SMG2319P -2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. A L 3 3 C B Top View 1 1 K FEATURES 2 Low RDS(on) provides higher efficiency and extends battery life. Fast Switch. Low Gate Charge. Miniature SC-59 Surface Mount Package Saves Board Space. E 2 D G H Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. F REF. A B C D E F APPLICATION Voltage control small signal switch, power management in portable and battery-powered products such as computer portable electronics and other battery power application. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 1 PACKAGE INFORMATION 3 Package MPQ Leader Size SC-59 3K 7’ inch 2 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Symbol Ratings Unit VDS -30 V ±20 V VGS TA=25°C TA=70°C ID -2.1 -1.7 A Pulsed Drain Current 2 IDM ±10 A Continuous Source Current (Diode Conduction) 1 IS -0.4 A Power Dissipation 1 TA=25°C TA=70°C Operating Junction and Storage Temperature Range PD TJ, TSTG 1.25 0.8 -55 ~ 150 W °C Thermal Resistance Data Maximum Junction to Ambient 1 t≦5 sec Steady-State RθJA 250 285 °C/W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 12-Apr-2011 Rev. B Any changes of specification will not be informed individually. Page 1 of 5 SMG2319P -2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. - - -1 - - -10 Unit Test Conditions Static μA VDS = -24V, VGS=0 Zero Gate Voltage Drain Current IDSS Gate-Body Leakage IGSS - - ±100 nA VDS =0, VGS= ±20V Gate-Threshold Voltage VGS(th) -1.3 - - V VDS =VGS, ID = -250μA On-State Drain Current 1 ID(ON) -3 - - A VDS = -5V, VGS= -4.5V - - 200 - - 300 Drain-Source On-Resistance 1 RDS(ON) mΩ VDS = -24V, VGS=0, TJ=55°C VGS= -10V, ID = -2.1A VGS= -4.5V, ID = -1.7A Forward Transconductance 1 gFS - 2 - S VDS= -5V,,ID = -2.1A Diode Forward Voltage VSD - -0.7 -1.2 V IS= -0.4A, VGS=0 Dynamic 2 Total Gate Charge Qg - 3.4 - Gate-Source Charge Qgs - 0.8 - Gate-Drain Charge Qgd - 1.5 - Turn-On Delay Time Td(ON) - 8 - Tr - 18 - Td(OFF) - 52 - Tf - 39 - Rise Time Turn-Off Delay Time Fall Time nC ID= -2.1A VDS= -10V VGS= -5V nS VDS= -10V VGEN= -10V RG=50Ω ID= -1.1A Notes: 1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 12-Apr-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 5 SMG2319P Elektronische Bauelemente -2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 12-Apr-2011 Rev. B Any changes of specification will not be informed individually. Page 3 of 5 SMG2319P Elektronische Bauelemente -2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 12-Apr-2011 Rev. B Any changes of specification will not be informed individually. Page 4 of 5 SMG2319P Elektronische Bauelemente -2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 12-Apr-2011 Rev. B Any changes of specification will not be informed individually. Page 5 of 5