STT3458N 3.4A , 60V , RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. A E 6 5 L 4 B FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low gate charge Fast switch Miniature TSOP-6 surface mount package saves board space F 1 2 3 C REF. A B C D E F Power switch, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION J K DG APPLICATION H Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. D D Package MPQ Leader Size D D TSOP-6 3K 7 inch G S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V TA= 25°C Continuous Drain Current 1 TA= 70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 TA= 25°C Power Dissipation 1 TA= 70°C Operating Junction and Storage Temperature Range ID 3.4 2.7 A IDM ±15 A IS 1.7 A PD TJ, TSTG 2 1.3 -55 ~ 150 W °C Thermal Resistance Ratings Maximum Junction to Ambient 1 t≦5 sec Steady State RθJA 62.5 110 °C / W Notes 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 05-Mar-2012 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 STT3458N 3.4A , 60V , RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit VGS(th) 1 - - V VDS=VGS, ID=250μA Gate-Body Leakage IGSS - - ±100 nA VDS=0, VGS= ±20V Zero Gate Voltage Drain Current IDSS - - 1 - - 50 10 - - - - 92 - - 107 gfs - 8 - S VDS=4.5V, ID=3.4A VSD - 1.1 - V IS=1.7A, VGS=0 Gate-Threshold Voltage On-State Drain Current 1 ID(on) Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 RDS(ON) Dynamic Qg - 3.6 - Gate-Source Charge Qgs - 1.8 - Gate-Drain Charge Qgd - 1.3 - Turn-on Delay Time Td(on) - 10 - Tr - 10 - Td(off) - 20 - Tf - 10 - Turn-off Delay Time Fall Time A VDS=48V, VGS=0 VDS=48V, VGS=0, TJ= 55°C VDS =5V, VGS=10V mΩ VGS=10V, ID=3.4A VGS=4.5V, ID=3.1A 2 Total Gate Charge Rise Time μA Test Conditions nC VDS=30V, VGS=5V, ID=3.4A nS VDD=30V, VGEN=10V, RL=30Ω, ID=1A Notes 1. Pulse test：PW≦300μs duty cycle≦2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 05-Mar-2012 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 STT3458N Elektronische Bauelemente 3.4A , 60V , RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 05-Mar-2012 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 STT3458N Elektronische Bauelemente 3.4A , 60V , RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 05-Mar-2012 Rev. B Any changes of specification will not be informed individually. Page 4 of 4