Td(ON)
-
16
-
Turn-Off Delay Time
Td(OFF)
-
23
-
Rise Time
Tr
-
5
-
Fall-Time
Tf
-
3
-
nC
VDS=15V,
VGS=4.5V,
ID=5.2A
nS
VDD=25V,
RL=25Ω ,
ID=1A,
VGEN=10V
Notes:
1. Pulse test: PW <= 300us duty cycle <= 2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
4-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2